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2 Jun 2003

Volume 82, Issue 22, pp. 3811-3991

Issue Cover Spotlight Figure

Appl. Phys. Lett. 82, 3958 (2003); http://dx.doi.org/10.1063/1.1579125 (3 pages)

E. Zussman, D. Rittel, and A. L. Yarin
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Single-component light-emitting electrochemical cell with improved stability

L. Edman, M. Pauchard, B. Liu, G. Bazan, D. Moses, and A. J. Heeger

Appl. Phys. Lett. 82, 3961 (2003); http://dx.doi.org/10.1063/1.1577387 (3 pages) | Cited 40 times

Online Publication Date: 27 May 2003

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We report a single-component polymeric light-emitting electrochemical cell with poly[9,9′-bis[6″-(N,N,N-trimethylammonium)hexyl]fluorene-alt-co-phenylene]bromide (PFN+Br−) as the active material. Indium tin oxide/PFN+Br−/aluminum sandwich structures demonstrate a low and thickness-independent turn-on voltage (2.9 V) for blue light emission. Thermophysical characterization shows that PFN+Br− is in a metastable amorphous phase after spin casting, but that crystallization takes place at elevated temperatures. With this information at hand, we allowed devices to turn-on via ionic redistribution (and the formation of a p–i–n junction) in the amorphous phase, and then stabilized this desired configuration through crystallization. We find significantly improved lifetimes and relatively fast turn-on times for these single-component devices operating at room temperature. © 2003 American Institute of Physics.
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85.60.Jb Light-emitting devices
42.70.Jk Polymers and organics
82.47.-a Applied electrochemistry
82.45.Wx Polymers and organic materials in electrochemistry

Pentacene-based radio-frequency identification circuitry

P. F. Baude, D. A. Ender, M. A. Haase, T. W. Kelley, D. V. Muyres, and S. D. Theiss

Appl. Phys. Lett. 82, 3964 (2003); http://dx.doi.org/10.1063/1.1579554 (3 pages) | Cited 330 times

Online Publication Date: 27 May 2003

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Pentacene-based thin-film integrated circuits patterned only with polymeric shadow masks and powered by near-field coupling at radio frequencies of 125 kHz and above 6 MHz have been demonstrated. Sufficient amplitude modulation of the rf field was obtained to externally detect a clock signal generated by the integrated circuit. The circuits operate without the use of a diode rectification stage. This demonstration provides the basis for more sophisticated low-cost rf transponder circuitry using organic semiconductors. © 2003 American Institute of Physics.
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85.30.Tv Field effect devices

Bottom-contact organic field-effect transistors having low-dielectric layer under source and drain electrodes

Jianfeng Yuan, Jian Zhang, Jun Wang, Xuanjun Yan, Donghang Yan, and Wu Xu

Appl. Phys. Lett. 82, 3967 (2003); http://dx.doi.org/10.1063/1.1580646 (3 pages) | Cited 35 times

Online Publication Date: 27 May 2003

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An organic thin-film transistor (OTFT) having a low-dielectric polymer layer between gate insulator and source/drain electrodes is investigated. Copper phthalocyanine (CuPc), a well-known organic semiconductor, is used as an active layer to test performance of the device. Compared with bottom-contact devices, leakage current is reduced by roughly one order of magnitude, and on-state current is enhanced by almost one order of magnitude. The performance of the device is almost the same as that of a top-contact device. The low-dielectric polymer may play two roles to improve OTFT performance. One is that this structure influences electric-field distribution between source/drain electrodes and semiconductor and enhances charge injection. The other is that the polymer influences growth behavior of CuPc thin films and enhances physical connection between source/drain electrodes and semiconductor channel. Advantages of the OTFT having bottom-contact structure make it useful for integrated plastic electronic devices. © 2003 American Institute of Physics.
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85.30.Tv Field effect devices

A superconducting antenna-coupled hot-spot microbolometer

A. Luukanen and J. P. Pekola

Appl. Phys. Lett. 82, 3970 (2003); http://dx.doi.org/10.1063/1.1579562 (3 pages) | Cited 27 times

Online Publication Date: 27 May 2003

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We report the electrical properties of an antenna-coupled niobium vacuum-bridge bolometer, operated at a temperature of 4.2 K, in which the thermal isolation is maximized by the vacuum gap between the bridge and the underlying silicon substrate. The device is voltage-biased, which results in a formation of a normal state region in the middle of the bridge. The device shows a current responsivity of −1430 A/W and an amplifier limited electrical noise equivalent power of 1.4×10−14 W/math. © 2003 American Institute of Physics.
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85.25.Pb Superconducting infrared, submillimeter and millimeter wave detectors
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors

Spectral responsivity and quantum efficiency of n-ZnO/p-Si photodiode fully isolated by ion-beam treatment

C. H. Park, I. S. Jeong, J. H. Kim, and Seongil Im

Appl. Phys. Lett. 82, 3973 (2003); http://dx.doi.org/10.1063/1.1579553 (3 pages) | Cited 22 times

Online Publication Date: 27 May 2003

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We report on the fabrication of a heterojunction photodiode for the visible range that consists of a transparent insulating ZnO overlayer and a transparent semiconducting n-ZnO layer on p-Si. For device isolation, we implanted Si+ ions into the n-ZnO layer. We have obtained a wide-range spectral responsivity curve for our isolated photodiodes, which showed a maximum quantum efficiency of 70% at 650 nm and a minimum of 10% at 420 nm. However, they exhibited an efficiency drop at 380 nm in the near-ultraviolet because the ZnO layers absorbed the photons of higher energy before they reached p-Si. The ion-beam-induced isolation considerably reduced dark leakage currents in our devices when the dose of Si ions was as high as 5×1015 cm−2. © 2003 American Institute of Physics.
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85.60.Dw Photodiodes; phototransistors; photoresistors
72.40.+w Photoconduction and photovoltaic effects
61.80.Jh Ion radiation effects
61.82.Fk Semiconductors

Mechanism of the reverse gate leakage in AlGaN/GaN high electron mobility transistors

Shreepad Karmalkar, D. Mahaveer Sathaiya, and M. S. Shur

Appl. Phys. Lett. 82, 3976 (2003); http://dx.doi.org/10.1063/1.1579852 (3 pages) | Cited 41 times

Online Publication Date: 27 May 2003

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The off-state gate current in AlGaN/GaN high electron mobility transistors is shown to arise from two parallel gate to substrate tunneling paths: a direct path, and a path via deep traps, which are distributed throughout the AlGaN layer and spread over an energy band. A model to calculate this current is given, which shows that trap-assisted tunneling dominates below T ∼ 500 K, and direct tunneling (thermionic field emission) dominates at higher temperatures. A model fit to experimental results yields the following fabrication process sensitive parameters: trap concentration of ∼ 1013–1015 cm−3, and trap bandwidth of ∼50%–70% of the barrier height located 0.4–0.55 V below the conduction band edge. © 2003 American Institute of Physics.
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85.30.Tv Field effect devices
73.40.Gk Tunneling
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths

Polymeric amorphous carbon as p-type window within amorphous silicon solar cells

R. U. A. Khan, S. R. P. Silva, and R. A. C. M. M. van Swaaij

Appl. Phys. Lett. 82, 3979 (2003); http://dx.doi.org/10.1063/1.1580636 (3 pages) | Cited 5 times

Online Publication Date: 27 May 2003

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Amorphous carbon (a-C) has been shown to be intrinsically p-type, and polymeric a-C (PAC) possesses a wide Tauc band gap of 2.6 eV. We have replaced the p-type amorphous silicon carbide layer of a standard amorphous silicon solar cell with an intrinsic ultrathin layer of PAC. The thickness of the p layer had to be reduced from 9 to 2.5 nm in order to ensure sufficient conduction through the PAC film. Although the resulting external parameters suggest a decrease in the device efficiency from 9.2% to 3.8% due to a reduced value of open-circuit voltage, the spectral response shows an improvement in the 400–500-nm wavelength range, as a consequence of the wider band gap of the PAC layer. © 2003 American Institute of Physics.
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84.60.Jt Photoelectric conversion
42.79.Ci Filters, zone plates, and polarizers
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