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2 Jun 2003

Volume 82, Issue 22, pp. 3811-3991

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Appl. Phys. Lett. 82, 3958 (2003); http://dx.doi.org/10.1063/1.1579125 (3 pages)

E. Zussman, D. Rittel, and A. L. Yarin
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Al2O3/Si3N4 stacked insulators for 0.1 μm gate metal–oxide–semiconductor transistors realized by high-density Si3N4 buffer layers

Yoshihisa Fujisaki, Kunie Iseki, Hiroshi Ishiwara, Ming Mao, and Randhir Bubber

Appl. Phys. Lett. 82, 3931 (2003); http://dx.doi.org/10.1063/1.1579850 (3 pages) | Cited 7 times

Online Publication Date: 27 May 2003

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We developed Al2O3/Si3N4 stacked insulators suitable for the advanced metal–oxide–semiconductor (MOS) devices. Ultrathin Si3N4 was prepared by direct nitridation of Si substrate using atomic nitrogen radicals. With this process, the film obtained was less defective compared to conventional Si3N4. Al2O3 was then deposited by atomic layer deposition on Si3N4 and oxidized to eliminate defects in the film. Since the buffer Si3N4 does not contain a large amount of hydrogen, we could perform high-temperature oxidation without any additional interfacial layer formation in the Si substrate. We achieved high capacitance density and low leakage current that are acceptable for the gate insulator in advanced MOS devices with a 0.1 μm gate length by exploiting this buffering technique. © 2003 American Institute of Physics.
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85.30.Tv Field effect devices
73.61.Ng Insulators
81.65.Lp Surface hardening: nitridation, carburization, carbonitridation
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.65.Mq Oxidation

Nanodomain engineering in RbTiOPO4 ferroelectric crystals

G. Rosenman, P. Urenski, A. Agronin, A. Arie, and Y. Rosenwaks

Appl. Phys. Lett. 82, 3934 (2003); http://dx.doi.org/10.1063/1.1578693 (3 pages) | Cited 13 times

Online Publication Date: 27 May 2003

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A high voltage atomic force microscope has been applied for tailoring strip-like nanodomains in RbTiOPO4 ferroelectric crystal. Highly anisotropic nanodomain propagation has been observed owing to the difference in lattice constants along the principal axes of the RbTiOPO4 crystal. Studying the influence of the applied high voltage, and tip velocity on the domain strips has allowed us to fabricate fine nanodomain gratings, which is useful for backward-propagating quasi-phase-matched frequency conversion. © 2003 American Institute of Physics.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.Dj Domain structure; hysteresis
42.70.Mp Nonlinear optical crystals
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.79.Dj Gratings

Effects of scaling the film thickness on the ferroelectric properties of SrBi2Ta2O9 ultra thin films

J. Celinska, V. Joshi, S. Narayan, L. McMillan, and C. Paz de Araujo

Appl. Phys. Lett. 82, 3937 (2003); http://dx.doi.org/10.1063/1.1579559 (3 pages) | Cited 8 times

Online Publication Date: 27 May 2003

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We have investigated the effect of reducing the thickness of strontium bismuth tantalate film to as low as 25 nm on its ferroelectric characteristics. A degradation of ferroelectric properties such as significant reduction in remanent polarization is generally observed with reduction in film thickness, in particular below 100 nm. This has been overcome by using a modified deposition process sequence and a crystallization technique based completely on the rapid thermal annealing process. The resulting ultrathin films show good remanent polarization, low-voltage saturation, low leakage current, high breakdown strength, and good endurance. These films demonstrate the potential for scaling and are excellent candidates for several generations of ferroelectric random access memory applications. © 2003 American Institute of Physics.
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77.80.-e Ferroelectricity and antiferroelectricity
77.55.-g Dielectric thin films
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
68.55.-a Thin film structure and morphology
61.72.Cc Kinetics of defect formation and annealing
77.22.Jp Dielectric breakdown and space-charge effects
77.22.Ej Polarization and depolarization

High-temperature ferroelastic phase transitions in Li–Na niobate compounds

B. Jiménez, A. Castro, and L. Pardo

Appl. Phys. Lett. 82, 3940 (2003); http://dx.doi.org/10.1063/1.1580648 (3 pages) | Cited 7 times

Online Publication Date: 27 May 2003

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Measurements of mechanoelastic properties as a function of the temperature of (LixNa1−x)NbO3 (x ⩽ 0.12) ceramics in the paraelectric phase show a sequence of anomalies in the complex Young’s modulus Y∗. These anomalies are associated with structural phase transitions of the ferro–ferroelastic and ferro–paraelastic type, where strong elastic softening due to the order-parameter–spontaneous-strain coupling of linear quadratic character takes place. The existence of NbO6 octahedra tilts and the lack of significant volume change in the phase transition temperatures of the studied compositions allows considering the order parameters in the same way as that invoked in the case of the strontium titanate. © 2003 American Institute of Physics.
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64.70.K- Solid-solid transitions
81.40.Jj Elasticity and anelasticity, stress-strain relations
62.20.D- Elasticity
65.40.De Thermal expansion; thermomechanical effects
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