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2 Jun 2003

Volume 82, Issue 22, pp. 3811-3991

Issue Cover Spotlight Figure

Appl. Phys. Lett. 82, 3958 (2003); http://dx.doi.org/10.1063/1.1579125 (3 pages)

E. Zussman, D. Rittel, and A. L. Yarin
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Wavelength tuning of surface plasmon resonance using dielectric layers on silver island films

G. Xu, M. Tazawa, P. Jin, S. Nakao, and K. Yoshimura

Appl. Phys. Lett. 82, 3811 (2003); http://dx.doi.org/10.1063/1.1578518 (3 pages) | Cited 77 times

Online Publication Date: 27 May 2003

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A simple and effective method was demonstrated to tune surface plasmon resonance (SPR) wavelength of silver island films by introducing a dielectric medium to vary interisland dielectric constant. The medium, either overcoating or sandwiching the silver islands, can make a dramatic effect on the tunability. We had extended the SPR wavelength tunability of standard silver island film substrates from 432 to 482 nm to 506 to 1310 nm using two dielectric layering methods. A generalized Maxwell–Garnett theory was applied to interpret these results. © 2003 American Institute of Physics.
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73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
78.66.Bz Metals and metallic alloys
77.22.Ch Permittivity (dielectric function)
78.68.+m Optical properties of surfaces
77.55.-g Dielectric thin films
68.47.De Metallic surfaces
78.40.Kc Metals, semimetals, and alloys
78.30.Er Solid metals and alloys
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.

Mixing characteristics of InGaAs metal–semiconductor–metal photodetectors with Schottky enhancement layers

H. Shen, K. Aliberti, B. Stann, P. Newman, R. Mehandru, and F. Ren

Appl. Phys. Lett. 82, 3814 (2003); http://dx.doi.org/10.1063/1.1579117 (3 pages) | Cited 2 times

Online Publication Date: 27 May 2003

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We report on the optoelectronic (OE) mixing characteristics of a Schottky-enhanced InGaAs-based metal–semiconductor–metal photodetector (MSM–PD). The measured frequency bandwidth of such a mixer is less than that of a corresponding photodetector. The mixing efficiency depends on the light modulation, local oscillator, and mixed signal frequencies and decreases nonlinearly with decrease in optical power. This is not observed in GaAs-based and non-Schottky-enhanced InGaAs MSM–PDs. We present a circuit model of the OE mixer to explain the experimental results. © 2003 American Institute of Physics.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
81.05.Ea III-V semiconductors
85.30.De Semiconductor-device characterization, design, and modeling
73.40.Sx Metal-semiconductor-metal structures
84.30.Qi Modulators and demodulators; discriminators, comparators, mixers, limiters, and compressors

High-color-rendering light sources consisting of a 350-nm ultraviolet light-emitting diode and three-basal-color phosphors

Toshio Nishida, Tomoyuki Ban, and Naoki Kobayashi

Appl. Phys. Lett. 82, 3817 (2003); http://dx.doi.org/10.1063/1.1580649 (3 pages) | Cited 12 times

Online Publication Date: 27 May 2003

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The high-color-rendering (HCR) potential of the light sources consisting of 350-nm ultraviolet light-emitting diodes (UV-LED) and three-basal-color phosphors was simulated and experimentally confirmed. By using an AlGaN-based UV-LED as an excitation source at the 350-nm wavelength, we measured fluorescence spectra of three-basal-color phosphors, and simulated the optimum phosphor mixture based on the Commission Internationale de l’Eclairage standard light sources D75, D65, D55, D50, C, and A, with HCR indexes (Ra) over 92. We confirmed the potential of HCR of this light source consisting of 350-nm UV-LED and three-basal-color phosphors, by obtaining Ra = 86 ∼ 89 of the incandescent type of standard light source A experimentally. Such high Ra are due to the highly monochromatic UV-LED emission and the wide spectral separation between the UV excitation (350 nm) and visible fluorescences. This combination also provides a diffusive, nonglare light source with highly steady color independent of the emission orientation. We also examined the importance of the separation between the excitation wavelength and the fluorescence emission wavelength for practical lighting applications. © 2003 American Institute of Physics.
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42.72.Bj Visible and ultraviolet sources
85.60.Jb Light-emitting devices
78.55.Et II-VI semiconductors
78.55.Hx Other solid inorganic materials

Beam shaping by a periodic structure with negative refraction

Ilya V. Shadrivov, Andrey A. Sukhorukov, and Yuri S. Kivshar

Appl. Phys. Lett. 82, 3820 (2003); http://dx.doi.org/10.1063/1.1579849 (3 pages) | Cited 45 times

Online Publication Date: 27 May 2003

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We analyze transmission of a layered photonic structure (a one-dimensional photonic crystal) consisting of alternating slabs of two materials with positive and negative refractive index. For the periodic structure with zero averaged refractive index, we demonstrate a number of unique properties of the beam transmission observed in strong beam modification and reshaping. © 2003 American Institute of Physics.
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42.70.Qs Photonic bandgap materials
42.25.Bs Wave propagation, transmission and absorption
42.25.Gy Edge and boundary effects; reflection and refraction
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

Polymeric wavelength filters fabricated using holographic surface relief gratings on azobenzene-containing polymer films

Jae-Wook Kang, Mi-Jeong Kim, Jae-Pil Kim, Seong-Jong Yoo, Jae-Suk Lee, Dong Yu Kim, and Jang-Joo Kim

Appl. Phys. Lett. 82, 3823 (2003); http://dx.doi.org/10.1063/1.1579847 (3 pages) | Cited 23 times

Online Publication Date: 27 May 2003

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Polymeric wavelength filters with Bragg gratings have been fabricated using holographic surface relief gratings on azobenzene polymer films. In order to fabricate Bragg gratings on polymer waveguides, we used holographic surface relief gratings on the azobenzene polymer film as an etch mask and the grating patterns were transferred to the polymer waveguides by O2 reactive ion etching. The grating period was ∼ 500 nm and the depth was ∼ 30 nm with a 10-mm-long Bragg grating length. A transmission dip of −15 dB at the Bragg wavelength and a 3-dB-transmission bandwidth of ∼ 0.2 nm were obtained from the device. © 2003 American Institute of Physics.
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42.79.Ci Filters, zone plates, and polarizers
42.79.Gn Optical waveguides and couplers
42.79.Dj Gratings
42.40.Eq Holographic optical elements; holographic gratings
42.70.Jk Polymers and organics
42.25.Bs Wave propagation, transmission and absorption
42.82.Cr Fabrication techniques; lithography, pattern transfer

Excited-state absorption in NdAl3(BO3)4 laser crystal

A. Brenier, D. Jaque, J. Garcia Solé, and Z. D. Luo

Appl. Phys. Lett. 82, 3826 (2003); http://dx.doi.org/10.1063/1.1579123 (3 pages) | Cited 3 times

Online Publication Date: 27 May 2003

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We present an investigation in NdAl3(BO3)4 (NAB) crystal of the excited-state absorption (ESA) around the main laser lines (1060 and 1338 nm) by the so called excited-state excitation technique. The involved transitions are from the 4F3/2 level toward the 4G7/2+4G9/2+2K13/2 levels (1300–1400 nm range) or toward the 2G9/2+4G11/2+2D3/2+2K15/2 levels (1020–1100 nm range). We have performed the Judd–Ofelt analysis extended to anisotropic crystals in order to get the cross sections (cm2). In each case, the ESA peaks do not coincide with the laser emission ones, but a reduction of the effective laser emission cross section is observed at 1338 nm. Finally, the values obtained from the application of the Judd–Ofelt formalism have been used to estimate the influence of ESA in the pumping domain on the laser performance. It has been found that its contribution is not significant, indicating that NAB is an excellent candidate for efficient high-power microchip lasers emitting at 1060 and 1338 nm. © 2003 American Institute of Physics.
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42.55.Rz Doped-insulator lasers and other solid state lasers

Mutual pulse injection-seeding scheme by the use of two Fabry–Pérot laser diodes for tunable dual-wavelength optical short-pulse generation

D. N. Wang and Xiaohui Fang

Appl. Phys. Lett. 82, 3829 (2003); http://dx.doi.org/10.1063/1.1579846 (3 pages) | Cited 1 time

Online Publication Date: 27 May 2003

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Two Fabry–Pérot laser diodes, one being gain switched and the other dc biased, are used in a mutual pulse injection-seeding scheme for tunable dual-wavelength optical short-pulse generation. Wavelength selection and tuning are achieved by adjusting two fiber Bragg gratings and optical delay lines while a constant repetition frequency of 1.5053 GHz is maintained. An erbium-doped fiber amplifier is employed to enhance light intensity injected to the laser diode. The sidemode suppression ratio of the output pulses achieved is better than 25 dB over the wavelength-tuning range of 12.1 nm. The system is robust, flexible, and convenient for wavelength tuning. © 2003 American Institute of Physics.
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42.60.Fc Modulation, tuning, and mode locking
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Orange and red upconversion laser pumped by an avalanche mechanism in Pr3+, Yb3+:BaY2F8

E. Osiac, E. Heumann, G. Huber, S. Kück, E. Sani, A. Toncelli, and M. Tonelli

Appl. Phys. Lett. 82, 3832 (2003); http://dx.doi.org/10.1063/1.1579561 (3 pages) | Cited 25 times

Online Publication Date: 27 May 2003

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The letter reports on upconverted orange (607.5 nm, 3P0→3H6) and red (638.7 nm, 3P0→3F2) laser oscillation at room temperature observed in Pr3+, Yb3+:BaY2F8 under excitation at 822 or 841 nm at 300 K. The upconversion mechanism that populates the emitting level is an avalanche excitation mechanism. Output powers up to 55 mW and slope efficiencies up to 27% were demonstrated at 607.5 nm. At 638.7 nm, the maximum output power was 26 mW with a slope efficiency of about 13.5%. © 2003 American Institute of Physics.
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42.55.Rz Doped-insulator lasers and other solid state lasers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Photonic crystal structure with square symmetry within each layer and a three-dimensional band gap

David Roundy and John Joannopoulos

Appl. Phys. Lett. 82, 3835 (2003); http://dx.doi.org/10.1063/1.1579873 (3 pages) | Cited 15 times

Online Publication Date: 27 May 2003

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We present a layered photonic crystal structure having a connectivity that is different from diamond which possesses square symmetry within each layer. This structure has a complete photonic band gap of 18% of the midgap frequency with a dielectric contrast of 12:1, and is a structure with layered square symmetry having a gap greater than 10%. We demonstrate a waveguide in this crystal created by removing a row of rods from a single layer. © 2003 American Institute of Physics.
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42.70.Qs Photonic bandgap materials
42.79.Gn Optical waveguides and couplers

A 33% efficient chemical oxygen–iodine laser with supersonic mixing of iodine and oxygen

V. Rybalkin, A. Katz, B. D. Barmashenko, and S. Rosenwaks

Appl. Phys. Lett. 82, 3838 (2003); http://dx.doi.org/10.1063/1.1580634 (3 pages) | Cited 9 times

Online Publication Date: 27 May 2003

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We report on a highly efficient supersonic chemical oxygen–iodine laser (COIL), with supersonic mixing of iodine and oxygen. Output power exceeding 0.5 kW with chemical efficiency of ∼33% was obtained in a 5-cm gain length for Cl2 flow rate of 17 mmole/s. A 33% efficiency is the highest reported chemical efficiency of any supersonic COIL. Comparison between different mixing schemes shows that, for supersonic mixing, the output power and chemical efficiency are about 20% higher than for transonic mixing scheme. The optimal conditions for the efficient operation are investigated. © 2003 American Institute of Physics.
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42.55.Ks Chemical lasers
42.60.By Design of specific laser systems
47.40.Ki Supersonic and hypersonic flows
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
47.60.-i Flow phenomena in quasi-one-dimensional systems

Single-pass gain in a chirped quasi-phase-matched optical parametric oscillator

K. L. Baker

Appl. Phys. Lett. 82, 3841 (2003); http://dx.doi.org/10.1063/1.1579848 (3 pages) | Cited 6 times

Online Publication Date: 27 May 2003

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In this letter, the single-pass gain of a quasi-phase-matched optical parametric oscillator with chirped poling is calculated. Specifically, the single-pass gain from optical parametric oscillators containing a zn chirped profile of their periodically poled grating wavelength is derived. Using the calculated gain, the parametric oscillator threshold is determined. Both the gain and threshold condition for a chirped device contain an increased power scaling in the pump intensity over a uniformly poled device due to the pump power dependence in the interaction length. The chirped poling structure exhibits a lower gain, a higher threshold, and a larger bandwidth at threshold than uniformly chirped devices with the same overall crystal length. © 2003 American Institute of Physics.
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42.65.Lm Parametric down conversion and production of entangled photons
77.22.Ej Polarization and depolarization
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