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2 Jun 2003

Volume 82, Issue 22, pp. 3811-3991

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Appl. Phys. Lett. 82, 3958 (2003); http://dx.doi.org/10.1063/1.1579125 (3 pages)

E. Zussman, D. Rittel, and A. L. Yarin
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Spin-torque transistor

Gerrit E. W. Bauer, Arne Brataas, Yaroslav Tserkovnyak, and Bart J. van Wees

Appl. Phys. Lett. 82, 3928 (2003); http://dx.doi.org/10.1063/1.1579122 (3 pages) | Cited 28 times

Online Publication Date: 27 May 2003

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A magnetoelectronic thin-film transistor is proposed that can display negative differential resistance and gain. The working principle is the modulation of the soure–drain current in a spin valve by the magnetization of a third electrode, which is rotated by the spin-torque created by a control spin valve. The device can operate at room temperature, but in order to be useful, ferromagnetic materials with polarizations close to unity are required. © 2003 American Institute of Physics.
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85.75.Hh Spin polarized field effect transistors
85.70.Kh Magnetic thin film devices: magnetic heads (magnetoresistive, inductive, etc.); domain-motion devices, etc.
85.30.Tv Field effect devices
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