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2 Jun 2003

Volume 82, Issue 22, pp. 3811-3991

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Appl. Phys. Lett. 82, 3958 (2003); http://dx.doi.org/10.1063/1.1579125 (3 pages)

E. Zussman, D. Rittel, and A. L. Yarin
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Tomography in the multiple scattering regime of the scanning transmission electron microscope

Zachary H. Levine

Appl. Phys. Lett. 82, 3943 (2003); http://dx.doi.org/10.1063/1.1579116 (3 pages) | Cited 10 times

Online Publication Date: 27 May 2003

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To date, nearly all tomography based on electron microscopy has been performed on samples 1 μm or less thick. It has also relied on Beer’s Law. In this work, tomographic reconstructions of simulated scans of a photonic band-gap crystal based on bright-field imaging with a scanning transmission electron microscope are made assuming (1) multiple scattering or (2) the standard Beer’s Law model. The results suggest that it should be possible to treat systems several times larger than those which appear in literature, albeit at a worse resolution. The multiple scattering theory leads to high-quality reconstructions. Beer’s Law does only a little worse despite being applied outside its range of validity.
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07.78.+s Electron, positron, and ion microscopes; electron diffractometers
68.37.Lp Transmission electron microscopy (TEM)

Single-electron charging of a self-assembled II–VI quantum dot

J. Seufert, M. Rambach, G. Bacher, A. Forchel, T. Passow, and D. Hommel

Appl. Phys. Lett. 82, 3946 (2003); http://dx.doi.org/10.1063/1.1580632 (3 pages) | Cited 13 times

Online Publication Date: 27 May 2003

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We have studied single-electron injection into individual self-assembled CdSe/ZnSe quantum dots. Using nanostructured contacts to apply a vertical electric field, excess electrons are promoted to the single-quantum-dot ground state in a controlled fashion. Spatially-resolved photoluminescence spectroscopy is applied to demonstrate single-quantum-dot charging via the formation of single zero-dimensional charged excitons with a binding energy on the order of 10 meV. © 2003 American Institute of Physics.
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73.21.La Quantum dots
78.67.Hc Quantum dots
73.63.Kv Quantum dots
71.35.Pq Charged excitons (trions)
78.55.Et II-VI semiconductors
81.07.Ta Quantum dots

Electronic structure of GaN nanowire studied by x-ray-absorption spectroscopy and scanning photoelectron microscopy

J. W. Chiou, J. C. Jan, H. M. Tsai, W. F. Pong, M.-H. Tsai, I.-H. Hong, R. Klauser, J. F. Lee, C. W. Hsu, H. M. Lin, C. C. Chen, C. H. Shen, L. C. Chen, and K. H. Chen

Appl. Phys. Lett. 82, 3949 (2003); http://dx.doi.org/10.1063/1.1579871 (3 pages) | Cited 13 times

Online Publication Date: 27 May 2003

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X-ray absorption near edge structure (XANES) and scanning photoelectron microscopy (SPEM) measurements have been employed to obtain information on the electronic structures of the GaN nanowires and thin film. The comparison of the XANES spectra revealed that the nanowires have a smaller (larger) N (Ga) K edge XANES intensity than that of the thin film, which suggests an increase (decrease) of the occupation of N 2p (Ga 4p) orbitals and an increase of the N (Ga) negative (positive) effective charge in the nanowires. The SPEM spectra showed that the Ga 3d band for the nanowires lies about 20.8 eV below the Fermi level and has a chemical shift of about −0.9 eV relative to that of the thin film. © 2003 American Institute of Physics.
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73.22.Dj Single particle states
78.70.Dm X-ray absorption spectra
79.60.Jv Interfaces; heterostructures; nanostructures
68.37.Xy Scanning Auger microscopy, photoelectron microscopy

Nonlocal resonant interaction between coupled quantum wires

T. Morimoto, Y. Iwase, N. Aoki, T. Sasaki, Y. Ochiai, A. Shailos, J. P. Bird, M. P. Lilly, J. L. Reno, and J. A. Simmons

Appl. Phys. Lett. 82, 3952 (2003); http://dx.doi.org/10.1063/1.1579851 (3 pages) | Cited 34 times

Online Publication Date: 27 May 2003

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We study the transport in a system of coupled quantum wires and show evidence for a resonant interaction that occurs whenever one of them is biased close to pinch off. Measuring the conductance of one of the wires, as the width of the other is varied, we observe a resonant peak in the conductance that is correlated to the point at which the other wire pinches off. The origin of this interaction remains undetermined at present, although its characteristics appear consistent with predictions that a correlated many-body state should form in narrow wires as their conductance vanishes. © 2003 American Institute of Physics.
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73.23.-b Electronic transport in mesoscopic systems
73.63.Nm Quantum wires
73.21.Hb Quantum wires
73.63.Rt Nanoscale contacts

Photovoltaic effect on differential capacitance profiles of low-energy-BF2+-implanted silicon wafers

M. N. Chang, C. Y. Chen, F. M. Pan, J. H. Lai, W. W. Wan, and J. H. Liang

Appl. Phys. Lett. 82, 3955 (2003); http://dx.doi.org/10.1063/1.1581987 (3 pages) | Cited 12 times

Online Publication Date: 27 May 2003

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Using scanning capacitance microscopy (SCM), we have studied the photovoltaic effect on differential capacitance (dC/dV) signals of low-energy-BF2+-implanted silicon wafers. The surface photovoltage induced by the stray light of the atomic force microscope laser beam leads to distorted dC/dV profiles and hence perturbs the contrast of SCM images. Due to the photovoltaic effect on the junction region, the observed junction image also exhibits a narrower junction width. According to this study, the photovoltaic effect not only significantly affects the dC/dV signals but also deteriorates the accuracy of junction characterization, in particular for ultrashallow junctions and lower band-gap semiconductors. © 2003 American Institute of Physics.
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61.72.uf Ge and Si
72.40.+w Photoconduction and photovoltaic effects
68.37.Ps Atomic force microscopy (AFM)

Failure modes of electrospun nanofibers

E. Zussman, D. Rittel, and A. L. Yarin

Appl. Phys. Lett. 82, 3958 (2003); http://dx.doi.org/10.1063/1.1579125 (3 pages) | Cited 33 times

Online Publication Date: 27 May 2003

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Failure modes of electrospun polymer nanofibers are reported. The nanofibers have diameters in the range of 80–400 nm and lengths greater then several centimeters. The nanofibers fail by a multiple necking mechanism, sometimes followed by the development of a fibriliar structure. This phenomenon is attributed to a strong stretching of solidified nanofibers by the tapered accumulating wheel (electrostatic lens), if its rotation speed becomes too high. Necking has not been observed in the nanofibers collected on a grounded plate. © 2003 American Institute of Physics.
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61.46.-w Structure of nanoscale materials
81.07.Bc Nanocrystalline materials
62.25.-g Mechanical properties of nanoscale systems
81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials
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