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2 Jun 2003

Volume 82, Issue 22, pp. 3811-3991

Issue Cover Spotlight Figure

Appl. Phys. Lett. 82, 3958 (2003); http://dx.doi.org/10.1063/1.1579125 (3 pages)

E. Zussman, D. Rittel, and A. L. Yarin
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Epitaxial (100) iridium on A-plane sapphire: A system for wafer-scale diamond heteroepitaxy

Z. Dai, C. Bednarski-Meinke, R. Loloee, and B. Golding

Appl. Phys. Lett. 82, 3847 (2003); http://dx.doi.org/10.1063/1.1579560 (3 pages) | Cited 15 times

Online Publication Date: 27 May 2003

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Large-scale heteroepitaxial growth of diamond depends critically on the development of a suitable lattice-matched buffer layer and substrate system. Epitaxial (100) iridium films have been grown on terraced, vicinal a-plane (11math0) α-Al2O3 (sapphire) by electron-beam evaporation. The epitaxial relationship, Ir(100)//Al2O3(11math0) with Ir[011]//Al2O3[1math00], was determined by x-ray diffraction and electron backscattering diffraction analysis. For a 300-nm thickness of Ir, a (200) rocking curve yielded a linewidth of 0.21°, and the film exhibited a macrostepped surface with low pinhole density. This Ir/sapphire system provides a basis for large-area growth of (100) heteroepitaxial diamond. © 2003 American Institute of Physics.
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68.55.A- Nucleation and growth
81.05.U- Carbon/carbon-based materials
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Polarization anisotropy of the photoluminescence of M-plane (In,Ga)N/GaN multiple quantum wells

Yue Jun Sun, Oliver Brandt, Manfred Ramsteiner, Holger T. Grahn, and Klaus H. Ploog

Appl. Phys. Lett. 82, 3850 (2003); http://dx.doi.org/10.1063/1.1579563 (3 pages) | Cited 48 times

Online Publication Date: 27 May 2003

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We investigate the polarization anisotropy of the photoluminescence of an M-plane (1math00) In0.1Ga0.9N/GaN multiple quantum well grown on γ-LiAlO2 (100) by molecular-beam epitaxy. In contrast to C-plane (0001) structures, a strong in-plane optical anisotropy with an energy-dependent polarization degree of up to 96% is observed for this M-plane sample. An apparent spectral shift of the emission with polarization angle is attributed to the impact of exciton localization on the polarization degree. The presence of localized states manifests itself further in the anomalous temperature dependence of the photoluminescence linewidth. © 2003 American Institute of Physics.
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78.55.Cr III-V semiconductors
78.67.De Quantum wells
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
71.35.Cc Intrinsic properties of excitons; optical absorption spectra

Strain partition of Si/SiGe and SiO2/SiGe on compliant substrates

H. Yin, K. D. Hobart, F. J. Kub, S. R. Shieh, T. S. Duffy, and J. C. Sturm

Appl. Phys. Lett. 82, 3853 (2003); http://dx.doi.org/10.1063/1.1578168 (3 pages) | Cited 25 times

Online Publication Date: 27 May 2003

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Strain partitioning of crystalline Si and amorphous SiO2 deposited on crystalline SiGe on a compliant viscous borophosphorosilicate (BPSG) glass has been observed. Pseudomorphic epitaxial Si was deposited on SiGe films, which were fabricated on BPSG by wafer bonding and the Smart-cut® process. The strains in SiGe and Si films were found to change identically during a high-temperature anneal which softened the BPSG film, indicating a coherent interface between SiGe and Si films and precluding slippage or the formation of misfit dislocations along the interface. The stress balance between the layers dictated the final state, which confirmed that BPSG was a perfectly compliant substrate and did not exert any force on the layers above it. Similar results were found for amorphous SiO2 deposited on SiGe on BPSG and then annealed. This shows that the viscous BPSG is an effective compliant substrate for the strain engineering of elastic films without the introduction of dislocations. © 2003 American Institute of Physics.
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68.60.Bs Mechanical and acoustical properties
68.35.Np Adhesion
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
68.35.Ct Interface structure and roughness

Spatially resolved Poisson strain and anticlastic curvature measurements in Si under large deflection bending

Wenge Yang, B. C. Larson, G. E. Ice, J. Z. Tischler, J. D. Budai, K.-S. Chung, and W. P. Lowe

Appl. Phys. Lett. 82, 3856 (2003); http://dx.doi.org/10.1063/1.1579857 (3 pages) | Cited 20 times

Online Publication Date: 27 May 2003

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A scanning-monochromatic form of differential-aperture x-ray microscopy (DAXM) has been developed that provides micron-resolution depth-resolved dilatational strain measurements. This scanning-monochromatic DAXM technique is applied to measurements of Poisson dilatational strain in 25-μm-thick Si bent into an arch with an apex radius of R = 3 mm. Poisson strain measurements agree with anisotropic linear elasticity calculations for a Searle parameter as large as β = 1009. Local anticlastic bend radii were shown to oscillate across the arch and reach the R/ν limit for distances less than the plate thickness from the edges, where ν is the anisotropic Poisson’s ratio. © 2003 American Institute of Physics.
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62.20.D- Elasticity
62.20.F- Deformation and plasticity
46.80.+j Measurement methods and techniques in continuum mechanics of solids

Structure and optical anisotropy of vertically correlated submonolayer InAs/GaAs quantum dots

Zhangcheng Xu, Dan Birkedal, Jørn M. Hvam, Zongyan Zhao, Yanmei Liu, Kuntang Yang, Aloke Kanjilal, and Janusz Sadowski

Appl. Phys. Lett. 82, 3859 (2003); http://dx.doi.org/10.1063/1.1581005 (3 pages) | Cited 15 times

Online Publication Date: 27 May 2003

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A vertically correlated submonolayer (VCSML) InAs/GaAs quantum-dot (QD) heterostructure was studied using transmission electron microscopy, high-resolution x-ray diffraction (HRXRD) and polarization-dependent photoluminescence. The HRXRD (004) rocking curve was simulated using the Tagaki–Taupin equations. Excellent agreement between the experimental curve and the simulation is achieved assuming that indium-rich VCSML QDs are embedded in a quantum well (QW) with lower indium content and an observed QD coverage of 10%. In the VCSML QDs, the vertical lattice mismatch of the InAs monolayer with respect to GaAs is around 1.4%, while the lattice mismatch in the QW is negligible. The photoluminescence is transverse magnetic—polarized in the edge geometry. © 2003 American Institute of Physics.
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68.65.Hb Quantum dots (patterned in quantum wells)
78.67.Hc Quantum dots
78.55.Cr III-V semiconductors

Electroluminescence of a quantum dot cascade structure

S. Anders, L. Rebohle, F. F. Schrey, W. Schrenk, K. Unterrainer, and G. Strasser

Appl. Phys. Lett. 82, 3862 (2003); http://dx.doi.org/10.1063/1.1579854 (3 pages) | Cited 17 times

Online Publication Date: 27 May 2003

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We present electroluminescence and photocurrent measurements on InAs quantum dots that are embedded into a cascaded GaAs/AlAs structure. Compared to a quantum cascade laser, population inversion in a quantum dot cascade laser should potentially occur at a lower threshold. The electroluminescence spectra of our device peak in the midinfrared at about 150 meV. From the polarization behavior of the electroluminescence, we conclude that quantum dots are the origin of the optical transition. © 2003 American Institute of Physics.
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78.67.Hc Quantum dots
78.60.Fi Electroluminescence
73.63.Kv Quantum dots
42.55.Px Semiconductor lasers; laser diodes
73.50.Pz Photoconduction and photovoltaic effects

Electrically active defects in silicon produced by ion channeling

H. Kortegaard Nielsen, B. G. Svensson, J.-J. Goubet, and A. Nylandsted Larsen

Appl. Phys. Lett. 82, 3865 (2003); http://dx.doi.org/10.1063/1.1580640 (3 pages) | Cited 1 time

Online Publication Date: 27 May 2003

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Low-dose implantations with 65 Si and 150 keV Ge ions into the n+ top layer of Si n+p diodes have been carried out. The defects produced in deeper-lying layers were studied by deep level transient spectroscopy. Results were compared to crystal-TRIM calculations and results from 2 MeV electron irradiations. Previously, ion channeling was disregarded in studies on point defect migration at room temperature using ion implantation in surface layers. In our studies, ion channeling is dominant and it overwhelms any contribution from point defect diffusion. © 2003 American Institute of Physics.
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61.85.+p Channeling phenomena (blocking, energy loss, etc.)
61.82.Fk Semiconductors
61.80.Jh Ion radiation effects
61.72.uf Ge and Si
71.55.Cn Elemental semiconductors
61.80.Fe Electron and positron radiation effects

Time-resolved energy dispersive x-ray reflectometry measurements on ruthenium phthalocyanine gas sensing films

V. Rossi Albertini, A. Generosi, B. Paci, P. Perfetti, G. Rossi, A. Capobianchi, A. M. Paoletti, and R. Caminiti

Appl. Phys. Lett. 82, 3868 (2003); http://dx.doi.org/10.1063/1.1579868 (3 pages) | Cited 15 times

Online Publication Date: 27 May 2003

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The energy dispersive (ED) variant of the conventional x-ray reflectivity (XR) provides an atomic scale determination of the morphological characteristics of thin films, such as their thickness and surface roughness. We report on the in situ EDXR measurements of the (minimal) morphological changes of ruthenium phthalocyanine gas sensing thin films. A series of reflectivity spectra have been collected, during the exposure of the films to a gas flux of nitrogen oxides (NOx) molecules. The measurements allowed a very high density time sampling of the evolution of the two morphological parameters, providing important information on the gas-film interaction. © 2003 American Institute of Physics.
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07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
68.55.-a Thin film structure and morphology
61.05.cm X-ray reflectometry (surfaces, interfaces, films)

Sensitizing properties of amorphous Si clusters on the 1.54-μm luminescence of Er in Si-rich SiO2

G. Franzò, S. Boninelli, D. Pacifici, F. Priolo, F. Iacona, and C. Bongiorno

Appl. Phys. Lett. 82, 3871 (2003); http://dx.doi.org/10.1063/1.1579555 (3 pages) | Cited 79 times

Online Publication Date: 27 May 2003

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In this letter, the role of amorphous Si clusters in the excitation of Er implanted in substoichiometric SiOx films will be elucidated. It will be shown that the temperature of the SiOx thermal process prior to Er implantation is crucial in determining the luminescence properties of the samples. In particular, the luminescence intensity at 1.54 μm is almost constant for SiOx samples not annealed or pre-annealed at temperatures lower than 800 °C, reaches the maximum at 800 °C, and decreases at higher temperatures. The structural properties of these samples have been studied by energy filtered transmission electron microscopy. It will be shown that for annealing temperatures lower than 1000 °C, only amorphous Si nanoclusters are present. We demonstrate that a large density of small amorphous Si clusters produces the best luminescence performance and enhances the fraction of optically active Er. © 2003 American Institute of Physics.
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78.55.Hx Other solid inorganic materials
61.72.up Other materials
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
61.72.Cc Kinetics of defect formation and annealing
78.66.Nk Insulators

Band gap of GaAs1−xBix, 0<x<3.6%

S. Francoeur, M.-J. Seong, A. Mascarenhas, S. Tixier, M. Adamcyk, and T. Tiedje

Appl. Phys. Lett. 82, 3874 (2003); http://dx.doi.org/10.1063/1.1581983 (3 pages) | Cited 77 times

Online Publication Date: 27 May 2003

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The band gap of GaAsBi epitaxial layers as a function of bismuth concentration up to 3.6% is determined. The optical transitions were measured by modulated electroreflectance. The energy of the band gap decreases at a linearized rate of 88 meV/% Bi, or 83 meV/% Bi for the heavy hole to conduction band transition for GaAsBi strained to GaAs. The valence-band splitting increases faster than that of GaAs under similar compressive strain whereas the temperature dependence of the observed GaAsBi transitions is similar to that of GaAs. © 2003 American Institute of Physics.
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71.20.Nr Semiconductor compounds
81.05.Ea III-V semiconductors
71.55.Eq III-V semiconductors
78.66.Fd III-V semiconductors
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
78.20.Jq Electro-optical effects

Visible photoluminescence in amorphous SiOx thin films prepared by silicon evaporation under a molecular oxygen atmosphere

M. Molinari, H. Rinnert, and M. Vergnat

Appl. Phys. Lett. 82, 3877 (2003); http://dx.doi.org/10.1063/1.1578710 (3 pages) | Cited 20 times

Online Publication Date: 27 May 2003

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A simple reactive evaporation method is proposed to prepare light-emitting amorphous SiOx thin films. By evaporating pure silicon in a controlled molecular oxygen atmosphere, it is possible to obtain a very large composition range. By changing the pressure in the preparation chamber, x can be varied from 0.7 to 1.85. The composition and the structure of the films were investigated using energy dispersive x-ray, infrared absorption and x-ray photoelectron spectroscopies. The samples contain amorphous silicon clusters dispersed inside an insulating silicon oxide matrix. The room-temperature photoluminescence properties were then measured. By conveniently choosing the oxygen pressure, the as-deposited films exhibit visible photoluminescence without any annealing post-treatments. The luminescence intensity initially increases with excess silicon concentration and then disappears for a too-high silicon excess. The above effect is interpreted in terms of confinement of the amorphous silicon clusters in the insulating matrix. © 2003 American Institute of Physics.
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78.55.Qr Amorphous materials; glasses and other disordered solids
78.66.Jg Amorphous semiconductors; glasses
68.55.Nq Composition and phase identification
61.43.Er Other amorphous solids
81.15.Kk Vapor phase epitaxy; growth from vapor phase
79.60.Ht Disordered structures
78.35.+c Brillouin and Rayleigh scattering; other light scattering
82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)
82.80.Ej X-ray, Mössbauer, and other γ-ray spectroscopic analysis methods

Void nucleation in thin HfO2 layer on Si

Noriyuki Miyata, Toshihide Nabatame, Tsuyoshi Horikawa, Masakazu Ichikawa, and Akira Toriumi

Appl. Phys. Lett. 82, 3880 (2003); http://dx.doi.org/10.1063/1.1581006 (3 pages) | Cited 18 times

Online Publication Date: 27 May 2003

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We examined void nucleation in a thin HfO2 film on Si at 820–920 °C in an ultrahigh vacuum. The clustering of mobile species on the HfO2 surface led to the opening of micron-scale voids containing Hf silicide. The incubation period observed for void nucleation exhibited transition of decomposition process with activation energies of 2.3 eV (<890 °C) and 11 eV (>890 °C). We propose that the former energy corresponds to the creation of mobile species and the latter to the decomposition of the HfO2 film under the cluster. © 2003 American Institute of Physics.
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77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
77.55.-g Dielectric thin films
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
61.72.Qq Microscopic defects (voids, inclusions, etc.)
68.60.Dv Thermal stability; thermal effects

Observation of self-organized superlattice in AlGaInAsSb pentanary alloys

D. H. Jaw, J. R. Chang, and Y. K. Su

Appl. Phys. Lett. 82, 3883 (2003); http://dx.doi.org/10.1063/1.1581979 (3 pages) | Cited 3 times

Online Publication Date: 27 May 2003

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An unexpected self-organized superlattice structure has been observed in the AlGaInAsSb pentanary alloys grown by metalorganic vapor-phase epitaxy. The samples were studied by transmission electron microscopy, double-crystal x-ray diffraction, and secondary ion mass spectrometry measurements. The modulation strength and period of the self-organized superlattice are correlated to the alloy composition. © 2003 American Institute of Physics.
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68.65.Cd Superlattices
81.05.Ea III-V semiconductors
68.37.Lp Transmission electron microscopy (TEM)
61.05.cp X-ray diffraction
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces

Mode analysis in He+-implanted lithium fluoride planar waveguides

V. Mussi, F. Somma, P. Moretti, J. Mugnier, B. Jacquier, R. M. Montereali, and E. Nichelatti

Appl. Phys. Lett. 82, 3886 (2003); http://dx.doi.org/10.1063/1.1577822 (3 pages) | Cited 5 times

Online Publication Date: 27 May 2003

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The depth refractive index profiles of broadband visible-emitting planar waveguides produced in LiF crystals with 1.5- and 2-MeV He+ ions at different doses have been derived from mode analysis. They show that there are two competitive mechanisms responsible for positive and negative modifications of the refractive index in the irradiated volume associated with different processes of energy deposition of the incident ions, so as to induce a complex coloration profile along the penetration direction, which is strongly dependent on the irradiation dose. © 2003 American Institute of Physics.
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42.82.Et Waveguides, couplers, and arrays
61.72.up Other materials
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
61.80.Jh Ion radiation effects
42.82.Cr Fabrication techniques; lithography, pattern transfer
42.79.Gn Optical waveguides and couplers
61.82.Ms Insulators

Energy level evolution at a silole/magnesium thin-film interface

A. J. Mäkinen, M. Uchida, and Z. H. Kafafi

Appl. Phys. Lett. 82, 3889 (2003); http://dx.doi.org/10.1063/1.1579558 (3 pages) | Cited 12 times

Online Publication Date: 27 May 2003

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Photoemission spectroscopy of an interface formed through step-by-step deposition of Mg onto a film of a silole derivative, 2,5-bis[6′-(2′,2″-bipyridyl)]-1,1-dimethyl-3,4-diphenyl silacyclopentadiene (PyPySPyPy), reveals the formation of gap states arising from electron transfer from the metal to the organic. In addition, a 0.3-eV rigid shift of the molecular orbitals toward higher binding energy is observed, while the work function of the Mg-rich PyPySPyPy surface is reduced by 0.6 eV. The observed energy level evolution elucidates how the electronic structure of the Mg/PyPySPyPy interface depends on the chemical interaction between the metal and the organic. This is important for understanding and optimizing electron injection at the Mg/PyPySPyPy interface, which can be incorporated in electronic, electro-optic, and optoelectronic devices. © 2003 American Institute of Physics.
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73.40.Ns Metal-nonmetal contacts
79.60.Jv Interfaces; heterostructures; nanostructures
73.30.+y Surface double layers, Schottky barriers, and work functions

GaAs film on Si substrate transplanted from GaAs/Ge structure by direct bonding

N. Chandrasekaran, T. Soga, and T. Jimbo

Appl. Phys. Lett. 82, 3892 (2003); http://dx.doi.org/10.1063/1.1581976 (3 pages) | Cited 8 times

Online Publication Date: 27 May 2003

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A process to transplant GaAs film from a Ge substrate to Si substrate using a direct bonding method is proposed. The scanning electron microscopy picture shows that the GaAs film is uniformly transplanted from Ge to Si. The high-resolution transmission electron microscopy image shows that GaAs is connected to Si by the covalent bonds. The stress of the bonded GaAs on Si is compared with GaAs/GaAs and heteroepitaxially grown GaAs/Ge(before bonding) by a 4.2 K photoluminescence method. The difference in the residual stress between the bonded GaAs/Si sample and GaAs/Si grown by two-step growth is explained by a thermal stress relaxation mechanism during the cooling process. © 2003 American Institute of Physics.
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68.60.Bs Mechanical and acoustical properties
81.05.Ea III-V semiconductors
68.37.Lp Transmission electron microscopy (TEM)
68.37.Hk Scanning electron microscopy (SEM) (including EBIC)
68.47.Fg Semiconductor surfaces
78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors
68.55.-a Thin film structure and morphology
68.35.Np Adhesion
62.40.+i Anelasticity, internal friction, stress relaxation, and mechanical resonances
85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology

Temperature dependence of photoreflectance in InAs/GaAs quantum dots

C. M. Lai, F. Y. Chang, C. W. Chang, C. H. Kao, H. H. Lin, G. J. Jan, and Johnson Lee

Appl. Phys. Lett. 82, 3895 (2003); http://dx.doi.org/10.1063/1.1581003 (3 pages) | Cited 6 times

Online Publication Date: 27 May 2003

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Temperature dependent photoreflectance (PR) and photoluminescence experiments of the InAs/GaAs quantum dot (QD) structures were performed. At 20 K, effective band-gap transitions due to the InAs QDs, wetting layers, and GaAs buffer and cap layers were identified. Transition energies of the ground state and four excited states with nearly equal interlevel spacings (75–80 meV) were observed. The linewidth of the ground-state transition decreased as the temperature increased from 20 K to 100 K while the linewidth became broader at temperatures above 100 K. Energy features of the PR spectra originating from QDs and relating to the in-plane parabolic potentials were discussed. © 2003 American Institute of Physics.
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78.67.Hc Quantum dots
78.55.Cr III-V semiconductors
73.21.La Quantum dots

The effect of the surface layer of tetrahedral amorphous carbon films on their tribological and electron emission properties investigated by atomic force microscopy

Dongping Liu, Günther Benstetter, and Werner Frammelsberger

Appl. Phys. Lett. 82, 3898 (2003); http://dx.doi.org/10.1063/1.1581367 (3 pages) | Cited 19 times

Online Publication Date: 27 May 2003

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The nanowear resistance, tribological, and field emission properties of tetrahedral amorphous carbon (ta-C) films have been analyzed by atomic force microscope (AFM)-based wear testing technique, lateral force microscope, and conducting AFM. The ta-C films grown by filtered pulsed cathodic arc discharge were found to have soft surface layers, 1.1±0.1 nm thick, which contribute to an improvement of their field emission properties. The low friction coefficient between the nanotip and film surface is correlated to one or two graphite-like atomic layers at the ta-C film surfaces. The analysis of Fowler–Nordheim tunneling currents indicates the formation of filament-like emission channels in amorphous carbon films. © 2003 American Institute of Physics.
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81.05.U- Carbon/carbon-based materials
81.40.Pq Friction, lubrication, and wear
68.60.Bs Mechanical and acoustical properties
62.20.Qp Friction, tribology, and hardness
68.37.Ps Atomic force microscopy (AFM)
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
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