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9 Jun 2003

Volume 82, Issue 23, pp. 4011-4195

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Appl. Phys. Lett. 82, 4160 (2003); http://dx.doi.org/10.1063/1.1580641 (3 pages)

Eva M. Höhberger, Tomas Krämer, Werner Wegscheider, and Robert H. Blick
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Development of gold-doped Hg0.79Cd0.21Te for very-long-wavelength infrared detectors

H. D. Shih, M. A. Kinch, F. Aqariden, P. K. Liao, H. F. Schaake, and V. Nathan

Appl. Phys. Lett. 82, 4157 (2003); http://dx.doi.org/10.1063/1.1581369 (3 pages) | Cited 4 times

Online Publication Date: 2 June 2003

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Gold-doped Hg1−xCdxTe samples of x = 0.2067 (in the very-long-wavelength infrared spectral band, with cutoff wavelengths ∼13.2 μm at 77 K) were prepared by tellurium-melt liquid-phase epitaxy. The samples were doped with indium to ∼ 2×1014 cm−3 and gold to ∼ 7×1015 cm−3, and were characterized by secondary ion mass spectroscopy, Hall measurements, and minority carrier lifetime measurements. State-of-the-art minority carrier lifetime of ∼0.82 μs was obtained. © 2003 American Institute of Physics.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
73.61.Ga II-VI semiconductors
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)

In situ control of electron gas dimensionality in freely suspended semiconductor membranes

Eva M. Höhberger, Tomas Krämer, Werner Wegscheider, and Robert H. Blick

Appl. Phys. Lett. 82, 4160 (2003); http://dx.doi.org/10.1063/1.1580641 (3 pages) | Cited 12 times

Online Publication Date: 2 June 2003

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We present fabrication and measurements of gated suspended low-dimensional electron systems. The core component of the device is a low-dimensional electron gas embedded in a free-standing beam processed from a GaAs/AlGaAs heterostructure. The dimensionality of the electronic system is fully controlled by a number of gating electrodes on the suspended membranes. Operation in the quantum Hall regime, in the one-dimensional case, and as zero-dimensional quantum dots is demonstrated. The resulting devices can be applied as ultrasensitive bolometers and as nanoelectromechanical circuits that reach the ultimate limits of displacement detection. © 2003 American Institute of Physics.
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73.61.Ey III-V semiconductors
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.43.-f Quantum Hall effects
73.21.La Quantum dots

Polycrystalline silicon/CoSi2 Schottky diode with integrated SiO2 antifuse: a nonvolatile memory cell

S. B. Herner, M. Mahajani, M. Konevecki, E. Kuang, S. Radigan, and S. V. Dunton

Appl. Phys. Lett. 82, 4163 (2003); http://dx.doi.org/10.1063/1.1581364 (3 pages) | Cited 10 times

Online Publication Date: 2 June 2003

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A Schottky diode consisting of doped polycrystalline silicon (polysilicon) and CoSi2 films is described. When an SiO2 antifuse thin film is grown in between the polysilicon and CoSi2, the film stack can function as a nonvolatile one-time programmable memory cell. The cell is programmed when the SiO2 that insulates the doped polysilicon from the CoSi2 is broken down by applying a large biasing field, and unprogrammed when the antifuse is not broken down. By taking advantage of the ability to grow SiO2 directly on CoSi2, the entire device can made with only two masking steps and relatively simple tool set, while achieving high density. © 2003 American Institute of Physics.
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85.30.Hi Surface barrier, boundary, and point contact devices
85.30.Kk Junction diodes

Direct observation of lateral current spreading in ridge waveguide lasers using scanning voltage microscopy

D. Ban, E. H. Sargent, K. Hinzer, St. J. Dixon-Warren, A. J. SpringThorpe, and J. K. White

Appl. Phys. Lett. 82, 4166 (2003); http://dx.doi.org/10.1063/1.1581982 (3 pages) | Cited 8 times

Online Publication Date: 2 June 2003

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We report results of two-dimensional (2D) local voltage measurement of the transverse cross section of operating multiquantum-well ridge-waveguide (RWG) lasers. We observe lateral nonuniformity of local voltage in the n-cladding layers of the laser and attribute the voltage variation to 2D carrier transport effect within the RWG lasers. The quantitative evaluation of this effect indicates the local vertical current density to be ∼40% smaller at the edge of the ridge than at its center. Our results demonstrate the strength and application of scanning voltage microscopy technique in quantitatively delineating 2D current flow in operating optoelectronic devices. © 2003 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
07.79.-v Scanning probe microscopes and components
84.37.+q Measurements in electric variables (including voltage, current, resistance, capacitance, inductance, impedance, and admittance, etc.)
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)

Optimum channel thickness in pentacene-based thin-film transistors

Jiyoul Lee, Kibum Kim, Jae Hoon Kim, Seongil Im, and Duk-Young Jung

Appl. Phys. Lett. 82, 4169 (2003); http://dx.doi.org/10.1063/1.1580993 (3 pages) | Cited 49 times

Online Publication Date: 2 June 2003

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We report on the influence of pentacene channel thickness on the field-effect hole mobility in pentacene-based thin-film transistors (TFTs) that employ the top-contact mode for the source/drain electrodes. Our pentacene channel layers were deposited in the thickness range of 16–90 nm by thermal evaporation on 450 nm thick Al2O3+x dielectric films. The TFTs with increasingly thinner pentacene layers displayed correspondingly higher hole mobility, but an optimum thickness was determined to be about 30 nm because the TFTs with pentacene layers thinner than 30 nm exhibited high leakage current in the off-state bias regime. After a proper chemical treatment was performed onto the Al2O3+x gate dielectric, our optimized TFT with a 30 nm thick pentacene channel exhibited high mobility of ∼0.2 cm2/V s with an on/off current ratio of 105. © 2003 American Institute of Physics.
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85.30.Tv Field effect devices

Improved output coupling efficiency of a ZnS:Mn thin-film electroluminescent device with addition of a two-dimensional SiO2 corrugated substrate

Y. R. Do, Y.-C. Kim, S.-H. Cho, J.-H. Ahn, and J.-G. Lee

Appl. Phys. Lett. 82, 4172 (2003); http://dx.doi.org/10.1063/1.1581373 (3 pages) | Cited 20 times

Online Publication Date: 2 June 2003

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We present a study of the effects of adding a two-dimensional (2-D) SiO2 corrugated substrate onto a ZnS:Mn thin-film electroluminescence (EL) device on its EL properties. Two-step irradiated hologram lithography and reactive ion etching were used to fabricate a 2-D square-lattice-dotted pattern of SiO2 on the glass substrate. The addition of this corrugation leads to a 220% enhancement in the EL efficiency at 40 V above the threshold voltage under a 500-Hz sinusoidal excitation. This improvement in the output coupling efficiency is due to the diffraction scattering produced by the 2-D SiO2 periodic corrugations. © 2003 American Institute of Physics.
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85.60.Jb Light-emitting devices
78.66.Hf II-VI semiconductors
81.65.Cf Surface cleaning, etching, patterning
81.05.Dz II-VI semiconductors

Pentacene organic transistors and ring oscillators on glass and on flexible polymeric substrates

Hagen Klauk, Marcus Halik, Ute Zschieschang, Florian Eder, Günter Schmid, and Christine Dehm

Appl. Phys. Lett. 82, 4175 (2003); http://dx.doi.org/10.1063/1.1579870 (3 pages) | Cited 142 times

Online Publication Date: 2 June 2003

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We have fabricated organic thin film transistors, inverters, and ring oscillators on glass and on flexible polyethylene naphthalate, using the small-molecule hydrocarbon pentacene as the semiconductor and solution-processed polyvinylphenol as the gate dielectric. Depending on the choice of substrate, the transistors have a carrier mobility between 0.3 and 0.7 cm2/V s, an on/off current ratio between 105 and 106, and a subthreshold swing between 0.9 and 1.6 V/decade. To account for the positive switch-on voltage of the transistors, circuits were designed to operate with integrated level shifting. Depending on the type of substrate, ring oscillators have a signal propagation delay as low as 15 μs per stage. © 2003 American Institute of Physics.
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85.30.Tv Field effect devices
84.30.Ng Oscillators, pulse generators, and function generators
72.20.Fr Low-field transport and mobility; piezoresistance

Low-voltage organic electroluminescence device with an ultrathin, hybrid structure

Dirk Heithecker, Anis Kammoun, Thomas Dobbertin, Thomas Riedl, Eike Becker, Dirk Metzdorf, Daniel Schneider, Hans-Hermann Johannes, and Wolfgang Kowalsky

Appl. Phys. Lett. 82, 4178 (2003); http://dx.doi.org/10.1063/1.1582367 (3 pages) | Cited 17 times

Online Publication Date: 2 June 2003

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We have prepared organic light-emitting diodes with a narrow recombination zone confined by an organic double-heterojunction structure using both polymer and small molecules (a hybrid structure). In these light-emitting diodes, we used very thin small molecule layers, down to a total thickness of 40 nm, to achieve an exponential forward characteristic. These layers were evaporated on a highly conductive layer of PEDT:PSS for a high-yield process and for good charge injection at the anode. Although no doping processes were applied during device fabrication, either at the injecting electrodes or in the Alq3 layer, the diodes attained high brightness at very low voltage, for instance, 10.000 cd/m2 at voltage of 4.7 V. © 2003 American Institute of Physics.
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85.60.Jb Light-emitting devices
81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials
73.61.Ph Polymers; organic compounds
78.66.Qn Polymers; organic compounds
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths

Resonance acoustic field position sensor

Shuxiang Dong, Feiming Bai, Jie-Fang Li, and Dwight Viehland

Appl. Phys. Lett. 82, 4181 (2003); http://dx.doi.org/10.1063/1.1582355 (3 pages) | Cited 2 times

Online Publication Date: 2 June 2003

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An acoustic position sensor, based on a piezoelectric-sound-resonance cavity (PSRC), is reported in which a resonance acoustic field is used as the sensing mechanism. It has been discovered that an inserted object or an object motion in the sound radiation field results in changes in the resonance state of the PSRC. Experiments have demonstrated a high position resolution in the axial direction, and also good sensitivity in the transverse. © 2003 American Institute of Physics.
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06.60.Sx Positioning and alignment; manipulating, remote handling
43.38.Fx Piezoelectric and ferroelectric transducers
77.65.Fs Electromechanical resonance; quartz resonators
85.50.-n Dielectric, ferroelectric, and piezoelectric devices
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