APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

9 Jun 2003

Volume 82, Issue 23, pp. 4011-4195

Issue Cover Spotlight Figure

Appl. Phys. Lett. 82, 4160 (2003); http://dx.doi.org/10.1063/1.1580641 (3 pages)

Eva M. Höhberger, Tomas Krämer, Werner Wegscheider, and Robert H. Blick
Enlarge Image | Read More
Return to All Sections
back to top
RSS Feeds

Substrate effect on the crystal structure and ferroelectricity of low-temperature-deposited Pb(Zr, Ti)O3 thin films by metalorganic chemical vapor deposition

Kouji Tokita, Masanori Aratani, and Hiroshi Funakubo

Appl. Phys. Lett. 82, 4122 (2003); http://dx.doi.org/10.1063/1.1581975 (3 pages) | Cited 10 times

Online Publication Date: 2 June 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Tetragonal Pb(Zr0.35Ti0.65)O3 thin films were deposited at deposition temperatures ranging from 395 °C to 510 °C on (111)Pt/Ti/SiO2/Si, (111)Ir/TiO2/SiO2/Si, and (100)Ru/SiO2/Si substrates by metalorganic chemical vapor deposition. When the deposition temperature was above 415 °C, the remanent polarization (Pr) and the coercive field (Ec) were almost the same for the Pb(Zr0.35Ti0.65)O3 thin films deposited on these substrates. This means that the electrical properties were not significantly affected by the type of substrate above 415 °C. However, at 395 °C, the film deposited on the (111)Pt/Ti/SiO2/Si substrate showed a larger Pr value than those on the (111)Ir/TiO2/SiO2/Si and (100)Ru/SiO2/Si substrates. The lower crystallinity of the films deposited on the (111)Ir/TiO2/SiO2/Si and (100)Ru/SiO2/Si substrates, due to the oxidation of the Ir and Ru surfaces before starting film deposition, thwarts the attainment of good ferroelectricity. © 2003 American Institute of Physics.
Show PACS
77.55.-g Dielectric thin films
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
68.55.-a Thin film structure and morphology
77.80.-e Ferroelectricity and antiferroelectricity
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
61.66.Fn Inorganic compounds
77.22.Ej Polarization and depolarization

45° rotational epitaxy of SrTiO3 thin films on sulfide-buffered Si

Y.-Z. Yoo, P. Ahmet, Zheng-Wu Jin, K. Nakajima, T. Chikyow, M. Kawasaki, Y. Konishi, Y. Yonezawa, J. H. Song, and H. Koinuma

Appl. Phys. Lett. 82, 4125 (2003); http://dx.doi.org/10.1063/1.1581383 (3 pages) | Cited 7 times

Online Publication Date: 2 June 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Sulfide was employed as a buffer layer for the growth of SrTiO3 (STO) thin films on Si. In order to utilize a relationship of a 45° rotational lattice match between Si and STO, ZnS, with almost the same lattice constant as Si, was used as the buffer. The buffer layer showed a partially disordered region at the ZnS/Si interface, owing to steady interdiffusion between ZnS and Si. STO film on ZnS buffered Si showed the rotational epitaxy with respect to Si and sharp STO/ZnS interface. Propagation of stacking faults from the ZnS/Si interface was observed, but those plane defects were terminated at the rotational STO/ZnS interface, resulting in high-quality STO films. The dielectric constant of the STO/ZnS film was 34. © 2003 American Institute of Physics.
Show PACS
77.55.-g Dielectric thin films
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
61.72.Nn Stacking faults and other planar or extended defects
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.22.Ch Permittivity (dielectric function)
77.80.-e Ferroelectricity and antiferroelectricity

Different dynamic behaviors of Pb(Mg1/3Ta2/3)O3 and Ba(Mg1/3Ta2/3)O3 single crystals studied by micro-Brillouin scattering and dielectric spectroscopy

Jae-Hyeon Ko, Seiji Kojima, and S. G. Lushnikov

Appl. Phys. Lett. 82, 4128 (2003); http://dx.doi.org/10.1063/1.1582353 (3 pages) | Cited 22 times

Online Publication Date: 2 June 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Acoustic and dielectric properties of Pb(Mg1/3Ta2/3)O3 (PMT) and Ba(Mg1/3Ta2/3)O3 (BMT) single crystals with B-site disorder were obtained in a wide temperature range by micro-Brillouin scattering and dielectric spectroscopy. The temperature dependences of both the dielectric constant and the Brillouin shift of the longitudinal acoustic (LA) mode of BMT showed that there is no structural phase transition below 860 K, consistent with thermal expansion measurements. A low dielectric constant ϵ∼20 of BMT reflected the low-level flux contamination. PMT crystals showed frequency-dependent dielectric maximum, significant softening of the Brillouin shift of LA mode deviating from the high-temperature linear behavior. The temperature dependence of the maximum relaxation time could be obtained by combining dielectric and acoustic data, which followed the Vogel–Fulcher law with a freezing temperature of 119±6 K. This temperature coincides with that estimated from the frequency dependence of the temperature of the dielectric maximum, which is the evidence of the real freezing of the relaxation-time spectrum of PMT at a finite temperature. © 2003 American Institute of Physics.
Show PACS
77.80.-e Ferroelectricity and antiferroelectricity
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
78.35.+c Brillouin and Rayleigh scattering; other light scattering
77.22.Ch Permittivity (dielectric function)
65.40.De Thermal expansion; thermomechanical effects
Return to All Sections
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close