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9 Jun 2003

Volume 82, Issue 23, pp. 4011-4195

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Appl. Phys. Lett. 82, 4160 (2003); http://dx.doi.org/10.1063/1.1580641 (3 pages)

Eva M. Höhberger, Tomas Krämer, Werner Wegscheider, and Robert H. Blick
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Si dangling-bond-type defects at the interface of (100)Si with ultrathin HfO2

A. Stesmans and V. V. Afanas’ev

Appl. Phys. Lett. 82, 4074 (2003); http://dx.doi.org/10.1063/1.1579564 (3 pages) | Cited 45 times

Online Publication Date: 2 June 2003

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Electron spin resonance analysis of (100)Si/HfO2 interfaces prepared by chemical vapor deposition of the oxide using three chemically different precursors reveals that the trivalent Si defects common for Si/SiO2 interfaces—Pb0 and Pb1 centers—are universally observed upon hydrogen detachment. The density of the Pb0 is higher than in the (100)Si/SiO2 structures and is sensitive to the deposition process. However, the density can be significantly reduced by annealing of the Si/HfO2 structures in O-containing ambient, likely through re-establishing the Si/SiO2 interface. Also, the Pb-type centers can be entirely passivated by hydrogen already at 400 °C. The density of fast interface states closely follows the variations in the Pb0 center density, suggesting it as the dominant contribution to the fast interface states. © 2003 American Institute of Physics.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
76.30.Mi Color centers and other defects
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
61.72.Cc Kinetics of defect formation and annealing

Temperature dependence of carrier mobility in Si wafers measured by infrared photocarrier radiometry

Jerias Batista, Andreas Mandelis, and Derrick Shaughnessy

Appl. Phys. Lett. 82, 4077 (2003); http://dx.doi.org/10.1063/1.1582376 (3 pages) | Cited 29 times

Online Publication Date: 2 June 2003

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A recently introduced infrared photocarrier radiometry technique has been used to determine the temperature dependence of carrier mobility in Si wafers. In addition, its potential to determine simultaneously the carrier lifetime, diffusion coefficient, and surface recombination velocity is reported. This noncontact, nonintrusive, and all-optical technique relies on the detection of infrared radiation from harmonically excited free carriers (pure electronic diffusion-wave detection). Using a multiparameter fitting to a complete theory, the results showed that the lifetime increases with temperature, the diffusion coefficient decreases [D(T) ∼ T−1.5], and the temperature dependence of carrier mobility is μ(T) = (1.06±0.07)×109×T−2.49±0.01 cm2/V s. © 2003 American Institute of Physics.
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
72.80.Cw Elemental semiconductors
73.25.+i Surface conductivity and carrier phenomena
72.40.+w Photoconduction and photovoltaic effects
72.20.Fr Low-field transport and mobility; piezoresistance
07.60.Dq Photometers, radiometers, and colorimeters

Stimulated emission and ultrafast carrier relaxation in AlGaN/GaN multiple quantum wells

Ümit Özgür, Henry O. Everitt, Lei He, and Hadis Morkoç

Appl. Phys. Lett. 82, 4080 (2003); http://dx.doi.org/10.1063/1.1581385 (3 pages) | Cited 9 times

Online Publication Date: 2 June 2003

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Stimulated emission (SE) and ultrafast carrier relaxation dynamics were measured in two AlxGa1−xN/GaN multiple-quantum-well (MQW) structures, grown in a Ga-rich environment with x = 0.2 and 0.3, respectively. The threshold density for SE (Ith ≃ 100 μJ/cm2) was found to be independent of x. Room-temperature, time-resolved, differential transmission measurements mapped the carrier relaxation mechanisms for above barrier energy excitation. Photoexcited carriers are observed to relax into the QWs in <1 ps, while carrier recombination times as fast as 30 ps were measured. For excitation above Ith, SE is shown to deplete carriers in the barriers through a cascaded refilling of the QW state undergoing SE. Similar behavior is seen in an Al0.3Ga0.7N/GaN MQW grown with a N-rich atmosphere, but the relaxation phenomena of all AlGaN MQWs are significantly faster than observed in InGaN MQWs of similar structure. © 2003 American Institute of Physics.
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78.45.+h Stimulated emission
78.47.-p Spectroscopy of solid state dynamics
73.63.Hs Quantum wells
78.67.De Quantum wells
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Deep-defect-induced quenching effects in semi-insulating GaN layers detected by photoelectrical spectroscopic techniques

H. Witte, A. Krtschil, M. Lisker, E. Schrenk, J. Christen, A. Krost, B. Kuhn, and F. Scholz

Appl. Phys. Lett. 82, 4083 (2003); http://dx.doi.org/10.1063/1.1579556 (3 pages) | Cited 6 times

Online Publication Date: 2 June 2003

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Quenching effects induced by additional below-bandgap illumination in undoped semi-insulating GaN were investigated using optical admittance spectroscopy (OAS) and photocurrent (PC) spectroscopy as well as optically excited, thermally stimulated currents (TSC). In OAS and PC, a decrease of defect-related signals due to the quenching light was observed. The thermal quenching of the defect band between 2.7 and 3.3 eV shows a good agreement with thermal emissions as measured by TSC, indicating the same defects cause the optical transitions in OAS/PC and the thermal transitions in TSC. The thermal emission in the temperature region between 250 and 300 K, which is responsible for the thermal quenching of the blue band (BB) in OAS, also shows an optical quenching under below-bandgap excitation. © 2003 American Institute of Physics.
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72.40.+w Photoconduction and photovoltaic effects
77.22.Ej Polarization and depolarization
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
78.55.Cr III-V semiconductors
71.55.Eq III-V semiconductors
72.80.Ey III-V and II-VI semiconductors

Molecular oxygen and moisture as traps in poly[2-methoxy-5-(2′-ethylhexyloxy)-1,4-phenylene vinylene]: locations and detrapping by chain relaxation

Hao-En Tseng, Kang-Yung Peng, and Show-An Chen

Appl. Phys. Lett. 82, 4086 (2003); http://dx.doi.org/10.1063/1.1579557 (3 pages) | Cited 13 times

Online Publication Date: 2 June 2003

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We investigate locations of molecular oxygen and moisture (O2/H2O) serving as traps in poly[2-methoxy-5-(2′-ethylhexyloxy)-1,4-phenylene vinylene] (MEH-PPV) by measurements of field-induced thermally stimulated current, photoexcitation thermally stimulated current (PE-TSC), and dynamic mechanical analysis. Two broad peaks of PE-TSC are found at 212 and 325 K in the samples with O2/H2O-rich MEH-PPV, which are in reasonable agreement with those of the side chain and main chain relaxation, respectively. These traps can be attributed to the presence of O2/H2O (most likely molecular oxygen) in the side chain region and the amorphous main chain region, and the detrapping process is induced by chain motions under elevated temperatures. © 2003 American Institute of Physics.
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
77.22.Ej Polarization and depolarization

Non-volatile memory cells based on ZnxCd1−xS ferroelectric Schottky diodes

P. van der Sluis

Appl. Phys. Lett. 82, 4089 (2003); http://dx.doi.org/10.1063/1.1581365 (3 pages) | Cited 18 times

Online Publication Date: 2 June 2003

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Ferroelectric Schottky diodes were fabricated with n-type Zn0.4Cd0.6S. These devices show promising nonvolatile memory properties and the integration into complementary metal-oxide-semiconductor (CMOS) circuits seems feasible. So far, we have demonstrated on-resistances down to 100 Ω, on/off ratios up to 107, switching voltages below 100 mV, operating temperatures up to 180 °C, and switching times below 50 ns. The devices can be deposited at low temperatures (200 °C) by conventional rf-sputtering and survive the 30-min anneal at 400 °C in forming gas, which is mandatory in CMOS processing. © 2003 American Institute of Physics.
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85.50.Gk Non-volatile ferroelectric memories
85.30.Kk Junction diodes
61.72.Cc Kinetics of defect formation and annealing

Analysis of the transport process providing spin injection through an Fe/AlGaAs Schottky barrier

A. T. Hanbicki, O. M. J. van ’t Erve, R. Magno, G. Kioseoglou, C. H. Li, B. T. Jonker, G. Itskos, R. Mallory, M. Yasar, and A. Petrou

Appl. Phys. Lett. 82, 4092 (2003); http://dx.doi.org/10.1063/1.1580631 (3 pages) | Cited 191 times

Online Publication Date: 2 June 2003

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Electron-spin polarizations of 32% are obtained in a GaAs quantum well via electrical injection through a reverse-biased Fe/AlGaAs Schottky contact. An analysis of the transport data using the Rowell criteria demonstrates that single-step tunneling is the dominant transport mechanism. The current–voltage data show a clear zero-bias anomaly and phonon signatures corresponding to the GaAs-like and AlAs-like LO phonon modes of the AlGaAs barrier, providing further evidence for tunneling. These results provide experimental confirmation of several theoretical analyses, indicating that tunneling enables significant spin injection from a metal into a semiconductor. © 2003 American Institute of Physics.
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72.25.Mk Spin transport through interfaces
72.25.Hg Electrical injection of spin polarized carriers
73.30.+y Surface double layers, Schottky barriers, and work functions
73.43.Jn Tunneling
73.40.Ns Metal-nonmetal contacts
68.35.Ja Surface and interface dynamics and vibrations
78.60.Fi Electroluminescence
73.63.Hs Quantum wells
75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)

Realization of one-chip-multiple-wavelength laser diodes with II–VI/III–V compound semiconductors

J. S. Song, M. W. Cho, D. C. Oh, H. Makino, T. Hanada, T. Yao, B. P. Zhang, Y. Segawa, J. H. Chang, H. S. Song, I. S. Cho, H. W. Kim, and J. J. Jung

Appl. Phys. Lett. 82, 4095 (2003); http://dx.doi.org/10.1063/1.1578178 (3 pages) | Cited 2 times

Online Publication Date: 2 June 2003

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A laser diode which includes II–VI device structure directly grown on III–V device structure is proposed. This idea makes possible one-chip-multiple-wavelength operation in the visible wavelength region by the vertical integration of individual light emitters, which is demonstrated by a ZnCdSe/ZnSe/ZnMgBeSe quantum-well structure for a blue-green light emitter grown by molecular beam epitaxy directly on a metalorganic chemical vapor deposition grown InGaP/InGaAlP device wafer for a red light emitting device. The feasibility of the II–VI/III–V complex light emitter is demonstrated by optical-pumping experiments. Optically pumped lasing at 504 and 664 nm is achieved from II–VI and III–VI laser structures on one chip simultaneously at room temperature with a threshold power of 115 and 84 kW/cm2, respectively. The present results clearly show the feasibility of epitaxial integration of II–VI and III–V laser structures, which will stimulate the investigation of multifunctional optical devices. © 2003 American Institute of Physics.
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42.60.By Design of specific laser systems
78.67.De Quantum wells
78.66.Hf II-VI semiconductors
78.66.Fd III-V semiconductors
42.55.Px Semiconductor lasers; laser diodes
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.Kk Vapor phase epitaxy; growth from vapor phase
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