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9 Jun 2003

Volume 82, Issue 23, pp. 4011-4195

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Appl. Phys. Lett. 82, 4160 (2003); http://dx.doi.org/10.1063/1.1580641 (3 pages)

Eva M. Höhberger, Tomas Krämer, Werner Wegscheider, and Robert H. Blick
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Atomic hydrogen cleaning of polarized GaAs photocathodes

T. Maruyama, D.-A. Luh, A. Brachmann, J. E. Clendenin, E. L. Garwin, S. Harvey, R. E. Kirby, C. Y. Prescott, and R. Prepost

Appl. Phys. Lett. 82, 4184 (2003); http://dx.doi.org/10.1063/1.1581981 (3 pages) | Cited 2 times

Online Publication Date: 2 June 2003

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Atomic hydrogen cleaning followed by heat cleaning at 450 °C was used to prepare negative-electron-affinity GaAs photocathodes. When hydrogen ions were eliminated, quantum efficiencies of 15% were obtained for bulk GaAs cathodes, higher than the results obtained using conventional 600 °C heat cleaning. The low-temperature cleaning technique was applied to thin strained GaAs cathodes used for producing highly polarized electrons. No depolarization was observed even when the optimum cleaning time of about 30 s was extended by a factor of 100. © 2003 American Institute of Physics.
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81.65.Cf Surface cleaning, etching, patterning
81.05.Ea III-V semiconductors
85.60.Ha Photomultipliers; phototubes and photocathodes
68.47.Fg Semiconductor surfaces
79.60.Bm Clean metal, semiconductor, and insulator surfaces

Self-excited oscillatory dynamics of capillary bridges in electric fields

Anke Klingner, Stephan Herminghaus, and Frieder Mugele

Appl. Phys. Lett. 82, 4187 (2003); http://dx.doi.org/10.1063/1.1580995 (3 pages) | Cited 12 times

Online Publication Date: 2 June 2003

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We studied the stability of capillary bridges between flat, parallel, and dielectrically coated electrodes as a function of the voltage applied between them. The stability limits of the capillary bridge state and the state consisting of two separated droplets are shifted with respect to ordinary capillary hysteresis at zero voltage. Surprisingly, we found that the system can oscillate periodically between the two states within a certain range of applied voltage and electrode separation. These oscillations could be applied to promote mixing in electrowetting-based microfluidic devices. We present a model based on the balance between interfacial and electrostatic energies, which explains the experimental findings quantitatively. © 2003 American Institute of Physics.
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47.85.Np Fluidics
85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices
68.08.Bc Wetting

Coulomb explosion in femtosecond laser ablation of Si(111)

W. G. Roeterdink, L. B. F. Juurlink, O. P. H. Vaughan, J. Dura Diez, M. Bonn, and A. W. Kleyn

Appl. Phys. Lett. 82, 4190 (2003); http://dx.doi.org/10.1063/1.1580647 (3 pages) | Cited 27 times

Online Publication Date: 2 June 2003

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The ablation of ionized silicon is studied using near-infrared femtosecond laser pulses in the fluence regime from 1 to 9 J/cm2. Two major peaks are observed in the mass spectrum corresponding to Si+ and Si2+. In the time-of-flight transients of Si+, a bimodal structure is observed. The fast Si+ peak corresponds to a velocity half of that observed for Si2+. This momentum scaling is clearly indicative of a Coulomb explosion. © 2003 American Institute of Physics.
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79.20.Ds Laser-beam impact phenomena
61.82.Fk Semiconductors

Quantitative strain analysis in AlGaAs-based devices

Jens W. Tomm, Axel Gerhardt, Roland Müller, Mark L. Biermann, Joseph P. Holland, Dirk Lorenzen, and Eberhard Kaulfersch

Appl. Phys. Lett. 82, 4193 (2003); http://dx.doi.org/10.1063/1.1579567 (3 pages) | Cited 17 times

Online Publication Date: 2 June 2003

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We present a strategy for quantitative spectroscopic analysis of packaging-induced strain using both finite element analysis and band-structure calculations. This approach holds for a wide class of AlGaAs-based, and related, devices, among them high-power “cm-bars.” The influence on the results of particular device structure properties, such as intrinsic strain and quantum-well geometry, is analyzed. We compare theoretical results based on a unaxial stress model with photocurrent data obtained from an externally strained cm-bar, and obtain better agreement than from alternative strain models. The general approach is also applicable to the analysis of all data that refer to changes of the electronic band structure, such as absorption and photoluminescence. © 2003 American Institute of Physics.
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68.65.Fg Quantum wells
73.63.Hs Quantum wells
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
72.40.+w Photoconduction and photovoltaic effects
72.80.Ey III-V and II-VI semiconductors
78.55.Cr III-V semiconductors
02.70.Dh Finite-element and Galerkin methods
73.21.Fg Quantum wells
78.67.De Quantum wells
73.50.Pz Photoconduction and photovoltaic effects
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