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9 Jun 2003

Volume 82, Issue 23, pp. 4011-4195

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Appl. Phys. Lett. 82, 4160 (2003); http://dx.doi.org/10.1063/1.1580641 (3 pages)

Eva M. Höhberger, Tomas Krämer, Werner Wegscheider, and Robert H. Blick
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Electrical properties and transport in boron nitride nanotubes

M. Radosavljević, J. Appenzeller, V. Derycke, R. Martel, Ph. Avouris, A. Loiseau, J.-L. Cochon, and D. Pigache

Appl. Phys. Lett. 82, 4131 (2003); http://dx.doi.org/10.1063/1.1581370 (3 pages) | Cited 35 times

Online Publication Date: 2 June 2003

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We have fabricated electronic devices based on single-walled boron nitride nanotubes (BNNTs). Our measurements indicate that all BNNTs are semiconducting, and p-doped. Temperature dependence of two terminal transport experiments suggests that at low drain fields, transport is dominated by thermionic emission over 250–300 meV Schottky contact barriers. Gate-induced barrier modulation was observed in vertically scaled devices, resulting in field-effect transistor operation. © 2003 American Institute of Physics.
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85.35.Kt Nanotube devices
73.63.Fg Nanotubes
73.40.Ns Metal-nonmetal contacts

Large frequency dependence of lowered maximum dielectric constant temperature of LiTaO3 nanocrystals dispersed in mesoporous silicate

Shigemi Kohiki, Shinichiro Nogami, Shintaro Kawakami, Syozo Takada, Hirokazu Shimooka, Hiroyuki Deguchi, Masanori Mitome, and Masaoki Oku

Appl. Phys. Lett. 82, 4134 (2003); http://dx.doi.org/10.1063/1.1580991 (3 pages) | Cited 4 times

Online Publication Date: 2 June 2003

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A large frequency dependence of the maximum dielectric constant temperature was observed for LiTaO3 nanocrystals (the diameter ≈20 Å) dispersed in mesoporous silicate. At the applied field frequency of 100 kHz, the maximum temperatures in the real and imaginary parts were 365 and 345 °C, respectively. The maximum temperature in the real part is apparently lower than the paraelectric–ferroelectric transition temperature (645 °C) of bulk LiTaO3. The maximum temperature in the imaginary part rose from 285 to 420 °C with increasing frequency from 10 to 1000 kHz. Since the bulk LiTaO3 shows no relaxor behavior, such superparaelectric behavior is obviously a consequence of nanominiaturization of LiTaO3 crystal and insignificant cooperative interactions between the nanoparticles. © 2003 American Institute of Physics.
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77.84.Lf Composite materials
77.22.Ch Permittivity (dielectric function)

Low-temperature conductance measurements on single molecules

J. Reichert, H. B. Weber, M. Mayor, and H. v. Löhneysen

Appl. Phys. Lett. 82, 4137 (2003); http://dx.doi.org/10.1063/1.1574844 (3 pages) | Cited 63 times

Online Publication Date: 2 June 2003

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An experimental protocol which allows to perform conductance spectroscopy on organic molecules at low temperatures (T ≈ 30 K) has been developed. This extends the method of mechanically controlled break junctions which has recently demonstrated to be suitable to contact single molecules at room temperature. The conductance data obtained at low T with a conjugated sample molecule show a highly improved data quality with a higher stability, narrower linewidth, and substantially reduced noise. Thus, the comparability of experimental data with other measurements as well as with theoretical simulations is considerably improved. © 2003 American Institute of Physics.
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84.37.+q Measurements in electric variables (including voltage, current, resistance, capacitance, inductance, impedance, and admittance, etc.)
07.20.Mc Cryogenics; refrigerators, low-temperature detectors, and other low-temperature equipment
81.07.Nb Molecular nanostructures

Measurement of carbon nanotube–polymer interfacial strength

Asa H. Barber, Sidney R. Cohen, and H. Daniel Wagner

Appl. Phys. Lett. 82, 4140 (2003); http://dx.doi.org/10.1063/1.1579568 (3 pages) | Cited 135 times

Online Publication Date: 2 June 2003

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The force required to separate a carbon nanotube from a solid polymer matrix has been measured by performing reproducible nanopullout experiments using atomic force microscopy. The separation stress is found to be remarkably high, indicating that carbon nanotubes are effective at reinforcing a polymer. These results imply that the polymer matrix in close vicinity of the carbon nanotube is able to withstand stresses that would otherwise cause considerable yield in a bulk polymer specimen. © 2003 American Institute of Physics.
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68.35.Gy Mechanical properties; surface strains
62.25.-g Mechanical properties of nanoscale systems
68.37.Ps Atomic force microscopy (AFM)

Marangoni effect in nanosphere-enhanced laser nanopatterning of silicon

Y. Lu, S. Theppakuttai, and S. C. Chen

Appl. Phys. Lett. 82, 4143 (2003); http://dx.doi.org/10.1063/1.1581387 (3 pages) | Cited 26 times

Online Publication Date: 2 June 2003

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We report a Marangoni effect in nanosphere-enhanced laser direct nanopatterning of silicon surface. A monolayer of nanosphere array was formed on the silicon substrate by self-assembly. A 248-nm excimer laser was used to irradiate the sample surface. Due to optical field enhancement between the nanosphere and the substrate, the silicon surface was locally melted. The molten material was redistributed due to surface tension forces, resulting in the formation of a nanodent array. The morphology of the nanodents changed from bowl-type to “Sombrero” with increase of laser intensity as a result of a Marangoni effect that arises due to the competition between a thermocapillary force and a chemicapillary force acting on the molten material. © 2003 American Institute of Physics.
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81.16.Rf Micro- and nanoscale pattern formation
81.16.Dn Self-assembly
79.20.Ds Laser-beam impact phenomena
68.03.Cd Surface tension and related phenomena
61.82.Fk Semiconductors
68.35.Rh Phase transitions and critical phenomena
68.37.Hk Scanning electron microscopy (SEM) (including EBIC)

Efficient field emission from single crystalline indium oxide pyramids

Hongbo Jia, Ye Zhang, Xihong Chen, Jing Shu, Xuhui Luo, Zhensheng Zhang, and Dapeng Yu

Appl. Phys. Lett. 82, 4146 (2003); http://dx.doi.org/10.1063/1.1582354 (3 pages) | Cited 65 times

Online Publication Date: 2 June 2003

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Well-aligned indium oxide pyramids were synthesized on a Ni-coated silicon (100) substrate by a chemical vapor deposition. Scanning electron microscopy and x-ray diffraction investigations show that these pyramids present a tetragonal morphology and single-crystalline cubic bixbyite structure. The size control of the pyramids was achieved by varying the growth temperature. Field-emission characteristics of the as-grown indium oxide pyramids were measured. The field-emission current density of the nanopyramids (average size: ∼180 nm) reached about 1 mA/cm2 at a threshold field of about 6.0 V/μm, which is comparable to that of carbon nanotubes, and can guarantee sufficient luminescence brightness in a flat panel display. © 2003 American Institute of Physics.
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79.70.+q Field emission, ionization, evaporation, and desorption
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
61.46.-w Structure of nanoscale materials
68.55.-a Thin film structure and morphology

Evidence for trans-polyacetylene in nanocrystalline diamond films from H–D isotropic substitution experiments

R. Pfeiffer, H. Kuzmany, N. Salk, and B. Günther

Appl. Phys. Lett. 82, 4149 (2003); http://dx.doi.org/10.1063/1.1582352 (2 pages) | Cited 33 times

Online Publication Date: 2 June 2003

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Raman spectra of nanocrystalline diamond (NCD) films show a peak around 1140 cm−1 that is usually considered to be a fingerprint of a NCD phase in the sample. From recent studies, it was suggested that this line is due to trans-polyacetylene in the films. We present Raman spectra of deuterated NCD films produced from a D2/CD4/Ar plasma. In these spectra, the 1140 cm−1 mode has disappeared and a peak at 860 cm−1 has emerged. The downshift of the peak at 1140 cm−1 is taken as a proof for its origin from trans-polyacetylene. © 2003 American Institute of Physics.
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78.66.Sq Composite materials
78.66.Qn Polymers; organic compounds
78.30.Jw Organic compounds, polymers
78.35.+c Brillouin and Rayleigh scattering; other light scattering

Growth of Si nanocrystals on alumina and integration in memory devices

T. Baron, A. Fernandes, J. F. Damlencourt, B. De Salvo, F. Martin, F. Mazen, and S. Haukka

Appl. Phys. Lett. 82, 4151 (2003); http://dx.doi.org/10.1063/1.1577409 (3 pages) | Cited 24 times

Online Publication Date: 2 June 2003

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We present a detailed study of the growth of Si quantum dots (Si QDs) by low pressure chemical vapor deposition on alumina dielectric deposited by atomic layer deposition. The Si QDs density is very high, 1012 cm−2, for a mean diameter between 5 and 10 nm. Al2O3/Si QD stacks have been integrated in memory devices as granular floating gate. The devices demonstrate good charge storage and data retention characteristics. © 2003 American Institute of Physics.
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81.07.Bc Nanocrystalline materials
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.07.Ta Quantum dots
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
84.30.Sk Pulse and digital circuits
68.65.Hb Quantum dots (patterned in quantum wells)
61.46.-w Structure of nanoscale materials

Growth and optical properties of GaN/AlN quantum wells

C. Adelmann, E. Sarigiannidou, D. Jalabert, Y. Hori, J.-L. Rouvière, B. Daudin, S. Fanget, C. Bru-Chevallier, T. Shibata, and M. Tanaka

Appl. Phys. Lett. 82, 4154 (2003); http://dx.doi.org/10.1063/1.1581386 (3 pages) | Cited 45 times

Online Publication Date: 2 June 2003

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We demonstrate the growth of GaN/AlN quantum-well structures by plasma-assisted molecular-beam epitaxy by taking advantage of the surfactant effect of Ga. The GaN/AlN quantum wells show photoluminescence emission with photon energies in the range between 4.2 and 2.3 eV for well widths between 0.7 and 2.6 nm, respectively. An internal electric field strength of 9.2±1.0 MV/cm is deduced from the dependence of the emission energy on the well width. © 2003 American Institute of Physics.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
81.07.St Quantum wells
78.67.De Quantum wells
78.55.Cr III-V semiconductors
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