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9 Jun 2003

Volume 82, Issue 23, pp. 4011-4195

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Appl. Phys. Lett. 82, 4160 (2003); http://dx.doi.org/10.1063/1.1580641 (3 pages)

Eva M. Höhberger, Tomas Krämer, Werner Wegscheider, and Robert H. Blick
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Is Cu60Ti10Zr30 a bulk glass-forming alloy?

J. Z. Jiang, J. Saida, H. Kato, T. Ohsuna, and A. Inoue

Appl. Phys. Lett. 82, 4041 (2003); http://dx.doi.org/10.1063/1.1581001 (3 pages) | Cited 44 times

Online Publication Date: 2 June 2003

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The microstructures of Cu60Ti10Zr30 alloys fabricated by using two different methods, (rods of 2.5 mm in diameter prepared by a copper-mold casting method, and ribbons of about 0.03 mm in thickness prepared by the melt-spinning method), have been investigated by transmission electron microscopy and high-resolution transmission electron microscopy. Surprisingly, we found that the alloy in both geometries contains cubic nanometer-sized crystals of about 5–7 nm in diameter with a lattice parameter of 0.45 nm for ribbons and 7–15 nm in diameter with a lattice parameter of 0.42 nm for rods. Nanocrystals with a significant volume fraction are randomly distributed in the amorphous matrix. The copper element is enriched in nanocrystals while a slightly high zirconium content is found in the matrix. We classify that the Cu60Ti10Zr30 alloy prepared by both of the aforementioned methods is a nanocomposite: Nanocrystals embedded in an amorphous matrix. © 2003 American Institute of Physics.
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61.46.-w Structure of nanoscale materials
81.07.Bc Nanocrystalline materials
81.20.-n Methods of materials synthesis and materials processing

Structures of nitrided Si(001) surfaces: First-principles theoretical study

Shin’ichi Higai and Takahisa Ohno

Appl. Phys. Lett. 82, 4044 (2003); http://dx.doi.org/10.1063/1.1580639 (3 pages) | Cited 2 times

Online Publication Date: 2 June 2003

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First-principles theoretical calculations for nitrided Si(001) surfaces are presented. We examined the structure and stability of ordered nitrided surfaces with various coverages of N and H atoms. For the 2×2 ordered reconstruction observed in very recent experiments, we propose a structural model, where N atoms are adsorbed into Si dimer centers and also into back bonds, and those in the dimer centers are dimerized. We also discuss the nitridation process. © 2003 American Institute of Physics.
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68.35.B- Structure of clean surfaces (and surface reconstruction)
68.43.Fg Adsorbate structure (binding sites, geometry)
81.65.Lp Surface hardening: nitridation, carburization, carbonitridation

Parameters of wires during electric explosion

S. I. Tkachenko, V. S. Vorob’ev, and S. P. Malyshenko

Appl. Phys. Lett. 82, 4047 (2003); http://dx.doi.org/10.1063/1.1580996 (3 pages) | Cited 10 times

Online Publication Date: 2 June 2003

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We use the nucleation theory of electric explosion of wire to estimate wire parameters at the explosion for a wide range of experimental conditions. We analyze a number of the major parameters including the limit value of energy deposited during the initial resistive phase of the explosion and discuss the correspondence of these results to previously published experimental data. © 2003 American Institute of Physics.
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52.80.Qj Explosions; exploding wires

Orientation control of poly(vinylidenefluoride-trifluoroethylene) crystals and molecules using atomic force microscopy

Kuniko Kimura, Kei Kobayashi, Hirofumi Yamada, Toshihisa Horiuchi, Kenji Ishida, and Kazumi Matsushige

Appl. Phys. Lett. 82, 4050 (2003); http://dx.doi.org/10.1063/1.1581974 (3 pages) | Cited 21 times

Online Publication Date: 2 June 2003

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We have developed an aligning technique for polymer crystals and molecular chains utilizing contact-mode atomic force microscopy (AFM). We have aligned lamellar crystals and molecular chains of poly(vinylidenefluoride-trifluoroethylene) thin films. By scanning the film surface using an AFM cantilever tip at the temperature range of 70–100 °C, we aligned the crystals to the scan direction. Moreover, we successfully aligned the molecular chains to the scan direction by scanning at a higher temperature (135 °C). The aligned chains subsequently formed large lamellar crystals, which were still ferroelectric. © 2003 American Institute of Physics.
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61.41.+e Polymers, elastomers, and plastics
68.55.-a Thin film structure and morphology
81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials
68.37.Ps Atomic force microscopy (AFM)
36.20.-r Macromolecules and polymer molecules
77.80.-e Ferroelectricity and antiferroelectricity
77.84.Jd Polymers; organic compounds
77.55.-g Dielectric thin films
07.79.Lh Atomic force microscopes

Oxygen vacancy ordering in epitaxial layers of yttrium oxide on Si (001)

A. Travlos, N. Boukos, G. Apostolopoulos, and A. Dimoulas

Appl. Phys. Lett. 82, 4053 (2003); http://dx.doi.org/10.1063/1.1581985 (3 pages) | Cited 19 times

Online Publication Date: 2 June 2003

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The origin of the superstructure observed in epitaxial yttrium oxide (Y2O3) layers on Si (001) is determined by electron energy loss spectroscopy (EELS). The oxygen K edge is measured both in the superstructure and a defect-free region of the Y2O3 layers and they are compared to EELS spectra obtained from bulk stoichiometric and reduced Y2O3. It is shown that as a result of the epitaxial growth, oxygen vacancies order into a superstructure creating nonstoichiometric regions in an otherwise stoichiometric Y2O3 layer. Furthermore, it is shown that oxygen deficiency introduces a change of the density of states of the lower conduction band of Y2O3. © 2003 American Institute of Physics.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
61.72.J- Point defects and defect clusters
61.66.Bi Elemental solids
61.66.Dk Alloys
79.20.Uv Electron energy loss spectroscopy

Photoluminescence of a superficial Si nanolayer and an example of its use

M. Ley, V. Svrcek, and Z. T. Kuznicki

Appl. Phys. Lett. 82, 4056 (2003); http://dx.doi.org/10.1063/1.1581984 (3 pages) | Cited 3 times

Online Publication Date: 2 June 2003

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A characteristic photoluminescence of a superficial Si nanolayer realized by ion implantation has been observed. This effect, being totally independent of those shown recently for a nanoscale Si-layered system, is similar to that produced by Si nanocrystals (Si nc). To visualize the nature and give evidence of this effect, we fabricated samples in two different ways: (i) by incorporation of Si nc into thin SiO2 films deposited on Si wafer by the spin-on-glass method and (ii) by a nanoscale superficial crystalline-Si modification using medium-energy ion implantation and thermal treatment. In both cases the UV-to-red light conversion has been observed to be independent of wafer post-implantation damage. To show the UV-to-red conversion contribution, we use the ion modified superficial Si layer with its well-defined potential barrier, the so-called carrier collection limit. Such a modified Si structure gives us a method of deconvoluting several optoelectronic features observed experimentally on modified Si. The practical realization is compatible with well-established Si technology. © 2003 American Institute of Physics.
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78.55.Ap Elemental semiconductors
78.67.Bf Nanocrystals, nanoparticles, and nanoclusters
81.05.Cy Elemental semiconductors
81.07.Bc Nanocrystalline materials
71.20.Mq Elemental semiconductors
78.66.Db Elemental semiconductors and insulators
61.46.-w Structure of nanoscale materials
61.72.up Other materials
61.80.Jh Ion radiation effects
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
85.40.Ry Impurity doping, diffusion and ion implantation technology

Optical phonon spectra of GaP nanoparticles prepared by nanochemistry

F. S. Manciu, Y. Sahoo, D. J. MacRae, M. Furis, B. D. McCombe, and P. N. Prasad

Appl. Phys. Lett. 82, 4059 (2003); http://dx.doi.org/10.1063/1.1580635 (3 pages) | Cited 3 times

Online Publication Date: 2 June 2003

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Gallium phosphide (GaP) nanoparticles have been synthesized by colloidal nanochemistry with two different surfactants: trioctylphosphine oxide and dodecylamine. Transverse optical (bulk) and surface optical phonons associated with the GaP nanoparticles were observed and studied experimentally by infrared transmission spectroscopy of a solid dispersion of these nanoparticles in cesium iodide pellets. These vibrational properties of the nanoparticles were used to obtain information about the crystallinity and surface interactions. The crystallinity and the stoichiometry of the samples were also examined and characterized by transmission electron microscopy, electron diffraction, and energy dispersive x-ray spectroscopy. © 2003 American Institute of Physics.
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63.22.-m Phonons or vibrational states in low-dimensional structures and nanoscale materials
78.67.Bf Nanocrystals, nanoparticles, and nanoclusters
78.30.Hv Other nonmetallic inorganics
81.07.Bc Nanocrystalline materials
68.37.Lp Transmission electron microscopy (TEM)

Periodical poling characteristics of congruent MgO:LiNbO3 crystals at elevated temperature

Hideki Ishizuki, Ichiro Shoji, and Takunori Taira

Appl. Phys. Lett. 82, 4062 (2003); http://dx.doi.org/10.1063/1.1582371 (3 pages) | Cited 32 times

Online Publication Date: 2 June 2003

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A structure for quasi-phase matching of large cross section using 5 mol % MgO-doped LiNbO3 (MgO:LN) crystal for high-power wavelength conversion was realized. We have found that the coercive field to invert polarization of the crystal reduces drastically with elevated temperature. The coercive field reduces to 1.2 kV/mm at 250 °C, which is about 1/4 compared with that for MgO:LN at room temperature (RT) and about 1/17 of that for LN at RT. 3 mm thick periodically poled MgO:LN has been fabricated with 30 μm period. © 2003 American Institute of Physics.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
77.22.Ej Polarization and depolarization
77.80.-e Ferroelectricity and antiferroelectricity
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates

Midinfrared continuous-wave photoluminescence of lead–salt structures up to temperatures of 190 °C

M. Böberl, W. Heiss, T. Schwarzl, K. Wiesauer, and G. Springholz

Appl. Phys. Lett. 82, 4065 (2003); http://dx.doi.org/10.1063/1.1582370 (3 pages) | Cited 21 times

Online Publication Date: 2 June 2003

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Continuous-wave photoluminescence in the midinfrared for PbSe/PbEuSe and PbTe/PbEuTe multiquantum well structures as well as for PbSe and PbTe bulklike structures, excited by a semiconductor laser diode, is investigated. All samples are grown by molecular-beam epitaxy on BaF2(111) substrates under the same growth conditions. Both for the Te-based systems and for the Se-based systems, it turns out that bulklike structures show photoluminescence up to higher temperatures than multiquantum well structures. In particular, emission spectra from PbTe/PbEuTe multiquantum wells are obtained up to temperatures of 200 K and from PbSe/PbEuSe multiquantum well structures up to 60 °C whereas for bulklike PbSe photoluminescence at temperatures as high as 190 °C is demonstrated. © 2003 American Institute of Physics.
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78.55.Hx Other solid inorganic materials
78.67.De Quantum wells
78.66.Li Other semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Experimental evidence of polarization dependence in the optical response of opal-based photonic crystals

J. F. Galisteo-Lopez, F. López-Tejeira, S. Rubio, C. López, and J. Sánchez-Dehesa

Appl. Phys. Lett. 82, 4068 (2003); http://dx.doi.org/10.1063/1.1582379 (3 pages) | Cited 30 times

Online Publication Date: 2 June 2003

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We report angle resolved reflectivity measurements showing the polarization dependence of the pseudogap in artificial opals. This kind of photonic crystals consist of silica spheres ordered in a face-centered-cubic lattice. The analyzed gap originates from the (111) family of planes. It is shown that the width of the Bragg peak observed in the reflectance spectra follows the bands determining the pseudogap, which are selectively excited according to the polarization (s or p) of the light impinging on the opal. Moreover, it is found that the coupling of light with the photonic bands occurs according to their predicted symmetry, which was assigned by arguments based on group theory. © 2003 American Institute of Physics.
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42.70.Qs Photonic bandgap materials
42.25.Ja Polarization
78.20.-e Optical properties of bulk materials and thin films

High-resolution near-field spectroscopy investigation of GaN laterally overgrown structures on SiC

F. Hitzel, A. Hangleiter, S. Miller, A. Weimar, G. Brüderl, A. Lell, and V. Härle

Appl. Phys. Lett. 82, 4071 (2003); http://dx.doi.org/10.1063/1.1580997 (3 pages)

Online Publication Date: 2 June 2003

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We investigated epitaxial lateral overgrown GaN structures with different wing tilt using a spectroscopic scanning near-field optical microscope (spectroscopic SNOM), which takes a complete optical spectrum at each point of a sample surface. From these measurements, we obtain information about strain at different points of the surface, and comparing emission intensity between regions of lateral growth and vertical growth, we directly see the efficiency of defect density reduction. For the high wing-tilt sample, an increased defect density at the window–wing interface could be identified. © 2003 American Institute of Physics.
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68.55.-a Thin film structure and morphology
68.37.Uv Near-field scanning microscopy and spectroscopy
68.60.Bs Mechanical and acoustical properties
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