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16 Jun 2003

Volume 82, Issue 24, pp. 4215-4390

Issue Cover Spotlight Figure

Appl. Phys. Lett. 82, 4322 (2003); http://dx.doi.org/10.1063/1.1582366 (3 pages)

Hongwei Qu, Wei Yao, T. Garcia, Jiandi Zhang, A. V. Sorokin, S. Ducharme, P. A. Dowben, and V. M. Fridkin
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Barrier heights of Schottky contacts on strained AlGaN/GaN heterostructures: Determination and effect of metal work functions

Zhaojun Lin, Wu Lu, Jaesun Lee, Dongmin Liu, Jeffrey S. Flynn, and George R. Brandes

Appl. Phys. Lett. 82, 4364 (2003); http://dx.doi.org/10.1063/1.1584077 (3 pages) | Cited 33 times

Online Publication Date: 10 June 2003

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Ir, Ni, and Re Schottky contacts on strained Al0.25Ga0.75N/GaN heterostructures are characterized using capacitance–voltage (C–V) and I–V techniques. Based on the measured C–V characteristics, two dimensional electron gas sheet carrier concentrations at the AlGaN/GaN interface and barrier heights of Ir, Ni, and Re Schottky contacts are calculated. The barrier heights of 1.12, 1.27, and 1.68 eV are obtained for Ir, Ni, and Re Schottky contacts, respectively. The results show that the barrier heights of Schottky contacts on strained AlGaN/GaN heterostructures are strongly dependent on the metal work functions. However, contrary to Schottky contacts on bulk AlGaN or GaN, the barrier height on strained AlGaN/GaN heterostructures is lower for a Schottky contact with a higher metal work function. This is attributed to the stronger wave function coupling between electrons in the Schottky metal and surface donor electrons. The I–V characteristics for Ir, Ni, and Re Schottky contacts confirm the results obtained by C–V characteristics. © 2003 American Institute of Physics.
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73.30.+y Surface double layers, Schottky barriers, and work functions
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.40.Ns Metal-nonmetal contacts

Temperature dependence on current–voltage characteristics of nickel/diamond Schottky diodes on high quality boron-doped homoepitaxial diamond film

Y. G. Chen, M. Ogura, and H. Okushi

Appl. Phys. Lett. 82, 4367 (2003); http://dx.doi.org/10.1063/1.1583868 (3 pages) | Cited 15 times

Online Publication Date: 10 June 2003

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Ni/diamond Schottky diodes were fabricated on boron-doped homoepitaxial diamond films. Temperature dependence on electrical characteristics of the Schottky diodes was investigated in a temperature range 148 to ∼448 K. The current–voltage characteristics of the diodes show excellent rectification behavior. Temperature dependence on the ideality factor and apparent barrier height was determined, including the effect of series resistance. The evaluated ideality factor was observed to decrease from 1.78 to 1.05, while the apparent barrier height increased from 0.95 to 1.55 eV in this temperature range. The temperature dependence of the forward characteristics can be well explained by thermionic-field-emission theory at low temperature and thermionic emission theory at high temperature, respectively. A possible mechanism of the correlation of the ideality factor and barrier height has been proposed. © 2003 American Institute of Physics.
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85.30.Kk Junction diodes

Quality assessment of CuInS2-based solar cells by Raman scattering

E. Rudigier, I. Luck, and R. Scheer

Appl. Phys. Lett. 82, 4370 (2003); http://dx.doi.org/10.1063/1.1582362 (3 pages) | Cited 17 times

Online Publication Date: 10 June 2003

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In this work spectroscopic features of the Raman A1 mode of CuInS2 thin films are investigated. A broadening of the A1 mode in combination with an asymmetry towards larger wave numbers is observed. The comparison with parameters of the solar cells formed out of these thin films reveal a direct correlation between the linewidth of the A1 mode and the solar cell data. A significant decrease of open circuit voltage and fill factor of the cells is found for linewidths larger than 3.8 cm−1. For linewidths smaller than 3.8 cm−1, a saturated behavior of the solar cell parameters is observed. This saturation indicates other origins of performance limitation to be present in CuInS2 based devices. © 2003 American Institute of Physics.
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84.60.Jt Photoelectric conversion
78.30.Hv Other nonmetallic inorganics
78.66.Li Other semiconductors

Flexible organic field-effect transistors fabricated by the electrode-peeling transfer with an assist of self-assembled monolayer

Katsuhiko Fujita, Takeshi Yasuda, and Tetsuo Tsutsui

Appl. Phys. Lett. 82, 4373 (2003); http://dx.doi.org/10.1063/1.1583867 (3 pages) | Cited 8 times

Online Publication Date: 10 June 2003

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We propose a way to fabricate a flexible organic field-effect transistor: an electrode-peeling transfer method. In this method, source–drain metal electrodes were formed finely on rigid temporary substrate, where a micropatterning process such as photolithography is applicable. The electrodes were treated with an alkane thiol to form a self-assembled monolayer followed by complete covering of the temporary substrate via chemical vapor deposition of an organic dielectric layer. After the gate electrode was deposited on the top, the multilayer of the source–drain electrodes/dielectric layer/gate electrode was peeled off from the temporary substrate by an adhesive Scotch tape substrate without deletion. The peeling-transfer was completed with an assist of a self-assembled monolayer as a connecting buffer layer between the electrodes and the dielectric layer. Any organic semiconductor materials can be deposited on freshly peeled-off surface of the flexible substrate. In the present case, pentacene was used as the semiconductor material. It showed a hole mobility exceeding 0.1 cm2/V s even after the substrate was rolled. © 2003 American Institute of Physics.
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85.30.Tv Field effect devices
85.65.+h Molecular electronic devices
85.40.Hp Lithography, masks and pattern transfer
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
72.20.Fr Low-field transport and mobility; piezoresistance
73.50.Dn Low-field transport and mobility; piezoresistance

Theory of avalanche multiplication and excess noise in quantum-well infrared photodetectors

Harald Schneider

Appl. Phys. Lett. 82, 4376 (2003); http://dx.doi.org/10.1063/1.1585134 (3 pages) | Cited 9 times

Online Publication Date: 10 June 2003

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A theoretical treatment of the noise current of quantum-well infrared photodetectors in the presence of avalanche multiplication is presented. Avalanche multiplication results in a characteristic excess noise which is expressed as a function of the avalanche multiplication factor and the capture probability. The multiplication factor can thus be determined from the photoconductive gain and the noise gain. © 2003 American Institute of Physics.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
72.20.Ht High-field and nonlinear effects
72.40.+w Photoconduction and photovoltaic effects
72.70.+m Noise processes and phenomena
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Acoustic waves generated by a laser line pulse in a transversely isotropic cylinder

Y. Pan, C. Rossignol, and B. Audoin

Appl. Phys. Lett. 82, 4379 (2003); http://dx.doi.org/10.1063/1.1583135 (3 pages) | Cited 14 times

Online Publication Date: 10 June 2003

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The acoustic field of a homogeneous and transversely isotropic cylinder generated by a laser line pulse in either ablation or thermoelastic regime is obtained theoretically. A two-dimensional Fourier transform is used to calculate the acoustic displacement at the cylinder surface. Experimental and theoretical normal displacements under either regime are obtained and compared for aluminum cylinders. Very good agreements are observed in the time, shape, and relative amplitude (i) of the cylindrical Rayleigh waves with different roundtrips and (ii) of the various longitudinal and transverse bulk waves propagating through the cylinder or reflected at the free circular surface. © 2003 American Institute of Physics.
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43.35.Ud Thermoacoustics, high temperature acoustics, photoacoustic effect
43.35.Pt Surface waves in solids and liquids

Microscopic mechanisms of ablation and micromachining of dielectrics by using femtosecond lasers

T. Q. Jia, Z. Z. Xu, X. X. Li, R. X. Li, B. Shuai, and F. L. Zhao

Appl. Phys. Lett. 82, 4382 (2003); http://dx.doi.org/10.1063/1.1583857 (3 pages) | Cited 25 times

Online Publication Date: 10 June 2003

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We report measurements of damage threshold and ablation depth for SiO2 and CaF2 irradiated under lasers at wavelengths of 800 and 400 nm for duration of 45–800 fs. These results can be well understood by using a developed avalanche model. The model includes the production of conduction band electrons (CBEs), laser energy deposition, and CBE diffusion. The evolution of microexplosion is investigated based on this model. © 2003 American Institute of Physics.
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79.20.Ds Laser-beam impact phenomena
81.65.-b Surface treatments
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
61.82.Ms Insulators
81.20.Wk Machining, milling
72.40.+w Photoconduction and photovoltaic effects
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
06.60.Jn High-speed techniques (microsecond to femtosecond)
42.65.Re Ultrafast processes; optical pulse generation and pulse compression

Wavelength selection with coupled surface plasmon waves

Yu Wang

Appl. Phys. Lett. 82, 4385 (2003); http://dx.doi.org/10.1063/1.1582357 (3 pages) | Cited 14 times

Online Publication Date: 10 June 2003

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A process by which optical wavelengths can be selected by changing coupling distance of two surface plasmon waves is reported. When two surface plasmon waves are excited at metal/air/metal interfaces, coupling of the two surface plasmon waves will only allow a range of certain wavelengths to transmit. This wavelength selection depends on thickness of the air gap, and it does not have repeated passbands at harmonics. This phenomenon can be used to build broad-range tunable filters and spectrometers. Experiment showed the peak transmission wavelength could be continuously tuned from 400 to 900 nm with different voltages. © 2003 American Institute of Physics.
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78.67.Pt Multilayers; superlattices; photonic structures; metamaterials
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
73.21.Ac Multilayers
78.68.+m Optical properties of surfaces
42.79.Wc Optical coatings
42.65.-k Nonlinear optics
42.79.Ci Filters, zone plates, and polarizers

CuO-doped SnO2 thin films as hydrogen sulfide gas sensor

Atul Khanna, Rajesh Kumar, and S. S. Bhatti

Appl. Phys. Lett. 82, 4388 (2003); http://dx.doi.org/10.1063/1.1584071 (3 pages) | Cited 34 times

Online Publication Date: 10 June 2003

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CuO-loaded SnO2 element was earlier identified as a highly sensitive and selective H2S gas sensor. A number of techniques have been used by different authors for preparing thick and thin films of SnO2 doped with CuO, which among various metal oxides has outstanding promoter action for the sensitive detection of H2S by SnO2. Here we report the growth and characterization of CuO-doped SnO2 thin films by a thermal evaporation technique. These thin films show an extremely high sensitivity of ∼ 106 to few parts per million levels of H2S gas in air. The gas sensor is characterized at four operating temperatures and its long-term stability in response to H2S gas is tested over a period of 3 years. © 2003 American Institute of Physics.
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07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
81.05.Hd Other semiconductors
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