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16 Jun 2003

Volume 82, Issue 24, pp. 4215-4390

Issue Cover Spotlight Figure

Appl. Phys. Lett. 82, 4322 (2003); http://dx.doi.org/10.1063/1.1582366 (3 pages)

Hongwei Qu, Wei Yao, T. Garcia, Jiandi Zhang, A. V. Sorokin, S. Ducharme, P. A. Dowben, and V. M. Fridkin
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Nanoscale polarization manipulation and conductance switching in ultrathin films of a ferroelectric copolymer

Hongwei Qu, Wei Yao, T. Garcia, Jiandi Zhang, A. V. Sorokin, S. Ducharme, P. A. Dowben, and V. M. Fridkin

Appl. Phys. Lett. 82, 4322 (2003); http://dx.doi.org/10.1063/1.1582366 (3 pages) | Cited 39 times

Online Publication Date: 10 June 2003

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We report the direct observation of induced molecular reorientation on a ferroelectric copolymer with a scanning tunneling microscope (STM). Ultrathin copolymer films of vinylidene fluoride (70%) with trifluoroethylene (30%) revealed a quasihexagonal close-packing structure with long-range polymer chain ordering. By flipping the polarity of the STM tip bias voltage, a reversal of local polarization was observed through an apparent lattice shift and was accompanied by an asymmetric “diode-like” character in tunneling current I(V). These results clearly demonstrated conductance switching behavior on nanoscale with local polarization reversal. © 2003 American Institute of Physics.
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77.84.Jd Polymers; organic compounds
77.55.-g Dielectric thin films
77.22.Ej Polarization and depolarization
77.80.Fm Switching phenomena
68.55.-a Thin film structure and morphology

Ferroelectric properties of (Ba0.5Sr0.5)TiO3/Pb(Zr0.52Ti0.48)O3/ (Ba0.5Sr0.5)TiO3 thin films with platinum electrodes

Feng Yan, Yening Wang, Helen L. W. Chan, and Chung Loong Choy

Appl. Phys. Lett. 82, 4325 (2003); http://dx.doi.org/10.1063/1.1583137 (3 pages) | Cited 17 times

Online Publication Date: 10 June 2003

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Multilayered Pt/(Ba0.5Sr0.5)TiO3/Pb(Zr0.52Ti0.48)O3/(Ba0.5Sr0.5)TiO3/Pt (BST/PZT/BST) thin films with different thicknesses of the BST layers were prepared by the pulsed-laser deposition method. The existence of a BST layer between the PZT and Pt electrode can greatly improve the fatigue properties of the PZT film. However, the heterostructure with thicker BST layers exhibits lower remnant polarization because of a lower electric field applied on the PZT layer. So, the thickness of BST layers should be decreased to decrease the working voltage of the multilayered film. A heterostructure with very thin BST layers (thickness ∼7.5 nm) has good ferroelectric properties, such as high remnant polarization and rare fatigue resistance after 1010 switching cycles. A possible reason for the effect of BST is that the BST layer can absorb oxygen vacancies or other point defects from the PZT layer and greatly improve its fatigue properties. © 2003 American Institute of Physics.
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77.80.-e Ferroelectricity and antiferroelectricity
77.55.-g Dielectric thin films
81.15.Fg Pulsed laser ablation deposition
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates

Supercritical carbon dioxide extraction of porogens for the preparation of ultralow-dielectric-constant films

T. Rajagopalan, B. Lahlouh, J. A. Lubguban, N. Biswas, S. Gangopadhyay, J. Sun, D. H. Huang, S. L. Simon, A. Mallikarjunan, H.-C. Kim, W. Volksen, M. F. Toney, E. Huang, P. M. Rice, E. Delenia, et al.

Appl. Phys. Lett. 82, 4328 (2003); http://dx.doi.org/10.1063/1.1583139 (3 pages) | Cited 12 times

Online Publication Date: 10 June 2003

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Supercritical carbon dioxide extraction of poly(propylene glycol) porogen from poly(methylsilsesquioxane) (PMSSQ) cured to temperatures adequate to initiate matrix condensation, but still below the decomposition temperature of the porogen, is demonstrated to produce nanoporous, ultralow-dielectric-constant thin films. Both closed and open cell porous structures were prepared simply by varying the porogen load in the organic/inorganic hybrid films. 25 and 55 wt % porogen loads were investigated in the present work. Structural characterization of the samples conducted using transmission electron microscope, small angle x-ray scattering, and Fourier transform infrared spectroscopy, confirms the extraction of the porogen from the PMSSQ matrix at relatively low temperatures (⩽200 °C). The standard thermal decomposition process is performed at much higher temperatures (typically in the range of 400 °C–450 °C). The values of dielectric constants and refractive indices measured are in good agreement with the structural properties of these samples. © 2003 American Institute of Physics.
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68.55.-a Thin film structure and morphology
77.55.-g Dielectric thin films
81.05.Rm Porous materials; granular materials
77.22.Ch Permittivity (dielectric function)
77.84.Jd Polymers; organic compounds
61.43.Gt Powders, porous materials
61.46.-w Structure of nanoscale materials
82.30.Lp Decomposition reactions (pyrolysis, dissociation, and fragmentation)
78.66.Qn Polymers; organic compounds
81.07.Pr Organic-inorganic hybrid nanostructures

Effects of interfacial nitrogen on the structural and electrical properties of ultrathin ZrO2 gate dielectrics on partially strain-compensated SiGeC/Si heterolayers

R. Mahapatra, S. Maikap, Je-Hun Lee, G. S. Kar, A. Dhar, Nong-M. Hwang, Doh-Y. Kim, B. K. Mathur, and S. K. Ray

Appl. Phys. Lett. 82, 4331 (2003); http://dx.doi.org/10.1063/1.1583143 (3 pages) | Cited 3 times

Online Publication Date: 10 June 2003

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The interfacial characteristics of high-κ ZrO2 on O2 and N2O-plasma-treated Si0.69Ge0.3C0.01 surfaces have been investigated using secondary ion mass spectroscopy and x-ray photoelectron spectroscopy. N2O-plasma-treated films show the formation of a nitrogen-rich Zr–germano–silicate interfacial layer between the deposited ZrO2 and SiGeC films. The N-treated film has a higher accumulation capacitance (∼1200 pF), lower leakage current density (7×10−9 A/cm2−1 V), higher breakdown field (∼11 MV/cm), and higher interfacial layer dielectric constant (∼10) than that of the non-nitrogen-treated films. Relatively lower positive trap charge generated by a constant current stressing in N-incorporated dielectric films makes it attractive for scaled metal–oxide–semiconductor field-effect transistor applications. © 2003 American Institute of Physics.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
77.55.-g Dielectric thin films
77.22.Ch Permittivity (dielectric function)
68.55.-a Thin film structure and morphology
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
79.60.Jv Interfaces; heterostructures; nanostructures
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