APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

16 Jun 2003

Volume 82, Issue 24, pp. 4215-4390

Issue Cover Spotlight Figure

Appl. Phys. Lett. 82, 4322 (2003); http://dx.doi.org/10.1063/1.1582366 (3 pages)

Hongwei Qu, Wei Yao, T. Garcia, Jiandi Zhang, A. V. Sorokin, S. Ducharme, P. A. Dowben, and V. M. Fridkin
Enlarge Image | Read More
Return to All Sections
back to top
RSS Feeds

High-conductivity n-AlGaN with high Al mole fraction grown by metalorganic vapor phase deposition

M. Pophristic, S. P. Guo, and B. Peres

Appl. Phys. Lett. 82, 4289 (2003); http://dx.doi.org/10.1063/1.1582377 (3 pages) | Cited 8 times

Online Publication Date: 10 June 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Highly-conductive and crack-free n-Al0.6Ga0.4N films with thickness up to 1 μm were achieved by using high-temperature AlN or AlGaN/AlN superlattice (SL) buffer layers. Room-temperature Hall measurements show the highest electron concentration of 3.5×1018 cm−3 with mobility of 25 cm2/V s. Electron mobility was increased from 25 to 35 cm2/V s by introducing the AlGaN/AlN SL buffer layer. Second ion mass spectroscopy indicates that there is high oxygen doping concentration in the film, and that the film resistivity decreases with increasing oxygen concentration from 1×1017 to ∼ 1×1019 cm−3. © 2003 American Institute of Physics.
Show PACS
73.61.Ey III-V semiconductors
81.05.Ea III-V semiconductors
81.15.Kk Vapor phase epitaxy; growth from vapor phase
68.55.A- Nucleation and growth
72.80.Ey III-V and II-VI semiconductors
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
73.50.Dn Low-field transport and mobility; piezoresistance

Photocurrent noise in multi-quantum-well infrared photodetectors

A. Carbone, R. Introzzi, and H. C. Liu

Appl. Phys. Lett. 82, 4292 (2003); http://dx.doi.org/10.1063/1.1581388 (3 pages) | Cited 8 times

Online Publication Date: 10 June 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We report on photocurrent noise in AlGaAs/GaAs quantum-well infrared photodetectors having nominally the same design, except the number of wells N. The power spectral density does not scale as the inverse of the number of wells N in the presence of infrared radiation. These features can be understood by taking into account the nonlinearity arising at high infrared power as a consequence of the nonuniform potential distribution through the quantum-well structure. © 2003 American Institute of Physics.
Show PACS
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
85.60.Gz Photodetectors (including infrared and CCD detectors)
73.50.Td Noise processes and phenomena
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
73.50.Pz Photoconduction and photovoltaic effects

Epitaxial colossal magnetoresistive La0.67(Sr,Ca)0.33MnO3 films on Si

J.-H. Kim, S. I. Khartsev, and A. M. Grishin

Appl. Phys. Lett. 82, 4295 (2003); http://dx.doi.org/10.1063/1.1583133 (3 pages) | Cited 30 times

Online Publication Date: 10 June 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
La0.67(Sr,Ca)0.33MnO3 (LSCMO) films have been grown by a pulsed-laser deposition technique on Si(001) substrates buffered with Bi4Ti3O12/CeO2/yttrium-stabilized zirconia (YSZ) heteroepitaxial layers. X-ray diffraction has revealed cube-on-cube growth of an epitaxial Bi4Ti3O12/CeO2/YSZ/Si heterostructure whereas the LSCMO layer grows in the “diagonal-on-side” manner on top of the Bi4Ti3O12 (BTO) template. The maximum temperature coefficient of resistivity (TCR)=4.4% K−1 and colossal magnetoresistance (CMR) Δρ/ρ∼2.9% kOe−1 have been reached at 294 K. This was achieved due to the successive improvement of c-axis orientation of the layers: Full widths at half-maximum 0.65°, 0.58°, 0.65°, 1.13°, and 0.18° in LSCMO/BTO/CeO2/YSZ/Si stack, respectively. As a prototype of an uncooled bolometer, heteroepitaxial CMR structure on Si demonstrates, at 294 K, the noise equivalent temperature difference of 1.2 μK/√Hz@30 Hz. © 2003 American Institute of Physics.
Show PACS
73.61.Le Other inorganic semiconductors
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
75.47.Lx Magnetic oxides
75.47.Gk Colossal magnetoresistance
68.55.A- Nucleation and growth
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
85.60.Gz Photodetectors (including infrared and CCD detectors)
72.80.Jc Other crystalline inorganic semiconductors
81.05.Hd Other semiconductors
81.15.Fg Pulsed laser ablation deposition
73.50.Dn Low-field transport and mobility; piezoresistance

First-principles study of n-type dopants and their clustering in SiC

R. Rurali, P. Godignon, J. Rebollo, E. Hernández, and P. Ordejón

Appl. Phys. Lett. 82, 4298 (2003); http://dx.doi.org/10.1063/1.1583870 (3 pages) | Cited 11 times

Online Publication Date: 10 June 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We report the results of an ab initio study of N and P dopants in SiC. We find that while N substitutes most favorably at a C lattice site, P does so preferably at a Si site, except in n-doping and Si-rich 3C-SiC. Furthermore, we consider a series of dopant complexes that could form in high-dose implantation, in order to investigate the dopant activation behavior in this limit. We find that all N complexes considered lead to passivation through the formation of a deep level. For P, the most stable aggregate is still an active dopant, while passivation is only observed for complexes with a higher formation energy. We discuss how these results could help in the understanding of the observed experimental high-dose doping and codoping behavior of these species. © 2003 American Institute of Physics.
Show PACS
61.72.up Other materials
71.55.Ht Other nonmetals
61.72.S- Impurities in crystals
61.80.Jh Ion radiation effects

Enhancement of Schottky barrier height on AlGaN/GaN heterostructure by oxidation annealing

Chang Min Jeon and Jong-Lam Lee

Appl. Phys. Lett. 82, 4301 (2003); http://dx.doi.org/10.1063/1.1583140 (3 pages) | Cited 19 times

Online Publication Date: 10 June 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The effect of preannealing of AlGaN under an oxygen ambient on the improvement of the Schottky barrier height on an AlGaN/GaN heterostructure was studied using synchrotron radiation photoemission spectroscopy. The oxidation annealing increased the Schottky barrier height from 0.59 to 0.84 eV, and dramatically reduced the reverse leakage current. The group-III elements (Ga, Al) outdiffused to the surface to form group-III oxides during the annealing, leaving group-III vacancies behind. The surface Fermi level shifted to the energy levels of group-III vacancies, leading to the enhancement of Schottky properties of AlGaN. © 2003 American Institute of Physics.
Show PACS
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.30.+y Surface double layers, Schottky barriers, and work functions
81.65.Mq Oxidation
61.72.Cc Kinetics of defect formation and annealing
79.60.Jv Interfaces; heterostructures; nanostructures
61.72.J- Point defects and defect clusters

Metal–oxide–semiconductor devices using Ga2O3 dielectrics on n-type GaN

Ching-Ting Lee, Hong-Wei Chen, and Hsin-Ying Lee

Appl. Phys. Lett. 82, 4304 (2003); http://dx.doi.org/10.1063/1.1584520 (3 pages) | Cited 52 times

Online Publication Date: 10 June 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Using a photoelectrochemical method involving a He–Cd laser, Ga2O3 oxide layers were directly grown on n-type GaN. We demonstrated the performance of the resultant metal–oxide–semiconductor devices based on the grown Ga2O3 layer. An extremely low reverse leakage current of 200 pA was achieved when devices operated at −20 V. Furthermore, high forward and reverse breakdown electric fields of 2.80 MV/cm and 5.70 MV/cm, respectively, were obtained. Using a photoassisted current–voltage method, a low interface state density of 2.53×1011 cm−2 eV−1 was estimated. The varactor devices permit formation of inversion layers, so that they may be applied for the fabrication of metal–oxide–semiconductor field-effect transistors. © 2003 American Institute of Physics.
Show PACS
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
84.32.Tt Capacitors
73.61.Ey III-V semiconductors
81.65.Mq Oxidation
77.22.Jp Dielectric breakdown and space-charge effects
81.05.Ea III-V semiconductors
73.20.At Surface states, band structure, electron density of states
Return to All Sections
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close