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16 Jun 2003

Volume 82, Issue 24, pp. 4215-4390

Issue Cover Spotlight Figure

Appl. Phys. Lett. 82, 4322 (2003); http://dx.doi.org/10.1063/1.1582366 (3 pages)

Hongwei Qu, Wei Yao, T. Garcia, Jiandi Zhang, A. V. Sorokin, S. Ducharme, P. A. Dowben, and V. M. Fridkin
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Acoustic waves generated by a laser line pulse in a transversely isotropic cylinder

Y. Pan, C. Rossignol, and B. Audoin

Appl. Phys. Lett. 82, 4379 (2003); http://dx.doi.org/10.1063/1.1583135 (3 pages) | Cited 14 times

Online Publication Date: 10 June 2003

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The acoustic field of a homogeneous and transversely isotropic cylinder generated by a laser line pulse in either ablation or thermoelastic regime is obtained theoretically. A two-dimensional Fourier transform is used to calculate the acoustic displacement at the cylinder surface. Experimental and theoretical normal displacements under either regime are obtained and compared for aluminum cylinders. Very good agreements are observed in the time, shape, and relative amplitude (i) of the cylindrical Rayleigh waves with different roundtrips and (ii) of the various longitudinal and transverse bulk waves propagating through the cylinder or reflected at the free circular surface. © 2003 American Institute of Physics.
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43.35.Ud Thermoacoustics, high temperature acoustics, photoacoustic effect
43.35.Pt Surface waves in solids and liquids

Microscopic mechanisms of ablation and micromachining of dielectrics by using femtosecond lasers

T. Q. Jia, Z. Z. Xu, X. X. Li, R. X. Li, B. Shuai, and F. L. Zhao

Appl. Phys. Lett. 82, 4382 (2003); http://dx.doi.org/10.1063/1.1583857 (3 pages) | Cited 25 times

Online Publication Date: 10 June 2003

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We report measurements of damage threshold and ablation depth for SiO2 and CaF2 irradiated under lasers at wavelengths of 800 and 400 nm for duration of 45–800 fs. These results can be well understood by using a developed avalanche model. The model includes the production of conduction band electrons (CBEs), laser energy deposition, and CBE diffusion. The evolution of microexplosion is investigated based on this model. © 2003 American Institute of Physics.
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79.20.Ds Laser-beam impact phenomena
81.65.-b Surface treatments
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
61.82.Ms Insulators
81.20.Wk Machining, milling
72.40.+w Photoconduction and photovoltaic effects
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
06.60.Jn High-speed techniques (microsecond to femtosecond)
42.65.Re Ultrafast processes; optical pulse generation and pulse compression

Wavelength selection with coupled surface plasmon waves

Yu Wang

Appl. Phys. Lett. 82, 4385 (2003); http://dx.doi.org/10.1063/1.1582357 (3 pages) | Cited 14 times

Online Publication Date: 10 June 2003

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A process by which optical wavelengths can be selected by changing coupling distance of two surface plasmon waves is reported. When two surface plasmon waves are excited at metal/air/metal interfaces, coupling of the two surface plasmon waves will only allow a range of certain wavelengths to transmit. This wavelength selection depends on thickness of the air gap, and it does not have repeated passbands at harmonics. This phenomenon can be used to build broad-range tunable filters and spectrometers. Experiment showed the peak transmission wavelength could be continuously tuned from 400 to 900 nm with different voltages. © 2003 American Institute of Physics.
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78.67.Pt Multilayers; superlattices; photonic structures; metamaterials
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
73.21.Ac Multilayers
78.68.+m Optical properties of surfaces
42.79.Wc Optical coatings
42.65.-k Nonlinear optics
42.79.Ci Filters, zone plates, and polarizers

CuO-doped SnO2 thin films as hydrogen sulfide gas sensor

Atul Khanna, Rajesh Kumar, and S. S. Bhatti

Appl. Phys. Lett. 82, 4388 (2003); http://dx.doi.org/10.1063/1.1584071 (3 pages) | Cited 34 times

Online Publication Date: 10 June 2003

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CuO-loaded SnO2 element was earlier identified as a highly sensitive and selective H2S gas sensor. A number of techniques have been used by different authors for preparing thick and thin films of SnO2 doped with CuO, which among various metal oxides has outstanding promoter action for the sensitive detection of H2S by SnO2. Here we report the growth and characterization of CuO-doped SnO2 thin films by a thermal evaporation technique. These thin films show an extremely high sensitivity of ∼ 106 to few parts per million levels of H2S gas in air. The gas sensor is characterized at four operating temperatures and its long-term stability in response to H2S gas is tested over a period of 3 years. © 2003 American Institute of Physics.
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07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
81.05.Hd Other semiconductors
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