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16 Jun 2003

Volume 82, Issue 24, pp. 4215-4390

Issue Cover Spotlight Figure

Appl. Phys. Lett. 82, 4322 (2003); http://dx.doi.org/10.1063/1.1582366 (3 pages)

Hongwei Qu, Wei Yao, T. Garcia, Jiandi Zhang, A. V. Sorokin, S. Ducharme, P. A. Dowben, and V. M. Fridkin
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Bistable chiral-splay nematic liquid crystal device using horizontal switching

Seo Hern Lee, Kyoung-Ho Park, Tae-Hoon Yoon, and Jae Chang Kim

Appl. Phys. Lett. 82, 4215 (2003); http://dx.doi.org/10.1063/1.1581368 (3 pages) | Cited 35 times

Online Publication Date: 10 June 2003

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The bistability in a chiral-splay nematic liquid crystal cell, which is obtained by adding a chiral additive to a splay cell, is proposed. In this letter, we describe a horizontal way of switching between the two states of the bistable chiral-splay cell, one state being characterized by a nontwisted director field with splay, the second state showing a director-field with 180° twist. The optimization of the various parameters of the device is described. © 2003 American Institute of Physics.
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42.79.Kr Display devices, liquid-crystal devices
61.30.Eb Experimental determinations of smectic, nematic, cholesteric, and other structures

Nonvolatile two-color holographic recording in nondoped near-stoichiometric lithium tantalate crystals with continuous-wave lasers

Youwen Liu, Kenji Kitamura, Shunji Takekawa, Masaru Nakamura, Yasunori Furukawa, and Hideki Hatano

Appl. Phys. Lett. 82, 4218 (2003); http://dx.doi.org/10.1063/1.1583136 (3 pages) | Cited 10 times

Online Publication Date: 10 June 2003

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Nonvolatile holograms have been recorded in nondoped near-stoichiometric LiTaO3 crystals by use of a near infrared (IR) laser for writing and a ultraviolet beam as a gating source. This material exhibits good overall two-color holographic recording characteristics including a high sensitivity of 0.086 cm/J with a gating intensity of 1 W/cm2 at 350 nm, a large refractive index change of as much as 1×10−4, a high resistance to IR erasure, and a long hologram lifetime of five years. The sensitivity can be further enhanced using writing and gating beams of a shorter wavelength without sacrificing readout nonvolatility. © 2003 American Institute of Physics.
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42.40.Ht Hologram recording and readout methods
42.40.Eq Holographic optical elements; holographic gratings
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Quantum cascade lasers grown by metalorganic vapor phase epitaxy

J. S. Roberts, R. P. Green, L. R. Wilson, E. A. Zibik, D. G. Revin, J. W. Cockburn, and R. J. Airey

Appl. Phys. Lett. 82, 4221 (2003); http://dx.doi.org/10.1063/1.1583858 (3 pages) | Cited 13 times

Online Publication Date: 10 June 2003

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We report the growth of GaAs-based quantum cascade lasers using atmospheric pressure metalorganic vapor phase epitaxy. The necessary control of interface abruptness and layer thickness uniformity throughout the structure has been achieved using a horizontal reactor in combination with individually purged vent/run valves. A low-temperature threshold current density of 10 kA/cm2 and maximum operating temperature of 140 K have been measured. These performance levels are comparable with early GaAs-based devices grown using molecular-beam epitaxy. The measured emission wavelength (λ ∼ 11.8 μm) is approximately 3-μm longer than the calculated transition wavelength, which we explain using a model incorporating compositional grading of the active region barriers. © 2003 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
81.15.Kk Vapor phase epitaxy; growth from vapor phase
68.35.Ct Interface structure and roughness
81.05.Ea III-V semiconductors

White organic light-emitting devices using a phosphorescent sensitizer

Gang Cheng, Feng Li, Yu Duan, Jing Feng, Shiyong Liu, Song Qiu, Dong Lin, Yuguang Ma, and S. T. Lee

Appl. Phys. Lett. 82, 4224 (2003); http://dx.doi.org/10.1063/1.1584075 (3 pages) | Cited 72 times

Online Publication Date: 10 June 2003

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The efficiency of white organic light-emitting devices has been improved dramatically by the introduction of a phosphorescent material, fac tris (2-phenylpyridine) iridium [Ir(ppy)3] as a sensitizer. Ir(ppy)3 and 4-(dicyanomethylene)-2-t-butyl-6-(1,1,7,7-tetramethyljulolidyl-9-enyl) are codoped into 4,4′-N,N′-dicarbazole-biphenyl (CBP) host. The chromaticity of white emission can be tuned by adjusting the thickness of the codoped CBP layer or the concentration of Ir(ppy)3. The luminance efficiency of these devices is affected at the same time due to the severe difference in efficiency between the two primary emission peaks. © 2003 American Institute of Physics.
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85.60.Jb Light-emitting devices

Experimental synthesis of fiber Bragg gratings using optical low coherence reflectometry

Xavier Chapeleau, Dominique Leduc, Cyril Lupi, Roger Le Ny, Marc Douay, Pierre Niay, and Christian Boisrobert

Appl. Phys. Lett. 82, 4227 (2003); http://dx.doi.org/10.1063/1.1584090 (3 pages) | Cited 6 times

Online Publication Date: 10 June 2003

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We apply a combination of optical low coherence reflectometry and a layer-peeling method to the synthesis of a fiber grating. The index modulation amplitude we obtain is compared with a Krug measurement result and the dc refractive index is derived from the phase measurement. © 2003 American Institute of Physics.
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42.79.Dj Gratings
42.81.Bm Fabrication, cladding, and splicing
42.81.Wg Other fiber-optical devices

Second-harmonic generation in two-dimensional periodically poled lithium niobate using second-order quasiphase matching

Peigen Ni, Boqin Ma, Xuehua Wang, Bingying Cheng, and Daozhong Zhang

Appl. Phys. Lett. 82, 4230 (2003); http://dx.doi.org/10.1063/1.1579856 (3 pages) | Cited 32 times

Online Publication Date: 10 June 2003

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Two-dimensional nonlinear photonic crystals of lithium niobate with square lattices were fabricated. In these crystals, efficient quasiphase-matched second-harmonic generation was demonstrated by using second-order quasiphase matching. As a mode-locked Nd:yttritium–aluminum–garnet laser at 1064 nm with 35 ps pulse was used, we obtained an average power of 0.86 mW at 532 nm with 2.73 mW input, which corresponds to 42% internal conversion efficiency. The variations of second-harmonic output with crystal temperature and incident angle were measured. In addition, the relation between the second-harmonic output and reversed duty cycle was studied. All the experimental results are well consistent with simulations. © 2003 American Institute of Physics.
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42.70.Qs Photonic bandgap materials
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation

Submicron periodically poled flux-grown KTiOPO4

C. Canalias, V. Pasiskevicius, R. Clemens, and F. Laurell

Appl. Phys. Lett. 82, 4233 (2003); http://dx.doi.org/10.1063/1.1583144 (3 pages) | Cited 20 times

Online Publication Date: 10 June 2003

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A submicron domain grating has been created in a bulk ferroelectric. Electron-beam lithography and electric-field poling were used to fabricate the 800 nm period grating in a 0.5-mm-thick flux-grown KTiOPO4 sample. The domain structure was characterized with an atomic force microscope and was used to demonstrate electrically amplitude adjustable Bragg reflections. © 2003 American Institute of Physics.
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77.80.Dj Domain structure; hysteresis
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
81.10.Dn Growth from solutions
77.22.Ej Polarization and depolarization
68.37.Ps Atomic force microscopy (AFM)

Gain switching of an external cavity grating-coupled surface emitting laser with wide tunability

Y. Hu, A. Gubenko, G. Venus, I. Gadjiev, N. Il’inskaja, S. Nesterov, E. Portnoi, M. Dubov, and I. Khrushchev

Appl. Phys. Lett. 82, 4236 (2003); http://dx.doi.org/10.1063/1.1584521 (2 pages) | Cited 3 times

Online Publication Date: 10 June 2003

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Gain-switched, single frequency operation of an external cavity grating-coupled surface emitting laser with a wavelength tuning range of 100 nm is presented. A short pulse duration of 41 ps and a high peak power of 0.88 W have been obtained. © 2003 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.60.Fc Modulation, tuning, and mode locking
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
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