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16 Jun 2003

Volume 82, Issue 24, pp. 4215-4390

Issue Cover Spotlight Figure

Appl. Phys. Lett. 82, 4322 (2003); http://dx.doi.org/10.1063/1.1582366 (3 pages)

Hongwei Qu, Wei Yao, T. Garcia, Jiandi Zhang, A. V. Sorokin, S. Ducharme, P. A. Dowben, and V. M. Fridkin
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High-coercivity ultralight transparent magnets

M. Gich, Ll. Casas, A. Roig, E. Molins, J. Sort, S. Suriñach, M. D. Baró, J. S. Muñoz, L. Morellon, M. R. Ibarra, and J. Nogués

Appl. Phys. Lett. 82, 4307 (2003); http://dx.doi.org/10.1063/1.1578538 (3 pages) | Cited 8 times

Online Publication Date: 10 June 2003

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Magnetic silica-aerogel composites have been synthesized by dispersing hard magnetic Nd2Fe14B particles in a sol during a fast sol-gel process and subsequently supercritically drying the resulting gels. The composites are found to retain most of the outstanding properties of their constituents: the large coercivity and moderate remanence of the magnetic powders and the transparency and low density of silica aerogels. Moreover, aerogels synthesized in the presence of a magnetic field exhibit the alignment of the particles, forming needle-like structures along the direction of the applied magnetic field, which results in optical and magnetic anisotropies. Due to their unique combination of properties, these types of materials may be appealing for magneto-optics and magnetic actuator applications. © 2003 American Institute of Physics.
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81.10.Dn Growth from solutions
81.10.Fq Growth from melts; zone melting and refining
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
75.50.Tt Fine-particle systems; nanocrystalline materials
81.05.Mh Cermets, ceramic and refractory composites
75.50.Vv High coercivity materials
82.70.Gg Gels and sols
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
75.30.Gw Magnetic anisotropy
75.50.Bb Fe and its alloys

In1−xMnxSb—a narrow-gap ferromagnetic semiconductor

T. Wojtowicz, G. Cywiński, W. L. Lim, X. Liu, M. Dobrowolska, J. K. Furdyna, K. M. Yu, W. Walukiewicz, G. B. Kim, M. Cheon, X. Chen, S. M. Wang, and H. Luo

Appl. Phys. Lett. 82, 4310 (2003); http://dx.doi.org/10.1063/1.1583142 (3 pages) | Cited 33 times

Online Publication Date: 10 June 2003

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A narrow-gap ferromagnetic In1−xMnxSb semiconductor alloy was grown by low-temperature molecular-beam epitaxy on CdTe/GaAs hybrid substrates. Ferromagnetic order in In1−xMnxSb was unambiguously established by the observation of clear hysteresis loops both in direct magnetization measurements and in the anomalous Hall effect, with Curie temperatures TC ranging up to 8.5 K. The observed values of TC agree well with the existing models of carrier-induced ferromagnetism. © 2003 American Institute of Physics.
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75.70.Ak Magnetic properties of monolayers and thin films
75.50.Pp Magnetic semiconductors
75.50.Dd Nonmetallic ferromagnetic materials
81.05.Ea III-V semiconductors
68.55.A- Nucleation and growth
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
72.20.My Galvanomagnetic and other magnetotransport effects
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
75.30.Kz Magnetic phase boundaries (including classical and quantum magnetic transitions, metamagnetism, etc.)
75.40.-s Critical-point effects, specific heats, short-range order

Sensitive detection of irreversible switching in a single FePt nanosized dot

N. Kikuchi, S. Okamoto, O. Kitakami, Y. Shimada, and K. Fukamichi

Appl. Phys. Lett. 82, 4313 (2003); http://dx.doi.org/10.1063/1.1580994 (3 pages) | Cited 37 times

Online Publication Date: 10 June 2003

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Magnetization of an isolated single dot as small as 60 nm in diameter fabricated from a single crystal L10-FePt(001) film has been measured by detection of the anomalous Hall effect in the temperature range from 10 to 300 K. Over the whole temperature range, the dots with diameter ranging from 60 nm to 12 μm exhibit perfect rectangular magnetization loops with coercivity almost constant regardless of the very large difference in diameter. The activation energy has been evaluated to be about 4×10−19 J, equivalent to the domain-wall energy times the square of the domain-wall thickness, suggesting that the magnetization reversals are initiated by nucleation of reversed embryo with the dimension of the exchange length. © 2003 American Institute of Physics.
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75.50.Tt Fine-particle systems; nanocrystalline materials
75.50.Bb Fe and its alloys
75.60.Jk Magnetization reversal mechanisms
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
75.70.Kw Domain structure (including magnetic bubbles and vortices)
75.30.Et Exchange and superexchange interactions
75.47.Np Metals and alloys

Experimental probing of the anisotropy of the empty p states near the Fermi level in MgB2

R. F. Klie, Y. Zhu, G. Schneider, and J. Tafto

Appl. Phys. Lett. 82, 4316 (2003); http://dx.doi.org/10.1063/1.1583132 (3 pages) | Cited 10 times

Online Publication Date: 10 June 2003

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We have studied the boron K edge in the superconductor MgB2 by electron energy loss spectroscopy (EELS) and experimentally resolved the empty p states at the Fermi level that have previously been observed within an energy window of 0.8 eV by soft x-ray absorption spectroscopy. Using angular-resolved EELS, we find that these states at the immediate edge onset have pxy character in agreement with predictions from first-principle electronic structure calculations. © 2003 American Institute of Physics.
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74.25.Jb Electronic structure (photoemission, etc.)
74.70.Ad Metals; alloys and binary compounds (including A15, MgB2, etc.)

Thickness dependence of the properties of epitaxial MgB2 thin films grown by hybrid physical-chemical vapor deposition

A. V. Pogrebnyakov, J. M. Redwing, J. E. Jones, X. X. Xi, S. Y. Xu, Qi Li, V. Vaithyanathan, and D. G. Schlom

Appl. Phys. Lett. 82, 4319 (2003); http://dx.doi.org/10.1063/1.1583852 (3 pages) | Cited 56 times

Online Publication Date: 10 June 2003

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We have studied the effect of deposition rate and layer thickness on the properties of epitaxial MgB2 thin films grown by hybrid physical-chemical vapor deposition on 4H-SiC substrates. The MgB2 film deposition rate depends linearly on the concentration of B2H6 in the inlet gas mixture. We found that the superconducting and normal-state properties of the MgB2 films are determined by the film thickness, not by the deposition rate. When the film thickness was increased, the transition temperature Tc increased and the residual resistivity ρ0 decreased. Above 3000 Å, a Tc of 41.8 K, a ρ0 of 0.28 μΩ cm, and a residual resistance ratio RRR of over 30 were obtained. © 2003 American Institute of Physics.
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74.70.Ad Metals; alloys and binary compounds (including A15, MgB2, etc.)
74.78.-w Superconducting films and low-dimensional structures
74.62.Yb Other effects
74.25.F- Transport properties
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
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