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23 Jun 2003

Volume 82, Issue 25, pp. 4411-4611

Issue Cover Spotlight Figure

Appl. Phys. Lett. 82, 4322 (2003); http://dx.doi.org/10.1063/1.1582366 (3 pages)

Hongwei Qu, Wei Yao, T. Garcia, Jiandi Zhang, A. V. Sorokin, S. Ducharme, P. A. Dowben, and V. M. Fridkin
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Very-long wave ternary antimonide superlattice photodiode with 21 μm cutoff

E. H. Aifer, E. M. Jackson, G. Boishin, L. J. Whitman, I. Vurgaftman, J. R. Meyer, J. C. Culbertson, and B. R. Bennett

Appl. Phys. Lett. 82, 4411 (2003); http://dx.doi.org/10.1063/1.1584518 (3 pages) | Cited 14 times

Online Publication Date: 16 June 2003

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We describe a ternary antimonide superlattice photodiode with a 21 μm cutoff wavelength. The active region consists of 150 periods of 10 monolayers (MLs) of In0.07Ga0.93Sb and 19 MLs of InAs with InSb-like interfacial bonds. The device has a detectivity of 3×109 cm√Hz/W, dynamic impedance-area product of 0.18 Ω cm2, and peak external quantum efficiency of 3% at 40 K. X-ray diffraction and cross-sectional scanning tunneling microscopy show the structure to have a high degree of order with abrupt interfaces. A simulation of the absorption spectrum effectively reproduces the observed spectrum. © 2003 American Institute of Physics.
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85.60.Dw Photodiodes; phototransistors; photoresistors
85.60.Gz Photodetectors (including infrared and CCD detectors)
68.65.Cd Superlattices
78.67.Pt Multilayers; superlattices; photonic structures; metamaterials
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
85.30.De Semiconductor-device characterization, design, and modeling
68.49.Uv X-ray standing waves
68.35.Ct Interface structure and roughness

Effects due to disorder on photonic crystal-based waveguides

Kai-Chong Kwan, Xiangdong Zhang, Zhao-Qing Zhang, and C. T. Chan

Appl. Phys. Lett. 82, 4414 (2003); http://dx.doi.org/10.1063/1.1584512 (3 pages) | Cited 18 times

Online Publication Date: 16 June 2003

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Using the multiple-scattering method, we have studied the effects of various types of disorders on the performance of two-dimensional photonic crystal-based waveguides with cylindrical inclusions. The following three types of disorders are considered: (a) all cylinders are disordered; (b) only those cylinders in the boundary layer of the waveguide are disordered; and (c) all cylinders except those in the boundary layer of the waveguide are disordered. Our results show that, for both the cases of position and size randomness, the quality of the waveguide is insensitive to the type-(c) disorder, but very sensitive to type-(a) and type-(b) disorder. We thus conclude that the uniformity of the microstructures in the boundary layer of the waveguide is vital in ensuring the functionality of the waveguide. © 2003 American Institute of Physics.
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42.79.Gn Optical waveguides and couplers
42.70.Qs Photonic bandgap materials

Thermal property of tunnel-regenerated multiactive-region light-emitting diodes

Xia Guo, Guang-Di Shen, Yuan Ji, Xue-Zhong Wang, Jin-Yu Du, De-Shu Zou, Guo-Hong Wang, Guo Gao, Ludwig J. Balk, Ralph Heiderhoff, Teck Hock Lee, and Kang L. Wang

Appl. Phys. Lett. 82, 4417 (2003); http://dx.doi.org/10.1063/1.1583134 (3 pages) | Cited 1 time

Online Publication Date: 16 June 2003

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The thermal property of tunnel-regenerated multiactive-region (TRMAR) light-emitting diodes (LEDs) is studied in detail in this letter. These devices have the advantages of high quantum efficiency and high output optical power. To obtain the same output optical power, it has been shown that the thermal performance for TRMAR LEDs is much better than that of conventional ones. The heat generated from the reverse-biased tunneling junction in TRMAR LEDs is small and can be neglected as compared with heat produced from the active region as illustrated in scanning thermal microscopy result. An experimental comparison shows that the improved input power dependence on the luminescence intensity proves that TRMAR LEDs have better thermal properties than those of conventional ones. © 2003 American Institute of Physics.
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85.60.Jb Light-emitting devices
78.66.Fd III-V semiconductors
81.05.Ea III-V semiconductors
85.30.Kk Junction diodes

Ultrafast nonresonant third-order optical nonlinearity of a conjugated 3,3′-bipyridine derivative from 1150 to 1600 nm

Qiying Chen, Edward H. Sargent, Nicolas Leclerc, and André-Jean Attias

Appl. Phys. Lett. 82, 4420 (2003); http://dx.doi.org/10.1063/1.1584517 (3 pages) | Cited 17 times

Online Publication Date: 16 June 2003

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A conjugated 3,3′-bipyridine derivative, an apolar structure of donor–acceptor–acceptor–donor (D–A–A–D) type was designed and characterized for third-order optical nonlinearity using Z-scan technique in the wavelength range of 1150–1600 nm. Z-scan spectra reveal a positive Kerr coefficient across this wavelength range with n2 = (4.6±0.7)×10−6 cm2/GW at 1550 nm accompanied by negligible nonlinear absorption for wavelength around 1550 nm, indicating ideal figures of merit for applications in ultrafast all-optical switching. © 2003 American Institute of Physics.
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42.65.Pc Optical bistability, multistability, and switching, including local field effects
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
42.65.Re Ultrafast processes; optical pulse generation and pulse compression

Third-harmonic generation of a continuous-wave Ti:Sapphire laser in external resonant cavities

J. Mes, E. J. van Duijn, R. Zinkstok, S. Witte, and W. Hogervorst

Appl. Phys. Lett. 82, 4423 (2003); http://dx.doi.org/10.1063/1.1584515 (3 pages) | Cited 3 times

Online Publication Date: 16 June 2003

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An all-solid-state tunable continuous-wave (cw) laser operating near 272 nm with a bandwidth Γ ≈ 3 MHz has been developed. The third harmonic of light from a single-cw Ti:Sapphire laser has been generated using two external enhancement cavities. An output power of 175 mW has been produced, corresponding to an overall conversion efficiency of 8%. © 2003 American Institute of Physics.
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42.55.Rz Doped-insulator lasers and other solid state lasers
42.60.By Design of specific laser systems
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Highly reflective distributed Bragg reflectors using a deeply etched semiconductor/air grating for InGaN/GaN laser diodes

Tadashi Saitoh, Masami Kumagai, Hailong Wang, Takehiko Tawara, Toshio Nishida, Testuya Akasaka, and Naoki Kobayashi

Appl. Phys. Lett. 82, 4426 (2003); http://dx.doi.org/10.1063/1.1586992 (3 pages) | Cited 2 times

Online Publication Date: 16 June 2003

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High reflectivity is achieved by deeply etched InGaN/GaN distributed Bragg reflector (DBR) mirrors with tilted sidewalls, which are appropriately designed by using the finite-difference time-domain method. The predicted optimal structure is different from the simple design consisting of a λ/(4n) semiconductor and λ/4 air. If the sidewall of the grating is tilted by 4°, the reflectivity of the DBR mirrors decreases to less than 40%. However, any degradation in the reflectivity of a perfectly vertical sidewall can be suppressed to just a few percent even with a sidewall tilt of 4°, if the DBR structure is properly designed. We fabricated InGaN/GaN multiple-quantum well lasers based on the optimal design. The devices operate as lasers with optical pumping at a lower threshold than devices without DBR mirrors. The DBR mirror reflectivity is characterized by the relation between the threshold pump intensity and the inverse of the cavity length, resulting in a high reflectivity of 62%. © 2003 American Institute of Physics.
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42.60.By Design of specific laser systems
42.55.Px Semiconductor lasers; laser diodes
42.79.Bh Lenses, prisms and mirrors
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
81.65.Cf Surface cleaning, etching, patterning

Direct measurements of large near-band edge nonlinear index change from 1.48 to 1.55 μm in InGaAs/InAlGaAs multiquantum wells

Lukasz Brzozowski, Edward H. Sargent, Anthony Spring Thorpe, and Marcius Extavour

Appl. Phys. Lett. 82, 4429 (2003); http://dx.doi.org/10.1063/1.1585130 (3 pages) | Cited 15 times

Online Publication Date: 16 June 2003

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Direct picosecond measurements of nonlinear refractive index change and nonlinear absorption in In0.530Al0.141Ga0.329As/In0.530Ga0.470As multiquantum wells in the range 1480–1550 nm are reported. Large low-threshold nonlinear index changes are found: Δn of up to 0.14 with figure of merit of 1.38 at a fluence of 116 μJ/cm2. The index-change-over-absorption figure of merit, F, is greater than unity over much of the spectrum, pointing to the prospective applicability of the materials studied to nonlinear switching devices. © 2003 American Institute of Physics.
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78.67.De Quantum wells
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
78.47.-p Spectroscopy of solid state dynamics
42.65.-k Nonlinear optics

Flexible low-voltage electro-optic polymer modulators

Hyun-Chae Song, Min-Cheol Oh, Seh-Won Ahn, William H. Steier, Harold R. Fetterman, and Cheng Zhang

Appl. Phys. Lett. 82, 4432 (2003); http://dx.doi.org/10.1063/1.1586474 (3 pages) | Cited 27 times

Online Publication Date: 16 June 2003

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A high-performance electro-optic (EO) polymer modulator on a flexible substrate was fabricated using a polymer substrate layer lift-off method. The SU-8 polymer has widely different adhesion properties on Si and gold substrates that makes selective lift-off possible. The flexible EO polymer modulators on a 100-μm polymer substrate layer have a Vπ of 2.6 V and extinction ratio better than 20 dB at 1550 nm. The bending loss of the flexible waveguide was unchanged at bending radii as small as 1.5 mm, and no effect on Vπ was observed for a 5 mm bending radius. © 2003 American Institute of Physics.
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42.79.Hp Optical processors, correlators, and modulators
81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials
78.20.Jq Electro-optical effects
78.66.Qn Polymers; organic compounds
42.79.Wc Optical coatings
42.70.Jk Polymers and organics
42.79.Gn Optical waveguides and couplers
42.82.Cr Fabrication techniques; lithography, pattern transfer

Designs of terahertz waveguides for efficient parametric terahertz generation

Wei Shi and Yujie J. Ding

Appl. Phys. Lett. 82, 4435 (2003); http://dx.doi.org/10.1063/1.1584513 (3 pages) | Cited 16 times

Online Publication Date: 16 June 2003

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We show that for a slab waveguide, while pump and idler waves are weakly affected by the waveguide, their parametrically generated terahertz (THz) wave propagates in the form of multimodes. These waves may destructively interfere with one another in terms of their phases, resulting in inefficient THz parametric conversion. To avoid this problem, we designed a THz slab or rib waveguide that supports a quasi-single or single mode. Using these waveguides, the threshold powers for achieving oscillations can be significantly reduced due to the waveguide confinement of the THz waves. In addition, modal indices of refraction can be tailored for achieving phase matching without complicated periodic poling. © 2003 American Institute of Physics.
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42.65.Yj Optical parametric oscillators and amplifiers
42.65.Wi Nonlinear waveguides

Polarization superprism effect in surface polaritonic crystals

A. V. Zayats, W. Dickson, I. I. Smolyaninov, and C. C. Davis

Appl. Phys. Lett. 82, 4438 (2003); http://dx.doi.org/10.1063/1.1585132 (3 pages) | Cited 10 times

Online Publication Date: 16 June 2003

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Surface plasmon polariton waveguide modes excited in mutually orthogonal line defects of a surface polaritonic crystal (two-dimensional photonic crystal on a metal surface) are observed to be extremely sensitive to the polarization state of excitation light. Full switching between orthogonal waveguides can be achieved with less than 10° variation of the polarization angle. For oblique incidence, the polarization sensitivity of switching is even higher but full switching cannot be realized. This effect can be considered as a polarization-domain analog of the photonic crystal superprism effect. It suggests the possibility of building actively controlled photonic crystal devices for optical signal processing. © 2003 American Institute of Physics.
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78.66.Bz Metals and metallic alloys
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
78.68.+m Optical properties of surfaces
71.36.+c Polaritons (including photon-phonon and photon-magnon interactions)
42.65.Pc Optical bistability, multistability, and switching, including local field effects
42.79.Gn Optical waveguides and couplers

Ultraviolet AlGaN multiple-quantum-well laser diodes

Michael Kneissl, David W. Treat, Mark Teepe, Naoko Miyashita, and Noble M. Johnson

Appl. Phys. Lett. 82, 4441 (2003); http://dx.doi.org/10.1063/1.1585135 (3 pages) | Cited 23 times

Online Publication Date: 16 June 2003

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We demonstrate ultraviolet emission from current-injection AlGaN multiple-quantum-well laser diodes grown on sapphire substrates by metalorganic chemical vapor deposition. Lasing was obtained in gain-guided laser diode test structures with uncoated facets and cavity length ranging from 400 to 1500 μm. Under pulsed bias conditions, threshold current densities as low as 23 kA/cm2 have been achieved for laser diodes with emission wavelengths between 359.7 and 361.6 nm. The maximum output power was 45 mW per facet with differential quantum efficiencies of 1.3%. © 2003 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.05.Ea III-V semiconductors
78.67.De Quantum wells

Large pure refractive nonlinearity of nanostructure silica aerogel

J. T. Seo, Q. Yang, S. Creekmore, B. Tabibi, D. Temple, S. Y. Kim, K. Yoo, A. Mott, M. Namkung, and S. S. Jung

Appl. Phys. Lett. 82, 4444 (2003); http://dx.doi.org/10.1063/1.1585127 (3 pages) | Cited 9 times

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The nonlinear refraction coefficient of silica aerogel was estimated to be ∼ −1.5×10−15 m2/W ( ∼ −3.67×10−9 esu) with a signal-beam z-scan spectroscopy. The third-order nonlinear refraction coefficient of nanostructure silica aerogel was almost five orders larger than the nonlinear refraction (χ3) of bulk material. The large nonlinear refraction with high nonlinear figure of merit is an ideal optical property for nonlinear optical applications. © 2003 American Institute of Physics.
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78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
42.65.-k Nonlinear optics
82.70.Gg Gels and sols
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Linear, segmented microdischarge array with an active length of ∼1 cm: cw and pulsed operation in the rare gases and evidence of gain on the 460.30 nm transition of Xe+

P. von Allmen, D. J. Sadler, C. Jensen, N. P. Ostrom, S. T. McCain, B. A. Vojak, and J. G. Eden

Appl. Phys. Lett. 82, 4447 (2003); http://dx.doi.org/10.1063/1.1585137 (3 pages) | Cited 15 times

Online Publication Date: 16 June 2003

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A linear, segmented channel, microdischarge array having an ∼ 80×380 μm2 aperture and an active length of ∼1 cm, has been fabricated in a ceramic multilayer structure and characterized in Ne, Ar, and Xe. The length of this seven-section device is more than an order of magnitude larger than those for previous arrays (2–3 elements) of coaxial microdischarge devices, and the discharge segments are individually ballasted with integrated thick-film resistors. Pulsed and cw operation of the array for Xe pressures as large as 700 Torr has been demonstrated and experimental indications of gain on the Xe+ 6p 4D3/20→6s 4P3/2 transition at 460.30 nm are presented. This device is well suited for the excitation of microlasers, either by electron impact pumping of gases and vapors, or by photoexcitation of solid state lasers in a slab geometry. © 2003 American Institute of Physics.
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52.80.Vp Discharge in vacuum
52.58.-c Other confinement methods
52.25.Os Emission, absorption, and scattering of electromagnetic radiation
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Liquid crystal alignment surface with two easy axes induced by unidirectional rubbing

Rumiko Yamaguchi, Yusuke Goto, and Susumu Sato

Appl. Phys. Lett. 82, 4450 (2003); http://dx.doi.org/10.1063/1.1585128 (3 pages) | Cited 3 times

Online Publication Date: 16 June 2003

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We report the liquid crystal (LC) alignment surface which has two orthogonal easy axes induced by a unidirectional rubbing treatment. When the photoreactive polymer with chalconyl sidechains is irradiated with nonpolarized UV light and subsequently rubbed with a cloth, LCs align parallel and perpendicular to the rubbing direction on the UV irradiated and nonirradiated surfaces, respectively. The polarized UV absorption of the polymer and the sign of the dichroism are measured to explain the alignment mechanism. The micropatterning of the LC alignment is successfully demonstrated through the simple process using a photomask and nonpolarized UV irradiation technique. © 2003 American Institute of Physics.
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61.30.Hn Surface phenomena: alignment, anchoring, anchoring transitions, surface-induced layering, surface-induced ordering, wetting, prewetting transitions, and wetting transitions
42.70.Df Liquid crystals
78.20.Fm Birefringence

Evolution of the electron localization in a nonconventional alloy system GaAs1−xNx probed by high-magnetic-field photoluminescence

Y. J. Wang, X. Wei, Y. Zhang, A. Mascarenhas, H. P. Xin, Y. G. Hong, and C. W. Tu

Appl. Phys. Lett. 82, 4453 (2003); http://dx.doi.org/10.1063/1.1584789 (3 pages) | Cited 10 times

Online Publication Date: 16 June 2003

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We demonstrate that a high magnetic field can be used effectively not only to probe the nature of the photoluminescence (PL) in a semiconductor, but also to reveal emission peaks that are unobservable at zero field since the magnetic field can alter energy relaxation processes and the statistical distribution of the photocarriers. Our systematic magneto-PL study of GaAs1−xNx (0.1% ⩽ x<2.5%) in fields up to 30 T indicates that the character of the low-temperature PL in this system changes drastically with varying nitrogen composition x and exhibits transitions with applying strong magnetic fields. For x<0.7%, the PL spectrum shows many discrete features whose energies remain nearly stationary up to the highest applied field. However, the magnetic confinement gives rise to a feature emerging on the higher energy side of the zero-field spectrum. This feature does show a diamagnetic shift, but it is much slower that that of the GaAs band-edge transition. For x>1%, the PL spectrum evolves into a broad band, and its diamagnetic shift resembles the band-edge transition in a conventional semiconductor, and the rate of shift is comparable to that of GaAs. From the diamagnetic shift of the band, the reduced effective masses for different composition of nitrogen have been derived for this system using the standard theory for the magneto-exciton in a three dimensional semiconductor. © 2003 American Institute of Physics.
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78.55.Cr III-V semiconductors
78.20.Ls Magneto-optical effects
71.18.+y Fermi surface: calculations and measurements; effective mass, g factor
71.35.Ji Excitons in magnetic fields; magnetoexcitons

Strong ultraviolet emission from SiO2/LiNbO3(:Fe)/SiO2 structures

X. Yang, X. L. Wu, W. W. Xue, G. S. Huang, G. G. Siu, Z. G. Dong, L. Fang, and M. R. Shen

Appl. Phys. Lett. 82, 4456 (2003); http://dx.doi.org/10.1063/1.1586789 (3 pages) | Cited 4 times

Online Publication Date: 16 June 2003

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SiO2/LiNbO3(LN)/SiO2 sandwich structures were fabricated for exploring efficient light emission. After annealing at 1000 °C in O2 for 30 min, this kind of sandwich structure shows a strong ultraviolet photoluminescence (PL) with an asymmetric spectral shape. This PL spectrum may be Gaussian divided into two bands peaked at 310 (α-band) and 346 nm (β-band). If the layer of LN film is replaced by an Fe-doped LN (LN:Fe) one, the β-band vanishes and the α-band redshifts. The α-band is greatly enhanced and simultaneously becomes asymmetrical after this kind of SiO2/LN:Fe/SiO2 structure is annealed for 60 min. Spectral analysis suggests that the α-band arises from an optical transition in positively charged E′ centers at the interfaces between the LN(:Fe) film and the two SiO2 layers, while the β-band arises from intrinsic defects in the LN(:Fe) films. The mechanism for the PL enhancement is discussed in terms of a photorefractive effect in the LN(:Fe) films. © 2003 American Institute of Physics.
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78.66.Nk Insulators
78.55.Hx Other solid inorganic materials
42.79.Wc Optical coatings
81.40.Tv Optical and dielectric properties related to treatment conditions
81.40.Gh Other heat and thermomechanical treatments
73.20.Hb Impurity and defect levels; energy states of adsorbed species

Nonuniform current distribution in metal/diamond/metal vertical structures

G. Conte, M. C. Rossi, S. Salvatori, F. Tersigni, P. Ascarelli, and E. Cappelli

Appl. Phys. Lett. 82, 4459 (2003); http://dx.doi.org/10.1063/1.1583855 (3 pages) | Cited 6 times

Online Publication Date: 16 June 2003

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The role of grain boundaries (GBs) in undoped polycrystalline diamond films has been investigated by dc and ac electrical measurements in a wide temperature range. Hopping transport along GB percolating paths and field-assisted thermal ionization of trapped charges are observed at low and high electric field strength, respectively. The temperature dependence of the ac conductivity, which reduces to a universal curve according to a random free-energy barrier model, suggests that, at low field strengths, current flow is mainly confined into GB domains in a wide temperature range. Only in the high-temperature and high-field ranges, do crystalline diamond grains become involved in current transport. © 2003 American Institute of Physics.
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73.40.Sx Metal-semiconductor-metal structures
73.50.Dn Low-field transport and mobility; piezoresistance
61.72.Mm Grain and twin boundaries

Subwavelength ripple formation on the surfaces of compound semiconductors irradiated with femtosecond laser pulses

A. Borowiec and H. K. Haugen

Appl. Phys. Lett. 82, 4462 (2003); http://dx.doi.org/10.1063/1.1586457 (3 pages) | Cited 148 times

Online Publication Date: 16 June 2003

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High-spatial-frequency periodic structures on the surfaces of InP, GaP, and GaAs have been observed after multiple-pulse femtosecond laser irradiation at wavelengths in the transparency regions of the respective solids. The periods of the structures are substantially shorter than the wavelengths of the incident laser fields in the bulk materials. In contrast, high-frequency structures were not observed for laser photon energies above the band gaps of the target materials. © 2003 American Institute of Physics.
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79.20.Ds Laser-beam impact phenomena
68.35.B- Structure of clean surfaces (and surface reconstruction)
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Shortest intersubband transition wavelength (1.68 μm) achieved in AlN/GaN multiple quantum wells by metalorganic vapor phase epitaxy

Ichitaro Waki, Chaiyasit Kumtornkittikul, Yukihiro Shimogaki, and Yoshiaki Nakano

Appl. Phys. Lett. 82, 4465 (2003); http://dx.doi.org/10.1063/1.1586473 (3 pages) | Cited 29 times

Online Publication Date: 16 June 2003

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Two-hundred-period high-quality AlN/GaN multiple quantum wells (MQWs) grown by metalorganic vapor phase epitaxy are studied using high-resolution x-ray diffraction, transmission electron microscopy, and optical transmission spectroscopy. Excellent interfaces of the MQWs are confirmed by these measurements. The strong intersubband absorption peak at a wavelength of 1.68 μm is achieved for AlN (1.6 nm)/GaN(1.7 nm) MQW. The full width at half-maximum of the absorption peak is estimated to be 27 meV. © 2003 American Institute of Physics.
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78.67.De Quantum wells
73.21.Fg Quantum wells
78.30.Fs III-V and II-VI semiconductors
68.65.Fg Quantum wells

Interface energy of Au7Si grown in the interfacial layer of truncated hexagonal dipyramidal Au nanoislands on polycrystalline-silicon

J. S. Wu, Y. F. Chen, S. Dhara, C. T. Wu, K. H. Chen, and L. C. Chen

Appl. Phys. Lett. 82, 4468 (2003); http://dx.doi.org/10.1063/1.1586997 (3 pages) | Cited 7 times

Online Publication Date: 16 June 2003

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Growth of truncated hexagonal dipyramidal Au nanoislands is reported by annealing Au/amorphous-Si/crystalline-Si at 1030 °C in oxygen and nitrogen ambient. Metastable gold silicide phase of Au7Si is observed to form at the interface of Au and polycrystalline Si, which was transformed from amorphous Si. Oxygen, acting as an impurity, inhibits outdiffusion of Si at the interface and thus controls the growth of Si deficient metastable phase of Au7Si in a diffusion-limited growth process. Interface energies of Au7Si (0.623–0.672 N/m) and Au–Au7Si (1.438–1.471 N/m) are derived from the contact angle measurements of the island structure involving Au and Au7Si. © 2003 American Institute of Physics.
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68.35.Md Surface thermodynamics, surface energies
68.35.Ct Interface structure and roughness

Inversion domains and pinholes in GaN grown over Si(111)

A. M. Sánchez, P. Ruterana, M. Benamara, and H. P. Strunk

Appl. Phys. Lett. 82, 4471 (2003); http://dx.doi.org/10.1063/1.1584072 (3 pages) | Cited 6 times

Online Publication Date: 16 June 2003

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High-resolution transmission electron microscopy is used to analyze the connection between pinholes and inversion domains at the AlN/GaN interface. From some pinholes on top of the AlN buffer layer, the subsequent growth of GaN was observed to lead to the formation of inversion domains. In addition, the pinhole area which was originally the termination of defects from the buffer layer is highly strained and its boundary facets in {11math2} and {11math3} atomic planes. Inside the GaN the inversion domain boundary quickly settles to the usual {10math0} planes. © 2003 American Institute of Physics.
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68.55.-a Thin film structure and morphology
81.05.Ea III-V semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Early manifestation of localization effects in diluted Ga(AsN)

F. Masia, A. Polimeni, G. Baldassarri Höger von Högersthal, M. Bissiri, M. Capizzi, P. J. Klar, and W. Stolz

Appl. Phys. Lett. 82, 4474 (2003); http://dx.doi.org/10.1063/1.1586787 (3 pages) | Cited 35 times

Online Publication Date: 16 June 2003

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The electron effective mass, me, and extent of exciton wave function, rexc, were derived in GaAs1−yNy (y = 0.043%–0.5%) from magnetophotoluminescence measurements. With an increase in nitrogen concentration, we find that me and rexc undergo a rapid increase and squeezing, respectively, even for y ≈ 0.1%. This quite early manifestation of nitrogen-induced localization effects imposes important constraints on existing theoretical models. © 2003 American Institute of Physics.
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71.55.Eq III-V semiconductors
71.18.+y Fermi surface: calculations and measurements; effective mass, g factor
71.35.Ji Excitons in magnetic fields; magnetoexcitons
78.55.Cr III-V semiconductors
78.20.Ls Magneto-optical effects

Effect of InGaAs capping layer on the properties of InAs/InGaAs quantum dots and lasers

F. Y. Chang, C. C. Wu, and H. H. Lin

Appl. Phys. Lett. 82, 4477 (2003); http://dx.doi.org/10.1063/1.1585125 (3 pages) | Cited 17 times

Online Publication Date: 16 June 2003

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We report the effects of In0.33Ga0.67As capping layers on the structural and optical properties of InAs self-organized quantum dots grown by gas-source molecular-beam epitaxy. With different deposition methods for the InGaAs capping layer, the quantum-dot density can be adjusted from 2.3×1010 to 1.7×1011 cm−2. As-cleaved 3.98-mm-long diode laser using triple stacks of InAs quantum dots with the capping layer grown by GaAs/InAs sequential binary growth demonstrates an emission wavelength of 1305 nm and a threshold current density of 360 A/cm2. A ground-state saturation gain of 16.6 cm−1 is achieved due to the high dot density. © 2003 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
78.67.Hc Quantum dots
68.65.Hb Quantum dots (patterned in quantum wells)
81.05.Ea III-V semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Formation of patterned buried insulating layer in Si substrates by He+ implantation and annealing in oxidation atmosphere

Atsushi Ogura

Appl. Phys. Lett. 82, 4480 (2003); http://dx.doi.org/10.1063/1.1586783 (3 pages) | Cited 4 times

Online Publication Date: 16 June 2003

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We fabricated patterned buried insulating layers in a Si substrate by implanting He+ ions through a patterned mask and annealing in an oxidation atmosphere. Compared with patterned O+ implantation and annealing, this technique causes less damage, and can therefore reduce defect density at the edge of the patterned buried insulator. The buried insulator could be SiO2 or a void with thin SiO2 film on the inner surface. The formation of a void could further reduce defect density, probably because the stress induced by SiO2 formation is small. The fabricated surface was extremely smooth within the focal depth limitations of state-of-the-art photolithography techniques. © 2003 American Institute of Physics.
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61.72.uf Ge and Si
61.80.Jh Ion radiation effects
81.65.Mq Oxidation
85.40.Hp Lithography, masks and pattern transfer
61.72.Cc Kinetics of defect formation and annealing
81.40.Gh Other heat and thermomechanical treatments
73.20.At Surface states, band structure, electron density of states
61.72.Qq Microscopic defects (voids, inclusions, etc.)

Interface-reaction-mediated formation of two-dimensional Si islands on CaF2

Andreas Klust, Michael Grimsehl, and Joachim Wollschläger

Appl. Phys. Lett. 82, 4483 (2003); http://dx.doi.org/10.1063/1.1585126 (3 pages) | Cited 4 times

Online Publication Date: 16 June 2003

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The growth of Si on thin ( ∼ 3 nm thick) CaF2/Si(111) films in the temperature range of 500–700 °C was investigated using ultrahigh-vacuum noncontact atomic force microscopy. At 500 °C, the morphology is dominated by small cluster-like shaped Si islands due to weak binding between Si and CaF2; with increasing growth temperatures these islands coexist with an increasing amount of triangular-shaped, flat Si islands. The formation of flattened triangular islands is attributed to an increased binding of Si to the CaF2 film at higher temperatures. The binding changes as a result of an interface reaction leading to the removal of fluorine atoms and the formation of Ca–Si bonds. © 2003 American Institute of Physics.
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68.55.-a Thin film structure and morphology
68.35.Ct Interface structure and roughness
68.37.Ps Atomic force microscopy (AFM)
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
68.35.Fx Diffusion; interface formation
68.47.Fg Semiconductor surfaces
68.35.B- Structure of clean surfaces (and surface reconstruction)
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