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23 Jun 2003

Volume 82, Issue 25, pp. 4411-4611

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Appl. Phys. Lett. 82, 4322 (2003); http://dx.doi.org/10.1063/1.1582366 (3 pages)

Hongwei Qu, Wei Yao, T. Garcia, Jiandi Zhang, A. V. Sorokin, S. Ducharme, P. A. Dowben, and V. M. Fridkin
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Scaling behavior and parasitic series resistance in disordered organic field-effect transistors

E. J. Meijer, G. H. Gelinck, E. van Veenendaal, B.-H. Huisman, D. M. de Leeuw, and T. M. Klapwijk

Appl. Phys. Lett. 82, 4576 (2003); http://dx.doi.org/10.1063/1.1581389 (3 pages) | Cited 86 times

Online Publication Date: 16 June 2003

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The scaling behavior of the transfer characteristics of solution-processed disordered organic thin-film transistors with channel length is investigated. This is done for a variety of organic semiconductors in combination with gold injecting electrodes. From the channel-length dependence of the transistor resistance in the conducting ON-state, we determine the field-effect mobility and the parasitic series resistance. The extracted parasitic resistance, typically in the MΩ range, depends on the applied gate voltage, and we find experimentally that the parasitic resistance decreases with increasing field-effect mobility. © 2003 American Institute of Physics.
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85.30.Tv Field effect devices

Vertical channel all-organic thin-film transistors

R. Parashkov, E. Becker, S. Hartmann, G. Ginev, D. Schneider, H. Krautwald, T. Dobbertin, D. Metzdorf, F. Brunetti, C. Schildknecht, A. Kammoun, M. Brandes, T. Riedl, H.-H. Johannes, and W. Kowalsky

Appl. Phys. Lett. 82, 4579 (2003); http://dx.doi.org/10.1063/1.1584786 (2 pages) | Cited 25 times

Online Publication Date: 16 June 2003

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Technologically simple and cost-effective processes are essential for the fabrication of organic electronic devices. In this letter, we present a concept for making vertical channel all-organic thin-film transistors on glass substrate. This concept avoids the need for patterning processes with high lateral resolution by defining the channel length through the thickness of an insulating layer. Our devices are based on commercially available poly(ethylene dioxythiophene)/poly(styrene sulfonate) dispersion for source, drain, and gate electrodes, photoresist as the insulating layer and photosensitized poly(vinyl alcohol) as the gate insulator. Pentacene was used as the organic semiconductor. Functional devices with channel length of 2.4 μm and width of 1 mm have been realized, and we report electrical characteristics of these devices. © 2003 American Institute of Physics.
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85.30.Tv Field effect devices
85.40.Hp Lithography, masks and pattern transfer

Fabrication and characterization of C60 thin-film transistors with high field-effect mobility

S. Kobayashi, T. Takenobu, S. Mori, A. Fujiwara, and Y. Iwasa

Appl. Phys. Lett. 82, 4581 (2003); http://dx.doi.org/10.1063/1.1577383 (3 pages) | Cited 132 times

Online Publication Date: 16 June 2003

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We report an improvement in performance of C60 thin-film field-effect transistors (TFTs) fabricated by molecular-beam deposition. Devices, fabricated and characterized under a high vacuum without exposure to air, routinely showed current on/off ratios >108 and field-effect mobilities in the range of 0.5–0.3 cm2/V s. The mobility obtained is close to that derived from the photocurrent measurements on C60 thin films and comparable to a very high value among n-type organic TFTs. © 2003 American Institute of Physics.
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85.65.+h Molecular electronic devices
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
85.30.Tv Field effect devices

Charge-injection-controlled organic transistor

Ken-ichi Nakayama, Shin-ya Fujimoto, and Masaaki Yokoyama

Appl. Phys. Lett. 82, 4584 (2003); http://dx.doi.org/10.1063/1.1577389 (3 pages) | Cited 14 times

Online Publication Date: 16 June 2003

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A promising type of organic transistor based on the charge injection process at an organic/metal interface was proposed and demonstrated. The device was composed of an organic deposited film sandwiched between two metal electrodes, with a third stripe-shaped electrode embedded in the organic film. The output current, corresponding to the collector current, was modulated by an applied voltage on the third electrode, corresponding to the base electrode, and the current amplification factor, hFE, exceeded 70. The operation of the device as a transistor was attributed to electron injection from the accumulation of holes supplied by the third electrode. © 2003 American Institute of Physics.
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85.30.Pq Bipolar transistors

Electrochemically doped polymeric anode for improving the performance of molecular organic light-emitting diodes

F. Zhang, A. Petr, and L. Dunsch

Appl. Phys. Lett. 82, 4587 (2003); http://dx.doi.org/10.1063/1.1586784 (3 pages) | Cited 11 times

Online Publication Date: 16 June 2003

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The doping level of spin-coated poly(ethylenedioxythiophene):poly(styrenesulfonate) (PEDT:PSS) films was adjusted quantitatively by an electrochemical doping/dedoping process in toluenesulfonic acid containing solution. The increase in doping level leads to an improvement of hole injection from the PEDT:PSS/ITO (indium–tin oxide) anode to the hole transporting layer, which is attributed to the enhanced work function of PEDT. The performance of vapor-deposited tri(8-hydroxyquinoline) aluminum (Alq3) based organic light-emitting devices with these anodes is shown to depend strongly on the doping level of PEDT:PSS. The device, built on a highly oxidized anode by electrochemical modification (electrochemical equilibrium potential of 0.59 V vs Ag/AgCl), shows a reduction of the operating voltage by 2 V, as well as remarkable enhancement of the luminance compared to the device on a pristine polymer anode. © 2003 American Institute of Physics.
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85.60.Jb Light-emitting devices

Sound-resonance hydrogen sensor

Shuxiang Dong, Feiming Bai, JieFang Li, and Dwight Viehland

Appl. Phys. Lett. 82, 4590 (2003); http://dx.doi.org/10.1063/1.1586994 (3 pages) | Cited 5 times

Online Publication Date: 16 June 2003

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A hydrogen sensor is reported in which a small piezoelectric-sound-resonance-cavity (PSRC) is used as the sensing element. Detection utilizes sound resonance and acoustic property differences between H2 and air as a sensing mechanism. Changes in H2 concentration result in a shift of the sound-resonance state of the PSRC. Preliminary experiments have demonstrated a sensitivity limit of 8 ppm, a fast response time ∼1.5 second, and detection capabilities over a broad concentration range 10−5<n<0.2. © 2003 American Institute of Physics.
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07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
85.50.-n Dielectric, ferroelectric, and piezoelectric devices

AlGaN/GaN/AlGaN double heterostructure for high-power III-N field-effect transistors

C. Q. Chen, J. P. Zhang, V. Adivarahan, A. Koudymov, H. Fatima, G. Simin, J. Yang, and M. Asif Khan

Appl. Phys. Lett. 82, 4593 (2003); http://dx.doi.org/10.1063/1.1587274 (3 pages) | Cited 28 times

Online Publication Date: 16 June 2003

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We propose and demonstrate an AlGaN/GaN/AlGaN double heterostructure (DH) with significantly improved two-dimensional (2D) confinement for high-power III-N heterostructure field-effect transistors (HFETs). The DH was grown directly on an AlN buffer over i-SiC substrate. It enables an excellent confinement of the 2D gas and also does not suffer from the parasitic channel formation as experienced in past designs grown over GaN buffer layers. Elimination of the GaN buffer modifies the strain distribution in the DH, enabling Al contents in the barrier region well over 30%. For the AlGaN/GaN/AlGaN DH design, the 2D electron gas mobility achieved was 1150 cm2/V s at room temperature and 3400 cm2/V s at 77 K, whereas the temperature independent sheet carrier density was NS ≈ 1.1×1013 cm−2. Compared to a regular AlGaN/GaN structure, the channel mobility-concentration profiling shows significant improvement in the carrier confinement. Sample DHFETs with 1-μm long gates demonstrate the threshold voltage of 3.5 V, with a peak saturation current of 0.6–0.8 A/mm. © 2003 American Institute of Physics.
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85.30.Tv Field effect devices
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