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23 Jun 2003

Volume 82, Issue 25, pp. 4411-4611

Issue Cover Spotlight Figure

Appl. Phys. Lett. 82, 4322 (2003); http://dx.doi.org/10.1063/1.1582366 (3 pages)

Hongwei Qu, Wei Yao, T. Garcia, Jiandi Zhang, A. V. Sorokin, S. Ducharme, P. A. Dowben, and V. M. Fridkin
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Ba8ZnTa6O24: a high-Q microwave dielectric from a potentially diverse homologous series

S. M. Moussa, J. B. Claridge, M. J. Rosseinsky, S. Clarke, R. M. Ibberson, T. Price, D. M. Iddles, and D. C. Sinclair

Appl. Phys. Lett. 82, 4537 (2003); http://dx.doi.org/10.1063/1.1582363 (3 pages) | Cited 24 times

Online Publication Date: 16 June 2003

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The ceramic Ba8ZnTa6O24 has been synthesized in isolation and its dielectric and crystallographic properties characterized. The material affords excellent dielectric properties, with a high unloaded quality factor Qu = 20 800 at 3.28 GHz, high relative permittivity εr = 29 and a temperature coefficient of resonant frequency τf = 29.4 ppm/°C. The crystal structure adopted is complex, comprising mixed cubic and hexagonal perovskite subunits, and contains cation vacancies on the octahedral sites. A second phase with a closely related structure is identified, demonstrating the existence of a family of materials. This structural complexity offers diverse opportunities for substitutions calculated to enhance the figures of merit reported. © 2003 American Institute of Physics.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.-e Ferroelectricity and antiferroelectricity
61.66.Fn Inorganic compounds
77.22.Ch Permittivity (dielectric function)

Residual stress analysis in ferroelectric Pb(Zr0.52Ti0.48)O3 thin films fabricated by a sol-gel process

Kui Yao, Shuhui Yu, and Francis Eng-Hock Tay

Appl. Phys. Lett. 82, 4540 (2003); http://dx.doi.org/10.1063/1.1587272 (3 pages) | Cited 25 times

Online Publication Date: 16 June 2003

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Ferroelectric Pb(Zr0.52Ti0.48)O3 (PZT) films were prepared by a modified sol-gel process, in which polyethylene glycol (PEG) was added to the precursor solutions. An x-ray diffraction (XRD) method that detected the d(123) variation associated with the change in the incline angle ψ of the plane (123) was developed to quantify the residual stress in the PZT films. The stress could not be determined from the wafer curvature due to the effects of both the underlying layers and interdiffusion among layers. Using our XRD method, it was found that the residual stress in the resulting PZT films was significantly reduced when PEG was added to the precursor solutions. Moreover, we observed a further reduction of residual stress with increasing molecular weight of the PEG additive. These results could explain why a thicker, crack-free film can be achieved by adding polymers to the sol-gel precursor solutions. © 2003 American Institute of Physics.
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81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
81.10.Dn Growth from solutions
81.10.Fq Growth from melts; zone melting and refining
77.55.-g Dielectric thin films
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
68.60.Bs Mechanical and acoustical properties
68.55.-a Thin film structure and morphology
77.80.-e Ferroelectricity and antiferroelectricity
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