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23 Jun 2003

Volume 82, Issue 25, pp. 4411-4611

Issue Cover Spotlight Figure

Appl. Phys. Lett. 82, 4322 (2003); http://dx.doi.org/10.1063/1.1582366 (3 pages)

Hongwei Qu, Wei Yao, T. Garcia, Jiandi Zhang, A. V. Sorokin, S. Ducharme, P. A. Dowben, and V. M. Fridkin
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Publisher’s Note: “Ga vacancies as dominant intrinsic acceptors in GaN grown by hydride vapor phase epitaxy” [Appl. Phys. Lett. 82, 3433 (2003)]

J. Oila, J. Kivioja, V. Ranki, K. Saarinen, D. C. Look, R. J. Molnar, S. S. Park, S. K. Lee, and J. Y. Han

Appl. Phys. Lett. 82, 4611 (2003); http://dx.doi.org/10.1063/1.1589006 (1 page) | Cited 1 time

Online Publication Date: 16 June 2003

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Abstract Unavailable
Show PACS
99.10.Fg Publisher's note
61.72.J- Point defects and defect clusters
71.55.Eq III-V semiconductors
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
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