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23 Jun 2003

Volume 82, Issue 25, pp. 4411-4611

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Appl. Phys. Lett. 82, 4322 (2003); http://dx.doi.org/10.1063/1.1582366 (3 pages)

Hongwei Qu, Wei Yao, T. Garcia, Jiandi Zhang, A. V. Sorokin, S. Ducharme, P. A. Dowben, and V. M. Fridkin
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Very-long wave ternary antimonide superlattice photodiode with 21 μm cutoff

E. H. Aifer, E. M. Jackson, G. Boishin, L. J. Whitman, I. Vurgaftman, J. R. Meyer, J. C. Culbertson, and B. R. Bennett

Appl. Phys. Lett. 82, 4411 (2003); http://dx.doi.org/10.1063/1.1584518 (3 pages) | Cited 14 times

Online Publication Date: 16 June 2003

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We describe a ternary antimonide superlattice photodiode with a 21 μm cutoff wavelength. The active region consists of 150 periods of 10 monolayers (MLs) of In0.07Ga0.93Sb and 19 MLs of InAs with InSb-like interfacial bonds. The device has a detectivity of 3×109 cm√Hz/W, dynamic impedance-area product of 0.18 Ω cm2, and peak external quantum efficiency of 3% at 40 K. X-ray diffraction and cross-sectional scanning tunneling microscopy show the structure to have a high degree of order with abrupt interfaces. A simulation of the absorption spectrum effectively reproduces the observed spectrum. © 2003 American Institute of Physics.
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85.60.Dw Photodiodes; phototransistors; photoresistors
85.60.Gz Photodetectors (including infrared and CCD detectors)
68.65.Cd Superlattices
78.67.Pt Multilayers; superlattices; photonic structures; metamaterials
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
85.30.De Semiconductor-device characterization, design, and modeling
68.49.Uv X-ray standing waves
68.35.Ct Interface structure and roughness

Effects due to disorder on photonic crystal-based waveguides

Kai-Chong Kwan, Xiangdong Zhang, Zhao-Qing Zhang, and C. T. Chan

Appl. Phys. Lett. 82, 4414 (2003); http://dx.doi.org/10.1063/1.1584512 (3 pages) | Cited 18 times

Online Publication Date: 16 June 2003

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Using the multiple-scattering method, we have studied the effects of various types of disorders on the performance of two-dimensional photonic crystal-based waveguides with cylindrical inclusions. The following three types of disorders are considered: (a) all cylinders are disordered; (b) only those cylinders in the boundary layer of the waveguide are disordered; and (c) all cylinders except those in the boundary layer of the waveguide are disordered. Our results show that, for both the cases of position and size randomness, the quality of the waveguide is insensitive to the type-(c) disorder, but very sensitive to type-(a) and type-(b) disorder. We thus conclude that the uniformity of the microstructures in the boundary layer of the waveguide is vital in ensuring the functionality of the waveguide. © 2003 American Institute of Physics.
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42.79.Gn Optical waveguides and couplers
42.70.Qs Photonic bandgap materials

Thermal property of tunnel-regenerated multiactive-region light-emitting diodes

Xia Guo, Guang-Di Shen, Yuan Ji, Xue-Zhong Wang, Jin-Yu Du, De-Shu Zou, Guo-Hong Wang, Guo Gao, Ludwig J. Balk, Ralph Heiderhoff, Teck Hock Lee, and Kang L. Wang

Appl. Phys. Lett. 82, 4417 (2003); http://dx.doi.org/10.1063/1.1583134 (3 pages) | Cited 1 time

Online Publication Date: 16 June 2003

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The thermal property of tunnel-regenerated multiactive-region (TRMAR) light-emitting diodes (LEDs) is studied in detail in this letter. These devices have the advantages of high quantum efficiency and high output optical power. To obtain the same output optical power, it has been shown that the thermal performance for TRMAR LEDs is much better than that of conventional ones. The heat generated from the reverse-biased tunneling junction in TRMAR LEDs is small and can be neglected as compared with heat produced from the active region as illustrated in scanning thermal microscopy result. An experimental comparison shows that the improved input power dependence on the luminescence intensity proves that TRMAR LEDs have better thermal properties than those of conventional ones. © 2003 American Institute of Physics.
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85.60.Jb Light-emitting devices
78.66.Fd III-V semiconductors
81.05.Ea III-V semiconductors
85.30.Kk Junction diodes

Ultrafast nonresonant third-order optical nonlinearity of a conjugated 3,3′-bipyridine derivative from 1150 to 1600 nm

Qiying Chen, Edward H. Sargent, Nicolas Leclerc, and André-Jean Attias

Appl. Phys. Lett. 82, 4420 (2003); http://dx.doi.org/10.1063/1.1584517 (3 pages) | Cited 17 times

Online Publication Date: 16 June 2003

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A conjugated 3,3′-bipyridine derivative, an apolar structure of donor–acceptor–acceptor–donor (D–A–A–D) type was designed and characterized for third-order optical nonlinearity using Z-scan technique in the wavelength range of 1150–1600 nm. Z-scan spectra reveal a positive Kerr coefficient across this wavelength range with n2 = (4.6±0.7)×10−6 cm2/GW at 1550 nm accompanied by negligible nonlinear absorption for wavelength around 1550 nm, indicating ideal figures of merit for applications in ultrafast all-optical switching. © 2003 American Institute of Physics.
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42.65.Pc Optical bistability, multistability, and switching, including local field effects
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
42.65.Re Ultrafast processes; optical pulse generation and pulse compression

Third-harmonic generation of a continuous-wave Ti:Sapphire laser in external resonant cavities

J. Mes, E. J. van Duijn, R. Zinkstok, S. Witte, and W. Hogervorst

Appl. Phys. Lett. 82, 4423 (2003); http://dx.doi.org/10.1063/1.1584515 (3 pages) | Cited 3 times

Online Publication Date: 16 June 2003

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An all-solid-state tunable continuous-wave (cw) laser operating near 272 nm with a bandwidth Γ ≈ 3 MHz has been developed. The third harmonic of light from a single-cw Ti:Sapphire laser has been generated using two external enhancement cavities. An output power of 175 mW has been produced, corresponding to an overall conversion efficiency of 8%. © 2003 American Institute of Physics.
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42.55.Rz Doped-insulator lasers and other solid state lasers
42.60.By Design of specific laser systems
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Highly reflective distributed Bragg reflectors using a deeply etched semiconductor/air grating for InGaN/GaN laser diodes

Tadashi Saitoh, Masami Kumagai, Hailong Wang, Takehiko Tawara, Toshio Nishida, Testuya Akasaka, and Naoki Kobayashi

Appl. Phys. Lett. 82, 4426 (2003); http://dx.doi.org/10.1063/1.1586992 (3 pages) | Cited 2 times

Online Publication Date: 16 June 2003

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High reflectivity is achieved by deeply etched InGaN/GaN distributed Bragg reflector (DBR) mirrors with tilted sidewalls, which are appropriately designed by using the finite-difference time-domain method. The predicted optimal structure is different from the simple design consisting of a λ/(4n) semiconductor and λ/4 air. If the sidewall of the grating is tilted by 4°, the reflectivity of the DBR mirrors decreases to less than 40%. However, any degradation in the reflectivity of a perfectly vertical sidewall can be suppressed to just a few percent even with a sidewall tilt of 4°, if the DBR structure is properly designed. We fabricated InGaN/GaN multiple-quantum well lasers based on the optimal design. The devices operate as lasers with optical pumping at a lower threshold than devices without DBR mirrors. The DBR mirror reflectivity is characterized by the relation between the threshold pump intensity and the inverse of the cavity length, resulting in a high reflectivity of 62%. © 2003 American Institute of Physics.
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42.60.By Design of specific laser systems
42.55.Px Semiconductor lasers; laser diodes
42.79.Bh Lenses, prisms and mirrors
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
81.65.Cf Surface cleaning, etching, patterning

Direct measurements of large near-band edge nonlinear index change from 1.48 to 1.55 μm in InGaAs/InAlGaAs multiquantum wells

Lukasz Brzozowski, Edward H. Sargent, Anthony Spring Thorpe, and Marcius Extavour

Appl. Phys. Lett. 82, 4429 (2003); http://dx.doi.org/10.1063/1.1585130 (3 pages) | Cited 15 times

Online Publication Date: 16 June 2003

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Direct picosecond measurements of nonlinear refractive index change and nonlinear absorption in In0.530Al0.141Ga0.329As/In0.530Ga0.470As multiquantum wells in the range 1480–1550 nm are reported. Large low-threshold nonlinear index changes are found: Δn of up to 0.14 with figure of merit of 1.38 at a fluence of 116 μJ/cm2. The index-change-over-absorption figure of merit, F, is greater than unity over much of the spectrum, pointing to the prospective applicability of the materials studied to nonlinear switching devices. © 2003 American Institute of Physics.
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78.67.De Quantum wells
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
78.47.-p Spectroscopy of solid state dynamics
42.65.-k Nonlinear optics

Flexible low-voltage electro-optic polymer modulators

Hyun-Chae Song, Min-Cheol Oh, Seh-Won Ahn, William H. Steier, Harold R. Fetterman, and Cheng Zhang

Appl. Phys. Lett. 82, 4432 (2003); http://dx.doi.org/10.1063/1.1586474 (3 pages) | Cited 27 times

Online Publication Date: 16 June 2003

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A high-performance electro-optic (EO) polymer modulator on a flexible substrate was fabricated using a polymer substrate layer lift-off method. The SU-8 polymer has widely different adhesion properties on Si and gold substrates that makes selective lift-off possible. The flexible EO polymer modulators on a 100-μm polymer substrate layer have a Vπ of 2.6 V and extinction ratio better than 20 dB at 1550 nm. The bending loss of the flexible waveguide was unchanged at bending radii as small as 1.5 mm, and no effect on Vπ was observed for a 5 mm bending radius. © 2003 American Institute of Physics.
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42.79.Hp Optical processors, correlators, and modulators
81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials
78.20.Jq Electro-optical effects
78.66.Qn Polymers; organic compounds
42.79.Wc Optical coatings
42.70.Jk Polymers and organics
42.79.Gn Optical waveguides and couplers
42.82.Cr Fabrication techniques; lithography, pattern transfer

Designs of terahertz waveguides for efficient parametric terahertz generation

Wei Shi and Yujie J. Ding

Appl. Phys. Lett. 82, 4435 (2003); http://dx.doi.org/10.1063/1.1584513 (3 pages) | Cited 16 times

Online Publication Date: 16 June 2003

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We show that for a slab waveguide, while pump and idler waves are weakly affected by the waveguide, their parametrically generated terahertz (THz) wave propagates in the form of multimodes. These waves may destructively interfere with one another in terms of their phases, resulting in inefficient THz parametric conversion. To avoid this problem, we designed a THz slab or rib waveguide that supports a quasi-single or single mode. Using these waveguides, the threshold powers for achieving oscillations can be significantly reduced due to the waveguide confinement of the THz waves. In addition, modal indices of refraction can be tailored for achieving phase matching without complicated periodic poling. © 2003 American Institute of Physics.
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42.65.Yj Optical parametric oscillators and amplifiers
42.65.Wi Nonlinear waveguides

Polarization superprism effect in surface polaritonic crystals

A. V. Zayats, W. Dickson, I. I. Smolyaninov, and C. C. Davis

Appl. Phys. Lett. 82, 4438 (2003); http://dx.doi.org/10.1063/1.1585132 (3 pages) | Cited 10 times

Online Publication Date: 16 June 2003

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Surface plasmon polariton waveguide modes excited in mutually orthogonal line defects of a surface polaritonic crystal (two-dimensional photonic crystal on a metal surface) are observed to be extremely sensitive to the polarization state of excitation light. Full switching between orthogonal waveguides can be achieved with less than 10° variation of the polarization angle. For oblique incidence, the polarization sensitivity of switching is even higher but full switching cannot be realized. This effect can be considered as a polarization-domain analog of the photonic crystal superprism effect. It suggests the possibility of building actively controlled photonic crystal devices for optical signal processing. © 2003 American Institute of Physics.
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78.66.Bz Metals and metallic alloys
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
78.68.+m Optical properties of surfaces
71.36.+c Polaritons (including photon-phonon and photon-magnon interactions)
42.65.Pc Optical bistability, multistability, and switching, including local field effects
42.79.Gn Optical waveguides and couplers

Ultraviolet AlGaN multiple-quantum-well laser diodes

Michael Kneissl, David W. Treat, Mark Teepe, Naoko Miyashita, and Noble M. Johnson

Appl. Phys. Lett. 82, 4441 (2003); http://dx.doi.org/10.1063/1.1585135 (3 pages) | Cited 23 times

Online Publication Date: 16 June 2003

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We demonstrate ultraviolet emission from current-injection AlGaN multiple-quantum-well laser diodes grown on sapphire substrates by metalorganic chemical vapor deposition. Lasing was obtained in gain-guided laser diode test structures with uncoated facets and cavity length ranging from 400 to 1500 μm. Under pulsed bias conditions, threshold current densities as low as 23 kA/cm2 have been achieved for laser diodes with emission wavelengths between 359.7 and 361.6 nm. The maximum output power was 45 mW per facet with differential quantum efficiencies of 1.3%. © 2003 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.05.Ea III-V semiconductors
78.67.De Quantum wells

Large pure refractive nonlinearity of nanostructure silica aerogel

J. T. Seo, Q. Yang, S. Creekmore, B. Tabibi, D. Temple, S. Y. Kim, K. Yoo, A. Mott, M. Namkung, and S. S. Jung

Appl. Phys. Lett. 82, 4444 (2003); http://dx.doi.org/10.1063/1.1585127 (3 pages) | Cited 10 times

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The nonlinear refraction coefficient of silica aerogel was estimated to be ∼ −1.5×10−15 m2/W ( ∼ −3.67×10−9 esu) with a signal-beam z-scan spectroscopy. The third-order nonlinear refraction coefficient of nanostructure silica aerogel was almost five orders larger than the nonlinear refraction (χ3) of bulk material. The large nonlinear refraction with high nonlinear figure of merit is an ideal optical property for nonlinear optical applications. © 2003 American Institute of Physics.
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78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
42.65.-k Nonlinear optics
82.70.Gg Gels and sols
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