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23 Jun 2003

Volume 82, Issue 25, pp. 4411-4611

Issue Cover Spotlight Figure

Appl. Phys. Lett. 82, 4322 (2003); http://dx.doi.org/10.1063/1.1582366 (3 pages)

Hongwei Qu, Wei Yao, T. Garcia, Jiandi Zhang, A. V. Sorokin, S. Ducharme, P. A. Dowben, and V. M. Fridkin
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Voltage-induced phase transition in arrays of metallic nanodots: Computed transport and surface potential structure

F. Remacle and R. D. Levine

Appl. Phys. Lett. 82, 4543 (2003); http://dx.doi.org/10.1063/1.1583871 (3 pages) | Cited 3 times

Online Publication Date: 16 June 2003

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Computed dc transport in compressed arrays of metallic quantum dots exhibits a voltage-induced phase transition at low temperatures. The transition is seen in the temperature dependence of the conductance at different voltages: from a variable hopping dependence at low voltage to an ohmic, activated behavior at higher voltages. The computations also exhibit the transition as a break in the current versus voltage plots at low temperatures where, at higher voltages, the plot is linear. At higher temperatures, the conductance is ohmic. A many-electron basis is used. The same transition is seen in the surface potential contours. © 2003 American Institute of Physics.
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73.63.Kv Quantum dots
71.30.+h Metal-insulator transitions and other electronic transitions

White light source in infrared region from InAs quantum dots grown on (001) InP substrates by droplet heteroepitaxy

R. Oga, W. S. Lee, Y. Fujiwara, and Y. Takeda

Appl. Phys. Lett. 82, 4546 (2003); http://dx.doi.org/10.1063/1.1585138 (3 pages) | Cited 3 times

Online Publication Date: 16 June 2003

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We have observed extremely wide spectral range electroluminescence (EL) from InAs quantum dots (QDs) on (001) InP substrates at room temperature. The InAs QDs were grown by droplet heteroepitaxy using a low-pressure organometallic vapor phase epitaxial system. Room-temperature EL in a very wide wavelength range from 950 to 2200 nm was observed from InAs QDs embedded in InP matrix. The wide range emission indicates that the QDs have white optical gain in the infrared region at room temperature, which can be applied to efficient optical amplifiers for 1.0–1.6 μm fiber communication. © 2003 American Institute of Physics.
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78.67.Hc Quantum dots
68.65.Hb Quantum dots (patterned in quantum wells)
81.07.Ta Quantum dots
81.05.Ea III-V semiconductors
68.55.A- Nucleation and growth
73.21.La Quantum dots
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
42.72.Bj Visible and ultraviolet sources
78.60.Fi Electroluminescence
42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.55.Wd Fiber lasers
81.15.Kk Vapor phase epitaxy; growth from vapor phase
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Surface pattern evolution during thermal Cl2 etching of GaAs(001)

J. H. Schmid, R. Mar, and T. Tiedje

Appl. Phys. Lett. 82, 4549 (2003); http://dx.doi.org/10.1063/1.1584091 (3 pages) | Cited 1 time

Online Publication Date: 16 June 2003

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The evolution of one- and two-dimensional surface gratings during maskless thermal Cl2 etching of GaAs is investigated using atomic force microscopy. It is found that the limiting factor for pattern transfer is the anisotropy of the etch rate with respect to crystal orientation. A simple numerical model based on an interpolation of measured etch rates is presented that can be used to calculate the evolution of surface patterns. © 2003 American Institute of Physics.
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81.05.Ea III-V semiconductors
81.65.Cf Surface cleaning, etching, patterning

Direct measurement of polarization resolved transition dipole moment in InGaAs/GaAs quantum dots

K. L. Silverman, R. P. Mirin, S. T. Cundiff, and A. G. Norman

Appl. Phys. Lett. 82, 4552 (2003); http://dx.doi.org/10.1063/1.1584514 (3 pages) | Cited 26 times

Online Publication Date: 16 June 2003

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The propagation of optical pulses resonant with the ground-to-excited state transition of InGaAs quantum dots is investigated. An analysis of low intensity excitation yields a dipole moment of 8.8×10−29 to 10.9×10−29 C m, depending on the quantum dot growth conditions. We observe polarization of the dipole moment exclusively in the plane perpendicular to the growth direction. © 2003 American Institute of Physics.
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78.67.Hc Quantum dots
78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors
81.05.Ea III-V semiconductors
73.21.La Quantum dots
81.07.Ta Quantum dots
68.37.Lp Transmission electron microscopy (TEM)

Surface morphology control of InAs nanostructures grown on InGaAs/InP

Z. H. Zhang, G. W. Pickrell, K. L. Chang, H. C. Lin, K. C. Hsieh, and K. Y. Cheng

Appl. Phys. Lett. 82, 4555 (2003); http://dx.doi.org/10.1063/1.1584523 (3 pages) | Cited 15 times

Online Publication Date: 16 June 2003

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The evolution of the surface morphology of InAs nanostructures grown on InGaAs/InP by molecular-beam epitaxy was studied through atomic force microscopy imaging. Randomly distributed quantum dots and quantum wires were reproducibly achieved by adjusting proper growth parameters such as InAs deposition thickness, growth temperature, arsenic overpressure, and InAs growth rate. It is observed that a thick InAs layer, high growth temperature, high arsenic overpressure, and high growth rate promote the formation of quantum dots. We propose that when InAs is deposited, the interaction of the total strain in the InAs layer and the surface strain distribution in the underlying matrix layer might be the determinant factor of the nanostructure morphology. Thick InAs, which increases the total strain of the InAs layer, is preferred to form quantum dots. Surface diffusion of In adatoms is another important factor affecting the surface morphology. A high growth temperature promotes homogeneous diffusion, while a high arsenic overpressure and growth rate reduces the surface diffusion of the In adatoms. These factors induce the formation of quantum dots. © 2003 American Institute of Physics.
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68.35.B- Structure of clean surfaces (and surface reconstruction)
68.65.La Quantum wires (patterned in quantum wells)
68.65.Hb Quantum dots (patterned in quantum wells)
81.05.Ea III-V semiconductors
68.47.Fg Semiconductor surfaces
81.07.Ta Quantum dots
81.07.Vb Quantum wires
61.46.-w Structure of nanoscale materials
68.37.Ps Atomic force microscopy (AFM)
68.35.Fx Diffusion; interface formation
68.43.Jk Diffusion of adsorbates, kinetics of coarsening and aggregation
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.35.Gy Mechanical properties; surface strains

Time-delayed indium incorporation in ultrathin (InxGa1−xN/GaN) multiple quantum wells grown by metalorganic vapor phase epitaxy

F. Schulze, J. Bläsing, A. Dadgar, and A. Krost

Appl. Phys. Lett. 82, 4558 (2003); http://dx.doi.org/10.1063/1.1586472 (3 pages) | Cited 7 times

Online Publication Date: 16 June 2003

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InxGa1−xN/GaN multiple quantum wells grown by metalorganic vapor phase epitaxy were investigated by x-ray reflectometry and high-resolution x-ray diffractometry. The combination of both analysis methods allows a very precise determination of the structural parameters of the layer systems. From a systematic variation of the growth temperature from 760 to 840 °C and deposition times from 15 to 200 s, a temperature-dependent time delay of the indium incorporation was observed. Preferentially, at lower growth temperatures, indium seems to be accumulated at the GaN surface before the onset of the InGaN quantum well growth. The growth delay increases with decreasing growth temperature. © 2003 American Institute of Physics.
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81.05.Ea III-V semiconductors
68.65.Fg Quantum wells
81.07.St Quantum wells
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Fano resonances in open quantum dots and their application as spin filters

J. F. Song, Y. Ochiai, and J. P. Bird

Appl. Phys. Lett. 82, 4561 (2003); http://dx.doi.org/10.1063/1.1586788 (3 pages) | Cited 36 times

Online Publication Date: 16 June 2003

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We describe how a spin filter may be realized in open quantum-dot systems, by exploiting the Fano resonances that occur in their transmission characteristics. In quantum dots in which the spin degeneracy of carriers is lifted, we show that the Fano resonances may be used as an effective means to generate spin polarization of transmitted carriers, and that electrical detection of the resulting polarization should also be possible. © 2003 American Institute of Physics.
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72.25.Dc Spin polarized transport in semiconductors
73.21.La Quantum dots
73.63.Kv Quantum dots
85.75.-d Magnetoelectronics; spintronics: devices exploiting spin polarized transport or integrated magnetic fields
73.23.-b Electronic transport in mesoscopic systems

Triangular gallium nitride nanorods

Seung Yong Bae, Hee Won Seo, Jeunghee Park, Hyunik Yang, Hyunsuk Kim, and Sangsig Kim

Appl. Phys. Lett. 82, 4564 (2003); http://dx.doi.org/10.1063/1.1583873 (3 pages) | Cited 32 times

Online Publication Date: 16 June 2003

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Gallium nitride nanorods were synthesized by a chemical vapor deposition using the reaction of gallium/gallium nitride with ammonia. All nanorods have, exclusively, a triangle cross section with an average diameter of 50 nm. They consist of single-crystalline wurtzite structure crystal grown with the [010] direction. X-ray diffraction and Raman spectroscopy data suggest no shift of the lattice constants from those of the bulk. Temperature-dependent photoluminescence exhibits the I2 and free-to-bound emission peaks. The present triangular gallium nitride nanorods would be free from the stress, having the band-gap energy of the bulk. © 2003 American Institute of Physics.
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61.46.-w Structure of nanoscale materials
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.07.Bc Nanocrystalline materials
78.67.Bf Nanocrystals, nanoparticles, and nanoclusters
78.30.Fs III-V and II-VI semiconductors
78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors
81.05.Ea III-V semiconductors
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Controllable electronic structures and related properties in a double-barrier nanoring

Xiquan Yu, Jia-Lin Zhu, and Xiao Hu

Appl. Phys. Lett. 82, 4567 (2003); http://dx.doi.org/10.1063/1.1585136 (3 pages) | Cited 3 times

Online Publication Date: 16 June 2003

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The quantum effects of magnetic flux and in-plane electric field on an electron in a two-dimensional double-barrier nanoring have been studied. It has been found that the electronic structures and the related properties in the ring, such as the polarization, persistent currents, and far-infrared spectroscopy, can be tailored and controlled by the double barriers and the electric field. It may be useful for applications in quantum devices design in the future. © 2003 American Institute of Physics.
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73.23.Ra Persistent currents

Magnetic orderings in Al nanowires suspended between electrodes

Tomoya Ono, Shigeru Tsukamoto, and Kikuji Hirose

Appl. Phys. Lett. 82, 4570 (2003); http://dx.doi.org/10.1063/1.1586459 (3 pages) | Cited 3 times

Online Publication Date: 16 June 2003

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A theoretical analysis of a relation between atomic and spin-electronic structures for the ground state of single-row aluminum nanowires suspended between Al(001) electrodes is demonstrated using first-principles structural optimizations. We obtain an unusual result that a three-aluminum-atom nanowire sandwiched between the electrodes does not manifest magnetic ordering, although an isolated aluminum trimer molecule in a straight line is spin-polarized. On the other hand, a five-atom nanowire exhibits ferromagnetic ordering, where three central atoms form a spin-polarized trimer. Moreover, in the case of an eight-atom nanowire, the middle atoms in the nanowire form two spin-polarized trimers with antiferromagnetic ordering. © 2003 American Institute of Physics.
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75.75.-c Magnetic properties of nanostructures
75.25.-j Spin arrangements in magnetically ordered materials (including neutron and spin-polarized electron studies, synchrotron-source x-ray scattering, etc.)

Field-emission properties of molybdenum disulfide nanotubes

Vincenc Nemanič, Marko Žumer, Bojan Zajec, Jurij Pahor, Maja Remškar, Aleš Mrzel, Peter Panjan, and Dragan Mihailovič

Appl. Phys. Lett. 82, 4573 (2003); http://dx.doi.org/10.1063/1.1586462 (3 pages) | Cited 19 times

Online Publication Date: 16 June 2003

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The field-emission (FE) properties of molybdenum disulfide nanotubes (NTs) are reported for the single-tip geometry. Reproducibly stable FE currents in excess of 10 μA were measured from single NT tips in vacuum of 10−7 mbar. Valuable characteristics of the nanotube material are ease of processing and reproducibility of the FE properties. © 2003 American Institute of Physics.
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79.70.+q Field emission, ionization, evaporation, and desorption
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