APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue

30 Jun 2003

Volume 82, Issue 26, pp. 4633-4843

Issue Cover Spotlight Figure

Appl. Phys. Lett. 82, 4797 (2003); http://dx.doi.org/10.1063/1.1587262 (3 pages)

Ongi Englander, Dane Christensen, and Liwei Lin
Enlarge Image | Read More
Return to All Sections
back to top
RSS Feeds

Effect of electrical doping on molecular level alignment at organic–organic heterojunctions

Weiying Gao and Antoine Kahn

Appl. Phys. Lett. 82, 4815 (2003); http://dx.doi.org/10.1063/1.1585123 (3 pages) | Cited 39 times

Online Publication Date: 24 June 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The effect of electrical doping on the interface molecular level alignment at organic–organic (OO) heterojunctions is studied with ultraviolet photoemission spectroscopy. Interfaces between hole transport layers (HTL) and electron transport layers are investigated as a function of p doping of the HTLs. Doping induces the formation of an interface dipole with corresponding shift in the relative position of molecular levels across the interface. The modification of the OO electronic structure is believed to be due to the presence of doping-induced excess holes at the interface. © 2003 American Institute of Physics.
Show PACS
73.61.Ph Polymers; organic compounds
71.20.Rv Polymers and organic compounds
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
79.60.Fr Polymers; organic compounds

The effect of additional oxidation on the memory characteristics of metal-oxide-semiconductor capacitors with Si nanocrystals

B. Garrido, S. Cheylan, O. González-Varona, A. Pérez-Rodríguez, and J. R. Morante

Appl. Phys. Lett. 82, 4818 (2003); http://dx.doi.org/10.1063/1.1587273 (3 pages) | Cited 15 times

Online Publication Date: 24 June 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Metal-oxide-semiconductor (MOS) capacitors with Si nanocrystals (Si-nc) obtained by ion implantation in SiO2 have been studied for nonvolatile memory applications. The use of a thermal oxide and the accurate tuning of the postimplantation processing conditions allow good integrity, reliability, and high retention times. We propose an additional thermal oxidation step after the formation of the Si-nc. This process has enabled growing a thin tunnel oxide at the Si/SiO2 interface completely free of Si-nc and Si excess, leading to a formidable increase of the retention time. In addition the additional oxidation makes it possible to control the size and density of Si-nc. Finally, we show its impact on the memory characteristics of the nanocrystal device (writing speed and programming window). © 2003 American Institute of Physics.
Show PACS
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
84.32.Tt Capacitors
81.65.Mq Oxidation
81.16.Pr Micro- and nano-oxidation
61.72.up Other materials

Theory of Q control in atomic force microscopy

Tomás R. Rodríguez and Ricardo García

Appl. Phys. Lett. 82, 4821 (2003); http://dx.doi.org/10.1063/1.1584790 (3 pages) | Cited 37 times

Online Publication Date: 24 June 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We discuss the performance of an atomic force microscope (AFM) operated in the amplitude modulation mode under a self-excitation signal, known as quality factor control (Q control). By using the point-mass description of the AFM, we provide a complete description of Q control in tapping mode AFM. The theoretical simulations show three major results: (i) the steady-state motion of the system contains contributions from homogeneous and particular components, (ii) the active response of the microcantilever can be increased or decreased depending on the phase shift of the self-excitation with respect to the instantaneous deflexion, and (iii) in general, Q enhancement reduces the maximum force exerted for the tip on the sample surface. © 2003 American Institute of Physics.
Show PACS
07.79.Lh Atomic force microscopes
68.37.Ps Atomic force microscopy (AFM)

Highly efficient single-layer dendrimer light-emitting diodes with balanced charge transport

Thomas D. Anthopoulos, Jonathan P. J. Markham, Ebinazar B. Namdas, Ifor D. W. Samuel, Shih-Chun Lo, and Paul L. Burn

Appl. Phys. Lett. 82, 4824 (2003); http://dx.doi.org/10.1063/1.1586999 (3 pages) | Cited 51 times

Online Publication Date: 24 June 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
High-efficiency single-layer-solution-processed green light-emitting diodes based on a phosphorescent dendrimer are demonstrated. A peak external quantum efficiency of 10.4% (35 cd/A) was measured for a first generation fac-tris(2-phenylpyridine) iridium cored dendrimer when blended with 4,4′-bis(N-carbazolyl)biphenyl and electron transporting 1,3,5-tris(2-N-phenylbenzimidazolyl)benzene at 8.1 V. A maximum power efficiency of 12.8 lm/W was measured also at 8.1 V and 550 cd/m2. These results indicate that, by simple blending of bipolar and electron-transporting molecules, highly efficient light-emitting diodes can be made employing a very simple device structure. © 2003 American Institute of Physics.
Show PACS
85.60.Jb Light-emitting devices

Improved AlGaN/GaN high electron mobility transistor using AlN interlayers

A. Jiménez, Z. Bougrioua, J. M. Tirado, A. F. Braña, E. Calleja, E. Muñoz, and I. Moerman

Appl. Phys. Lett. 82, 4827 (2003); http://dx.doi.org/10.1063/1.1588379 (3 pages) | Cited 9 times

Online Publication Date: 24 June 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
This work reports on the effects of AlN interlayers embedded into the GaN semi-insulating buffer of AlGaN/GaN high electron mobility transistors, in comparison with standard heterostructures without AlN interlayers. Detailed optical and structural characterization data are presented, along with computer simulation results. The AlN interlayers generate a compressive strain in the GaN topmost layer, which slightly reduces the total polarization field, but most important, it prevents the AlGaN barrier from plastic relaxation. The final result is an enhanced polarization field with respect to standard heterostructures, providing an increased channel carrier density and pinch-off voltage. Electrical characterization confirms the advantages of using AlN interlayers, reaching maximum drain current density and extrinsic transconductance as high as 1.4 A/mm and 266 mS/mm, respectively, for 0.2-μm gate length. © 2003 American Institute of Physics.
Show PACS
85.30.Tv Field effect devices
85.30.De Semiconductor-device characterization, design, and modeling
68.35.Ct Interface structure and roughness
68.35.Gy Mechanical properties; surface strains

Enhanced electroluminescence in silicon-on-insulator metal–oxide–semiconductor transistors with thin silicon layer

Avi Karsenty, Amir Sa’ar, Nissim Ben-Yosef, and Joseph Shappir

Appl. Phys. Lett. 82, 4830 (2003); http://dx.doi.org/10.1063/1.1587877 (3 pages) | Cited 4 times

Online Publication Date: 24 June 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Silicon-on-insulator (SOI) and bulk metal–oxide–semiconductor (MOS) transistors were fabricated simultaneously and tested electrically and optically at room temperature. The electroluminescence (EL) spectrum has been measured in both types of devices. A visible emitted radiation was observed when both devices were operated in the avalanche breakdown mode. In the case of SOI device, five different peaks at a photon energy of 2.31, 2.06, 1.81, 1.63, and 1.50 eV were observed. The regular spacing between the measured peaks indicates cavity effects due to the various layers of the SOI MOS transistor structure. The thin silicon layer thickness of 400 Å seems to be responsible for the factor of about 16 in the EL intensity of the SOI device as compared to the bulk device. © 2003 American Institute of Physics.
Show PACS
85.60.Jb Light-emitting devices
85.30.Tv Field effect devices
73.50.Fq High-field and nonlinear effects
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
Return to All Sections
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close