APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue

30 Jun 2003

Volume 82, Issue 26, pp. 4633-4843

Issue Cover Spotlight Figure

Appl. Phys. Lett. 82, 4797 (2003); http://dx.doi.org/10.1063/1.1587262 (3 pages)

Ongi Englander, Dane Christensen, and Liwei Lin
Enlarge Image | Read More
Return to All Sections
back to top
RSS Feeds

Nucleation and interface formation mechanisms in atomic layer deposition of gate oxides

Martin M. Frank, Yves J. Chabal, and Glen D. Wilk

Appl. Phys. Lett. 82, 4758 (2003); http://dx.doi.org/10.1063/1.1585129 (3 pages) | Cited 54 times

Online Publication Date: 24 June 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We present an in situ infrared spectroscopic study of the interface formation during atomic layer deposition of alternative high-permittivity (high-κ) gate dielectrics. Layer-by-layer oxide growth may be achieved by alternating pulses of a molecular metal precursor (e.g., trimethylaluminum for aluminum oxide growth) and water vapor. Contrary to common belief, we find that the metal precursor, not the oxidizing agent, is the key factor to control Al2O3 nucleation on hydrogen-terminated silicon. Metal surface species catalyze subsurface Si oxidation. These findings have direct implications on growth conditions to optimize semiconductor-dielectric interfaces. © 2003 American Institute of Physics.
Show PACS
68.55.A- Nucleation and growth
81.15.Kk Vapor phase epitaxy; growth from vapor phase
78.66.Nk Insulators
78.30.Hv Other nonmetallic inorganics

Large remanent polarization of 100% polar-axis-oriented epitaxial tetragonal Pb(Zr0.35Ti0.65)O3 thin films

Hitoshi Morioka, Gouji Asano, Takahiro Oikawa, Hiroshi Funakubo, and Keisuke Saito

Appl. Phys. Lett. 82, 4761 (2003); http://dx.doi.org/10.1063/1.1586993 (3 pages) | Cited 41 times

Online Publication Date: 24 June 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
100% polar-axis (c-axis)-oriented epitaxial Pb(Zr0.35Ti0.65)O3 (PZT) thin films were grown and their large remanent polarization (Pr) was directly measured. Perfectly c-axis-oriented epitaxial PZT thin films were obtained on (100)cSrRuO3//(100)SrTiO3 substrates when the deposition temperature increased to 540 °C together with a decrease in the film thickness down to 50 nm. Polarization–electric-field hysteresis loops were well saturated and had a square shape. The Pr of a 50 nm thick film saturated at 0.9 V, and its value was over 90 μC/cm2; almost independent of the measurement frequency within the range from 20 Hz to 1 kHz. This value was in good agreement with the estimated one from the a- and c-axes mixture-oriented epitaxial PZT film having the same composition taking into account the fact that only the c-axis-oriented domain contributed to the polarization. On the other hand, the coercive field value of a perfectly c-axis-oriented film was 140 kV/cm and almost the same as that of the mixture-oriented one having the same film thickness. These results show that PZT has a large Pr applicable for high-density ferroelectric random access memory. © 2003 American Institute of Physics.
Show PACS
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
77.22.Ej Polarization and depolarization
77.80.Dj Domain structure; hysteresis
68.55.-a Thin film structure and morphology
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
85.50.Gk Non-volatile ferroelectric memories

Influence of implantation energy on the electrical properties of ultrathin gate oxides grown on nitrogen implanted Si substrates

E. Kapetanakis, D. Skarlatos, C. Tsamis, P. Normand, and D. Tsoukalas

Appl. Phys. Lett. 82, 4764 (2003); http://dx.doi.org/10.1063/1.1585133 (3 pages) | Cited 3 times

Online Publication Date: 24 June 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Metal–oxide–semiconductor tunnel diodes with gate oxides, in the range of 2.5–3.5 nm, grown either on 25 or 3 keV nitrogen-implanted Si substrates at (0.3 or 1) ×1015 cm−2 dose, respectively, are investigated. The dependence of N2+ ion implant energy on the electrical quality of the growing oxide layers is studied through capacitance, equivalent parallel conductance, and gate current measurements. Superior electrical characteristics in terms of interface state trap density, leakage current, and breakdown fields are found for oxides obtained through 3 keV nitrogen implants. These findings together with the full absence of any extended defect in the silicon substrate make the low-energy nitrogen implantation technique an attractive option for reproducible low-cost growth of nanometer-thick gate oxides. © 2003 American Institute of Physics.
Show PACS
73.61.Ng Insulators
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)
61.72.uf Ge and Si
61.80.Jh Ion radiation effects
61.82.Fk Semiconductors
85.40.Ry Impurity doping, diffusion and ion implantation technology
73.20.At Surface states, band structure, electron density of states

Dielectric and transverse piezoelectric properties of sol-gel-derived (001) Pb[Yb1/2Nb1/2]O3–PbTiO3 epitaxial thin films

Q. F. Zhou, Q. Q. Zhang, T. Yoshimura, and S. Trolier-McKinstry

Appl. Phys. Lett. 82, 4767 (2003); http://dx.doi.org/10.1063/1.1581366 (3 pages) | Cited 14 times

Online Publication Date: 24 June 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
(1−x)Pb[Yb1/2Nb1/2]O3–xPbTiO3 (PYbN–PT, x = 0.5) epitaxial thin films were deposited on (001) SrRuO3/(001) MgO substrates by sol-gel processing. X-ray diffraction analysis revealed that the films were pyrochlore-free (001) epitaxial films when crystallized at 750 °C for 1 min. The dielectric permittivity and loss factor varied only slightly with frequency in the range of 100 to 10 000 Hz. At 1 kHz, the dielectric permittivity was 870 and the dielectric loss was 0.03 at room temperature. Compared with (111) PYbN–PT films, (001) PYbN–PT films exhibited better ferroelectric and piezoelectric properties. The remanent polarization (Pr) was 37 μC/cm2. The effective transverse piezoelectric e31,f coefficient of the films were −10.2 C/m2 when films were poled at room temperature. Enhanced piezoelectric properties were obtained using unique two-step method poling the PYbN–PT films at higher temperatures. © 2003 American Institute of Physics.
Show PACS
77.55.-g Dielectric thin films
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.65.-j Piezoelectricity and electromechanical effects
77.22.Ch Permittivity (dielectric function)
77.22.Gm Dielectric loss and relaxation
77.22.Ej Polarization and depolarization

Ferroelectric field-effect transistor with a SrRuxTi1−xO3 channel

A. G. Schrott, J. A. Misewich, V. Nagarajan, and R. Ramesh

Appl. Phys. Lett. 82, 4770 (2003); http://dx.doi.org/10.1063/1.1588753 (3 pages) | Cited 18 times

Online Publication Date: 24 June 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
A ferroelectric field-effect transistor with a SrRuxTi1−xO3 solid-solution channel layer and a lead zirconate titanate gate oxide has been fabricated. The remnant polarization of the ferroelectric yields two states at 0 V, which produce a relative change in channel resistance (ΔR/R) of 75% and a coercivity of 3 V. The channel has sufficient off-state free carrier concentration to provide sufficient balancing charge for ferroelectric stability. The device was subjected to more than 1010 read-write cycles with no degradation. This nonvolatile device offers the possibility of a nondestructive, current sense memory cell with good retention properties. © 2003 American Institute of Physics.
Show PACS
85.50.Gk Non-volatile ferroelectric memories
85.30.Tv Field effect devices
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
84.30.Sk Pulse and digital circuits
77.22.Ej Polarization and depolarization

B-site disordering in Pb(Sc1/2Ta1/2)O3 by mechanical activation

X. S. Gao, J. M. Xue, J. Wang, T. Yu, and Z. X. Shen

Appl. Phys. Lett. 82, 4773 (2003); http://dx.doi.org/10.1063/1.1581384 (3 pages) | Cited 3 times

Online Publication Date: 24 June 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
B-site disorder in Pb(Sc1/2Ta1/2)O3 (PST) is traditionally tailored by thermal annealing after sintering at elevated temperatures. In this letter, we report B-site disordering in PST triggered by mechanical activation (MA), and the resulting ferroelectric behaviors thus derived. MA induces B-site order–disorder transformation in PST, and more interestingly, the structural disorder can well be retained in sintered PST, leading to a change in ferroelectric transition behavior (e.g., from a normal ferroelectric to relaxor) and a shift in Curie temperature. A designed degree of disorder in PST can therefore be obtained by the effective combination of presinter MA and subsequent sintering, giving rise to the specific ferroelectric properties that are required for certain applications. © 2003 American Institute of Physics.
Show PACS
77.80.B- Phase transitions and Curie point
64.70.K- Solid-solid transitions
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
81.20.Ev Powder processing: powder metallurgy, compaction, sintering, mechanical alloying, and granulation
Return to All Sections
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close