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30 Jun 2003

Volume 82, Issue 26, pp. 4633-4843

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Appl. Phys. Lett. 82, 4797 (2003); http://dx.doi.org/10.1063/1.1587262 (3 pages)

Ongi Englander, Dane Christensen, and Liwei Lin
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Temperature dependence of the energy gap and free carrier absorption in bulk InAs0.05Sb0.95 single crystals

Bhavtosh Bansal, V. K. Dixit, V. Venkataraman, and H. L. Bhat

Appl. Phys. Lett. 82, 4720 (2003); http://dx.doi.org/10.1063/1.1587002 (3 pages) | Cited 4 times

Online Publication Date: 24 June 2003

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Temperature dependence of the energy gap and free carrier absorption in a high-quality InAs0.05Sb0.95 single crystal was studied between 90 K and 430 K through the absorption spectra. At this alloy concentration, the room-temperature energy gap was measured to be 0.15 eV. Varshni- and the Bose–Einstein-type fit parameters were obtained from the measured temperature dependence of the energy gap, and the latter gave the zero-temperature gap to be 0.214 eV. It was found that although Weider’s empirical formula for the dependence of the energy gap on temperature and the alloy concentration agrees with the value of the gap at room temperature, it is inaccurate in describing its temperature dependence. From the free carrier absorption measurements, the phonon limited cross section of 7.35×10−16 cm2 at 15 μm was deduced at room temperature. © 2003 American Institute of Physics.
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78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
78.40.Fy Semiconductors
63.20.-e Phonons in crystal lattices

Experimental determination of electron and hole mean drift distance: Application to chemical vapor deposition diamond

Marco Marinelli, E. Milani, G. Pucella, A. Tucciarone, G. Verona-Rinati, M. Angelone, and M. Pillon

Appl. Phys. Lett. 82, 4723 (2003); http://dx.doi.org/10.1063/1.1586475 (3 pages) | Cited 3 times

Online Publication Date: 24 June 2003

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A simple technique for measuring the electron and hole mean drift distance in chemical vapor deposition polycrystalline diamond in the as-grown and in the so-called pumped state obtained by 90Sr β-particle irradiation is presented. To this purpose, the efficiency η of a diamond-based particle detector was measured using a 5.5-MeV 241Am α-particle source. In particular, two different experimental setups were specifically designed and realized in order to perform a systematic study of the device efficiency as a function of the α-particle penetration depth, both in the positive and negative bias polarization. In the first setup, air is used as an absorbing layer in order to change the energy of the impinging α particles, while in the second one, the measurements were performed in vacuum and the incidence angle was varied in the 0°–80° range. The advantages of the latter setup are evidenced. The theoretical formula for the mean drift distances of carriers is derived using a properly modified Hecht model, and fitted to the data, allowing a separate evaluation of the charge collection distances of each carrier type (λe = μeτeE and λh = μhτhE). The obtained results unambiguously show that the pumping process is much more effective on hole conduction, λh being much greater than λe in the pumped state. © 2003 American Institute of Physics.
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29.40.Wk Solid-state detectors
61.82.Fk Semiconductors
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
73.61.Cw Elemental semiconductors
61.80.Fe Electron and positron radiation effects

IrO2 Schottky contact on n-type 4H-SiC

Sang Youn Han, Ho Won Jang, and Jong-Lam Lee

Appl. Phys. Lett. 82, 4726 (2003); http://dx.doi.org/10.1063/1.1588365 (3 pages)

Online Publication Date: 24 June 2003

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A thermally stable IrO2 Schottky contact on n-type 4H-SiC was achieved by annealing an Ir contact under O2 ambient. The IrO2 contact exhibited a high Schottky barrier height of 2.22 eV and low reverse leakage current. Little degradation in Schottky barrier height was observed even after annealing at 450 °C for 24 h under atmospheric air. The oxidation annealing transformed the Ir layer into IrO2, resulting in the increase in the work function of the contact layer. Simultaneously, Si atoms diffused out, leaving the Si vacancy below the contact. These played a role in forming a thermally stable Schottky contact with a high Schottky barrier height. © 2003 American Institute of Physics.
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73.30.+y Surface double layers, Schottky barriers, and work functions
61.72.Cc Kinetics of defect formation and annealing
68.60.Dv Thermal stability; thermal effects
81.65.Mq Oxidation
68.35.Fx Diffusion; interface formation
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