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13 Jan 2003

Volume 82, Issue 2, pp. 155-309

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Appl. Phys. Lett. 82, 266 (2003); http://dx.doi.org/10.1063/1.1535271 (3 pages)

Jan Genzer, Daniel A. Fischer, and Kirill Efimenko
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Inverted top-emitting organic light-emitting diodes using sputter-deposited anodes

T. Dobbertin, M. Kroeger, D. Heithecker, D. Schneider, D. Metzdorf, H. Neuner, E. Becker, H.-H. Johannes, and W. Kowalsky

Appl. Phys. Lett. 82, 284 (2003); http://dx.doi.org/10.1063/1.1535743 (3 pages) | Cited 57 times

Online Publication Date: 6 January 2003

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We demonstrate vacuum-sublimed topside-emitting inverted organic light-emitting diodes (IOLEDs) employing low-power radio-frequency magnetron sputter-deposited indium tin oxide (ITO) anodes. The device introduces a two-step sputtering sequence to reduce damage incurred by the sputtering process, paired with a buffer- and hole-transporting material Pentacene. Systematic optimization of the organic growth sequence focused on device performance characterized by current and luminous efficiencies, suggest the incorporation of rather thick Pentacene layers. The optimized thickness is obtained as a trade-off between light absorption and protective properties of Pentacene. The optically and electrically undoped organic multilayer devices capped with 90-nm ITO exhibit high current efficiencies of 3.9 cd/A at a raised luminance level of 1.500 cd/m2, combined with luminous efficiencies of 0.7 lm/W. The inverted configuration allows for integration of organic light-emitting diodes (OLEDs) with preferentially used n-channel field-effect transistors for driver backplanes in active matrix OLED displays. © 2003 American Institute of Physics.
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85.60.Jb Light-emitting devices
85.60.Pg Display systems
81.15.Cd Deposition by sputtering
42.79.Kr Display devices, liquid-crystal devices

Understanding shunting behavior in hot-wire-deposited amorphous silicon solar cells

M. K. van Veen and R. E. I. Schropp

Appl. Phys. Lett. 82, 287 (2003); http://dx.doi.org/10.1063/1.1536710 (3 pages) | Cited 3 times

Online Publication Date: 6 January 2003

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Amorphous silicon solar cells, in which the absorbing layer is deposited using the hot-wire chemical vapor deposition (CVD) technique, have potential advantages over solar cells made with the standard plasma enhanced CVD technique. Although it is possible to make high-quality solar cells, many cells occasionally show shunting behavior and better control over the variation in cell performance must be obtained. In this letter, we prove that this behavior is directly correlated with the filament age, and we present different methods for avoiding shunted cells and for improving the reproducibility of cell performance. © 2003 American Institute of Physics.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.05.Gc Amorphous semiconductors
84.60.Jt Photoelectric conversion
68.55.-a Thin film structure and morphology
73.61.Jc Amorphous semiconductors; glasses

AlN/diamond heterojunction diodes

C. R. Miskys, J. A. Garrido, C. E. Nebel, M. Hermann, O. Ambacher, M. Eickhoff, and M. Stutzmann

Appl. Phys. Lett. 82, 290 (2003); http://dx.doi.org/10.1063/1.1532545 (3 pages) | Cited 30 times

Online Publication Date: 6 January 2003

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An aluminum nitride/diamond p–n heterojunction has been realized by plasma-induced molecular-beam epitaxy growth of AlN on (100) diamond. The epitaxial nature of this heterojunction has been confirmed by high-resolution x-ray diffraction. The silicon-doped AlN film (n-type) on the natural boron-doped (p-type) diamond substrate formed a heterobipolar diode with good rectifying properties and surprisingly efficient light emission in the spectral range from 2.7 to 4.8 eV under forward bias. Results concerning the structural, electrical, and optical characterization of the AlN/diamond heterojunction are reported in this letter. © 2003 American Institute of Physics.
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85.60.Jb Light-emitting devices
81.05.Ea III-V semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
85.30.Kk Junction diodes

Capacitively coupled hot-electron nanobolometer as far-infrared photon counter

Dragoş-Victor Anghel and Leonid Kuzmin

Appl. Phys. Lett. 82, 293 (2003); http://dx.doi.org/10.1063/1.1536728 (3 pages) | Cited 7 times

Online Publication Date: 6 January 2003

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We show theoretically that hot-electron nanobolometers consisting of a small piece of normal metal, capacitively coupled to a superconducting antenna through a pair of normal metal–insulator–superconductor (NIS) tunnel junctions may be used as far-infrared photon counters. To make the device most effective at high counting rates, we suggest the use of the bolometer in the simplest configuration, when the NIS tunnel junctions are used as both an electron cooler and thermometer. The absorbtion of the photon in the normal metal produces a pulse in the electron temperature, which is measured by the NIS junctions. The counter may resolve photons up to 0.3–0.4 mm wavelength and has a typical re-equilibration time constant of about 20 ns. © 2003 American Institute of Physics.
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85.25.Pb Superconducting infrared, submillimeter and millimeter wave detectors
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
85.25.Cp Josephson devices
74.25.N- Response to electromagnetic fields

Damage coefficient in high-temperature particle- and γ-irradiated silicon p–i–n diodes

H. Ohyama, K. Takakura, K. Hayama, Satoshi Kuboyama, Yasushi Deguchi, Sumio Matsuda, E. Simoen, and C. Claeys

Appl. Phys. Lett. 82, 296 (2003); http://dx.doi.org/10.1063/1.1536715 (3 pages) | Cited 1 time

Online Publication Date: 6 January 2003

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The impact of high-temperature neutron, electron, and γ-irradiations on the dark current of silicon p–i–n junctions is described in terms of a damage coefficient KI. It is shown that this KI is thermally activated and reduces for increasing irradiation temperature. The same activation energy is retrieved when studying the isochronal annealing behavior of a set of room-temperature irradiated diodes. This leads to a simple method to predict the high-temperature KI from only room-temperature irradiations combined with a thermal annealing study. © 2003 American Institute of Physics.
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85.30.Kk Junction diodes
61.82.Fk Semiconductors
61.80.Ed γ-ray effects
61.80.Hg Neutron radiation effects
61.80.Fe Electron and positron radiation effects
85.30.De Semiconductor-device characterization, design, and modeling
61.72.Cc Kinetics of defect formation and annealing

Increased efficiency in vertically segregated thin-film conjugated polymer blends for light-emitting diodes

N. Corcoran, A. C. Arias, J. S. Kim, J. D. MacKenzie, and R. H. Friend

Appl. Phys. Lett. 82, 299 (2003); http://dx.doi.org/10.1063/1.1537049 (3 pages) | Cited 50 times

Online Publication Date: 6 January 2003

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The effect of film morphology on the performance of conjugated polymer-blend light-emitting diodes (LEDs) has been investigated. Vertically segregated structures have been fabricated by varying the spinning conditions and solvents used so that phase separation normal to the substrate is induced. External quantum efficiencies show that LEDs made with vertically segregated structures are between 25% and 100% more efficient than laterally segregated LEDs, depending on the scale of lateral phase separation. © 2003 American Institute of Physics.
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85.60.Jb Light-emitting devices
68.55.-a Thin film structure and morphology
64.75.-g Phase equilibria

A general relation between the ranges of stability of electrostatic actuators under charge or voltage control

Ofir Bochobza-Degani, David Elata, and Yael Nemirovsky

Appl. Phys. Lett. 82, 302 (2003); http://dx.doi.org/10.1063/1.1536251 (3 pages) | Cited 8 times

Online Publication Date: 6 January 2003

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Pull-in instability is a crucial effect in electrostatically-actuated microelectromechanical devices. This phenomenon was recently shown to occur under both voltage and charge control. So far, for all known cases, it has been shown that, under charge excitation, electrostatic actuators have a larger range of stability than under voltage excitation. No counter-examples are known, and whether this is a general rule for electrostatic actuators is an open question. In this work, a general proof is presented that shows this is indeed a fundamental rule for general electrostatic actuators. © 2003 American Institute of Physics.
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85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices
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