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13 Jan 2003

Volume 82, Issue 2, pp. 155-309

Issue Cover Spotlight Figure

Appl. Phys. Lett. 82, 266 (2003); http://dx.doi.org/10.1063/1.1535271 (3 pages)

Jan Genzer, Daniel A. Fischer, and Kirill Efimenko
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Random spin–orbit coupling and spin relaxation in symmetric quantum wells

E. Ya. Sherman

Appl. Phys. Lett. 82, 209 (2003); http://dx.doi.org/10.1063/1.1533839 (3 pages) | Cited 40 times

Online Publication Date: 6 January 2003

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The effective “spin–orbit” field acting upon spins of carriers in two-dimensional electronic structures (the Rashba field) arises due to the spatial asymmetry of the system. It will be shown in this letter that even in quantum wells with perfectly symmetric environment, a random Rashba field arises due to fluctuations of concentration of dopant ions. The magnitude of the field, its correlation function, and electron spin relaxation rate in this field are presented. © 2003 American Institute of Physics.
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73.21.Fg Quantum wells
71.70.Ej Spin-orbit coupling, Zeeman and Stark splitting, Jahn-Teller effect
73.20.Fz Weak or Anderson localization

Bulk-grain resistivity and positive temperature coefficient of ZnO-based varistors

D. Fernández-Hevia, J. de Frutos, A. C. Caballero, and J. F. Fernández

Appl. Phys. Lett. 82, 212 (2003); http://dx.doi.org/10.1063/1.1534620 (3 pages) | Cited 12 times

Online Publication Date: 6 January 2003

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We analyze the conditions that allow the bulk-grain regions of a polycrystalline semiconductor to be explored through electrical measurements. The temperature dependence of grain resistivity in ZnO varistors (300–430 K) is presented, and a positive temperature coefficient is found. This is consistent with a free-carrier density approaching exhaustion, and an electron mobility controlled mainly by lattice (both optical and acoustical) scattering. No grain conductivity activation energy is to be found above room temperature and, therefore, ac-impedance techniques can be inadequate for the evaluation of grain conductivity and shallow donor activation energy. © 2003 American Institute of Physics.
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84.32.Ff Conductors, resistors (including thermistors, varistors, and photoresistors)
85.30.Fg Bulk semiconductor and conductivity oscillation devices (including Hall effect devices, space-charge-limited devices, and Gunn effect devices)
72.80.Ey III-V and II-VI semiconductors

Enhanced low temperature electrical activation of B in Si

Ramki Kalyanaraman, V. C. Venezia, L. Pelaz, T. E. Haynes, H.-J. L. Gossmann, and C. S. Rafferty

Appl. Phys. Lett. 82, 215 (2003); http://dx.doi.org/10.1063/1.1535270 (3 pages) | Cited 11 times

Online Publication Date: 6 January 2003

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The electrical activation of B in n-type epitaxial-Si(100) has been enhanced in the temperature range of 400–800 °C. This enhanced activation was measured for 40 keV, 2×1014 cm−2 dose of B implanted into a vacancy-rich Si region. The vacancy-rich region consists of excess vacancies (Vex) generated by a 2 MeV Si implant in the dose range of 3×1015–10×1015 cm−2. The B activation in vacancy-rich Si is found to be a factor of ∼2.4 larger with up to ∼80% of the B activated as compared to similar B implant and activation anneals carried out in the bulk Si. The dependence of B activation on Vex concentration shows that the active B concentration increases with the Vex concentration. From this dependence it was estimated that at least three vacancies are required to activate an additional B atom. This process is distinctly different from the low temperature activation that occurs during solid-phase epitaxial recrystallization of B-doped amorphous Si as no amorphous Si is produced during any step. This low temperature processing will be advantageous in situations where the epitaxial recrystallization of a doped amorphous Si layer is not possible, for instance in the fabrication of fully depleted Si-on-insulator devices. © 2003 American Institute of Physics.
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71.55.Cn Elemental semiconductors
61.72.uf Ge and Si
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
61.72.Yx Interaction between different crystal defects; gettering effect
61.72.Cc Kinetics of defect formation and annealing
61.72.J- Point defects and defect clusters

Interface properties of thermally oxidized n-GaN metal–oxide–semiconductor capacitors

Yoshitaka Nakano and Takashi Jimbo

Appl. Phys. Lett. 82, 218 (2003); http://dx.doi.org/10.1063/1.1536029 (3 pages) | Cited 27 times

Online Publication Date: 6 January 2003

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We report on the interface properties of thermally oxidized n-GaN metal–oxide–semiconductor capacitors fabricated on sapphire substrates. 100-nm-thick β-Ga2O3 was grown by dry oxidation at 880 °C for 5 h. From secondary ion mass spectrometry measurements, an intermediate Ga oxynitride layer with graded compositions is clearly observed at the β-Ga2O3/GaN interface. Capacitance–voltage measurements show a deep depletion feature and a low interface state density of ∼ 5.5×1010 eV−1 cm−2. Additionally, no discrete interface traps can be detected by deep-level transient spectroscopic measurements. These results indicate that the surface Fermi level is unpinned at the β-Ga2O3/GaN interface, which may be associated with the presence of the interfacial Ga oxynitride layer. © 2003 American Institute of Physics.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
84.32.Tt Capacitors
85.30.Tv Field effect devices
71.55.Eq III-V semiconductors

Proposal for all-electrical measurement of T1 in semiconductors

Igor Žutić, Jaroslav Fabian, and S. Das Sarma

Appl. Phys. Lett. 82, 221 (2003); http://dx.doi.org/10.1063/1.1536270 (3 pages) | Cited 22 times

Online Publication Date: 6 January 2003

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In an inhomogeneously-doped magnetic semiconductor, spin relaxation time T1 can be determined by all-electrical measurements. Nonequilibrium spin injected in a magnetic p–n junction gives rise to the spin-voltaic effect, in which the nonequilibrium spin-induced charge current is very sensitive to T1 and can flow even at no applied bias. It is proposed that T1 can be determined by measuring the I–V characteristics in such a geometry. In a magnetic p–n junction, for which the results can be calculated analytically, it is also possible to extract the g-factor and the degree of injected-carrier spin polarization. © 2003 American Institute of Physics.
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72.25.Dc Spin polarized transport in semiconductors
75.50.Pp Magnetic semiconductors
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
72.25.Mk Spin transport through interfaces
71.18.+y Fermi surface: calculations and measurements; effective mass, g factor

High-efficiency screen-printed silicon ribbon solar cells by effective defect passivation and rapid thermal processing

Ajeet Rohatgi and Ji-Weon Jeong

Appl. Phys. Lett. 82, 224 (2003); http://dx.doi.org/10.1063/1.1536027 (3 pages) | Cited 11 times

Online Publication Date: 6 January 2003

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A conversion efficiency of 15.9% has been achieved on low-cost edge-defined film-fed grown silicon ribbon solar cells. This represents an improvement over the previously reported efficiencies for silicon ribbon solar cells with manufacturable screen-printed contacts and single layer silicon nitride (SiNx) antireflection coating. Two separate rapid thermal processing cycles with fast ramp-up and cooling rates contributed to the enhancement in cell efficiency. The fast ramp-up rate improved the quality of back surface field and contacts; and a short firing time with a fast cooling rate improved contacts and the SiNx-induced hydrogen passivation of defects, resulting in bulk lifetime enhancement from ∼2 to ∼50 μs. © 2003 American Institute of Physics.
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84.60.Jt Photoelectric conversion
81.65.Rv Passivation
61.72.Cc Kinetics of defect formation and annealing
81.05.Cy Elemental semiconductors

Influence of polarization charges in Al0.4Ga0.6N/GaN barrier varactors

M. Saglam, K. Mutamba, A. Megej, C. Sydlo, H. L. Hartnagel, and I. Daumiller

Appl. Phys. Lett. 82, 227 (2003); http://dx.doi.org/10.1063/1.1537516 (3 pages) | Cited 1 time

Online Publication Date: 6 January 2003

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In this letter, we investigate the influence of polarization charges on the characteristics of metal–organic chemical-vapor-deposition-grown Al0.4Ga0.6N/GaN heterostructure barrier varactors (HBVs). The current–voltage and capacitance–voltage characteristics of the AlGaN/GaN HBVs shift asymmetrically due to the combination of piezoelectric (stress-induced) and spontaneous polarization effects in the barriers. Depending on the polarization of the bias voltage, different values of capacitance modulation, 1.4 for negative bias and 1.1 for positive bias, are observed. The obtained measurement results are supported by a theoretical analysis involving polarization charges at layer interfaces as well as their effect on the barrier height and the width of the depletion region. © 2003 American Institute of Physics.
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73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.20.At Surface states, band structure, electron density of states
81.05.Ea III-V semiconductors
84.32.Tt Capacitors
85.30.Kk Junction diodes
77.22.Ej Polarization and depolarization
77.65.Ly Strain-induced piezoelectric fields
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