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13 Jan 2003

Volume 82, Issue 2, pp. 155-309

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Appl. Phys. Lett. 82, 266 (2003); http://dx.doi.org/10.1063/1.1535271 (3 pages)

Jan Genzer, Daniel A. Fischer, and Kirill Efimenko
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Dual accumulation and depletion behaviors of the arsenic precipitation in low-temperature-grown Be delta-doped GaAs

J. H. Huang, L. Z. Hsieh, X. J. Guo, and Y. O. Su

Appl. Phys. Lett. 82, 305 (2003); http://dx.doi.org/10.1063/1.1536248 (3 pages) | Cited 2 times

Online Publication Date: 6 January 2003

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The precipitation of arsenic in annealed Be delta-doped GaAs grown by low-temperature molecular-beam epitaxy has been studied using transmission electron microscopy. It was found that the planes doped with [Be] = 1.0×1014 cm−2 always accumulate As precipitates, while the planes doped with [Be] = 1×1013 cm−2 tend to deplete As precipitates. In contrast, the planes doped with [Be] = 3 and 2×1013 cm−2 exhibit a weak accumulation property when annealed at 700 °C, but a depletion property when annealed 800 °C. The existence of twins and/or precipitates around the [Be] = 1.0×1014 cm−2 doped planes found in the as-grown sample suggests a strain-induced mechanism to account for the As precipitates accumulation on these planes. © 2003 American Institute of Physics.
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68.55.-a Thin film structure and morphology
64.75.-g Phase equilibria
61.72.Cc Kinetics of defect formation and annealing
68.37.Lp Transmission electron microscopy (TEM)
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
61.72.Mm Grain and twin boundaries
68.60.Bs Mechanical and acoustical properties
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