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13 Jan 2003

Volume 82, Issue 2, pp. 155-309

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Appl. Phys. Lett. 82, 266 (2003); http://dx.doi.org/10.1063/1.1535271 (3 pages)

Jan Genzer, Daniel A. Fischer, and Kirill Efimenko
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Magneto-optical imaging with diluted magnetic semiconductor quantum wells

C. Gourdon, V. Jeudy, M. Menant, D. Roditchev, Le Anh Tu, E. L. Ivchenko, and G. Karczewski

Appl. Phys. Lett. 82, 230 (2003); http://dx.doi.org/10.1063/1.1534617 (3 pages) | Cited 11 times

Online Publication Date: 6 January 2003

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Heterostructures containing CdMnTe-diluted magnetic semiconductor quantum wells are proposed as magneto-optic layers (MOL) for high-resolution Faraday microscopy at low temperature. The Faraday rotation is enhanced up to 54.4 deg T−1 by embedding the quantum wells in a semiconductor–metal optical cavity. These MOL allowed the observation of the intermediate state pattern in a superconductor layer with spatial and magnetic resolutions of 1 μm and 10 mT, respectively. © 2003 American Institute of Physics.
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78.67.De Quantum wells
78.20.Ls Magneto-optical effects
07.79.Pk Magnetic force microscopes
78.66.Hf II-VI semiconductors
73.40.Ns Metal-nonmetal contacts
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Nearly total spin polarization in La2/3Sr1/3MnO3 from tunneling experiments

M. Bowen, M. Bibes, A. Barthélémy, J.-P. Contour, A. Anane, Y. Lemaître, and A. Fert

Appl. Phys. Lett. 82, 233 (2003); http://dx.doi.org/10.1063/1.1534619 (3 pages) | Cited 279 times

Online Publication Date: 6 January 2003

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We have performed magnetotransport measurements on La2/3Sr1/3MnO3/SrTiO3/La2/3Sr1/3MnO3 magnetic tunnel junctions. A magnetoresistance ratio of more than 1800% is obtained at 4 K, from which we infer an electrode spin polarization of at least 95%. This result strongly underscores the half-metallic nature of mixed-valence manganites and demonstrates their capability as a spin analyzer. The magnetoresistance extends up to temperatures of more than 270 K. We argue that these improvements over most previous works may result from optimizing the patterning process for oxide heterostructures. © 2003 American Institute of Physics.
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75.47.Lx Magnetic oxides
75.30.Mb Valence fluctuation, Kondo lattice, and heavy-fermion phenomena
72.25.Mk Spin transport through interfaces
75.45.+j Macroscopic quantum phenomena in magnetic systems

Ion beam synthesis of superconducting MgB2 thin films

Nianhua Peng, G. Shao, C. Jeynes, R. P. Webb, R. M. Gwilliam, G. Boudreault, D. M. Astill, and W. Y. Liang

Appl. Phys. Lett. 82, 236 (2003); http://dx.doi.org/10.1063/1.1537870 (3 pages) | Cited 11 times

Online Publication Date: 6 January 2003

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Superconducting MgB2 thin films have been fabricated by 80 keV 11B ion implantation into commercial Mg ribbon with 11B doses up to 1018 ions/cm2, followed by thermal annealing at 500 °C. Temperature dependent dc magnetization measurements confirmed superconducting phase transitions between 11 and 18 K for samples containing nanocrystalline MgB2 grains embedded in Mg substrate with a small amount of MgO inclusion. © 2003 American Institute of Physics.
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68.55.-a Thin film structure and morphology
61.72.up Other materials
74.78.-w Superconducting films and low-dimensional structures
74.70.Ad Metals; alloys and binary compounds (including A15, MgB2, etc.)
74.25.Ha Magnetic properties including vortex structures and related phenomena
61.80.Jh Ion radiation effects
61.72.Cc Kinetics of defect formation and annealing
81.40.Gh Other heat and thermomechanical treatments
74.10.+v Occurrence, potential candidates
68.37.Lp Transmission electron microscopy (TEM)
61.46.-w Structure of nanoscale materials
61.82.Rx Nanocrystalline materials
74.78.Na Mesoscopic and nanoscale systems
81.07.Bc Nanocrystalline materials
61.72.Qq Microscopic defects (voids, inclusions, etc.)

Ferromagnetism in Mn-implanted ZnO:Sn single crystals

D. P. Norton, S. J. Pearton, A. F. Hebard, N. Theodoropoulou, L. A. Boatner, and R. G. Wilson

Appl. Phys. Lett. 82, 239 (2003); http://dx.doi.org/10.1063/1.1537457 (3 pages) | Cited 217 times

Online Publication Date: 6 January 2003

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We have investigated the magnetic properties of Mn-implanted n-type ZnO single crystals that are codoped with Sn. Theory predicts that room-temperature carrier-mediated ferromagnetism should be possible in manganese-doped p-type ZnO, although Mn-doped n-type ZnO should not be ferromagnetic. While previous efforts report only low-temperature ferromagnetism in Mn-doped ZnO that is n type via shallow donors, we find evidence for ferromagnetism with a Curie temperature of ∼250 K in ZnO that is codoped with Mn and Sn. As a 4+ valence cation, Sn should behave as a doubly ionized donor, thus introducing states deep in the gap. Hysteresis is clearly observed in magnetization versus field curves. Differences in zero-field-cooled and field-cooled magnetization persists up to ∼250 K for Sn-doped ZnO crystals implanted with 3 at. % Mn. Increasing the Mn concentration to 5 at. % significantly reduces the magnetic hysteresis. This latter observation is inconsistent with the origin for ferromagnetism being due to segregated secondary phases, and strongly suggests that a near-room-temperature dilute magnetic semiconducting oxide has been realized. Based on these results, ZnO doped with Mn and Sn may prove promising as a ferromagnetic semiconductor for spintronics. © 2003 American Institute of Physics.
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75.50.Dd Nonmetallic ferromagnetic materials
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
75.50.Pp Magnetic semiconductors
75.30.Kz Magnetic phase boundaries (including classical and quantum magnetic transitions, metamagnetism, etc.)
71.55.Gs II-VI semiconductors

Giant anisotropic magnetostriction in Pr0.5Sr0.5MnO3

R. Mahendiran, M. R. Ibarra, C. Marquina, B. Garcia-Landa, L. Morellon, A. Maignan, B. Raveau, A. Arulraj, and C. N. R. Rao

Appl. Phys. Lett. 82, 242 (2003); http://dx.doi.org/10.1063/1.1537454 (3 pages) | Cited 7 times

Online Publication Date: 6 January 2003

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We show that the polycrystalline perovskite antiferromagnet Pr0.5Sr0.5MnO3 exhibits a giant anisotropic magnetostriction (λt = 1.5×10−3 at T = 25 K and H = 14.2 T) contrary to much smaller λt (<0.1×10−3) found in most other three-dimensional manganites. The value of λt decreases rapidly as the Néel temperature is approached from below, but an unusually high value of λt is also found below the ferromagnetic Curie temperature. We suggest that the magnetic-field-induced antiferromagnetic-to-ferromagnetic transition is accompanied by a structural transition from orthorhombic to tetragonal symmetry and attribute the giant anisotropic effect to the preferential growth of the orbital disordered tetragonal (ferromagnetic) domains along the field direction in the eg-dx2−y2 orbital ordered orthorhombic (antiferromagnetic) matrix. © 2003 American Institute of Physics.
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75.80.+q Magnetomechanical effects, magnetostriction
75.30.Gw Magnetic anisotropy
75.30.Kz Magnetic phase boundaries (including classical and quantum magnetic transitions, metamagnetism, etc.)
75.40.-s Critical-point effects, specific heats, short-range order
64.70.K- Solid-solid transitions
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