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20 Jan 2003

Volume 82, Issue 3, pp. 313-483

Issue Cover Spotlight Figure

Appl. Phys. Lett. 82, 370 (2003); http://dx.doi.org/10.1063/1.1537514 (3 pages)

Jan Schroers, Chris Veazey, and William L. Johnson
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Large area, high resolution, dry printing of conducting polymers for organic electronics

Graciela B. Blanchet, Yueh-Lin Loo, J. A. Rogers, F. Gao, and C. R. Fincher

Appl. Phys. Lett. 82, 463 (2003); http://dx.doi.org/10.1063/1.1533110 (3 pages) | Cited 118 times

Online Publication Date: 15 January 2003

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We show here that thermal imaging, a nonlithographic technique which enables printing multiple, successive layers via a dry additive process can be used in combination with tailored printable conductors in the fabrication of organic electronic devices. This method is capable of patterning a range of organic materials at high speed over large areas with micron size resolution and excellent electrical performance avoiding the solvent compatibility issues currently faced by alternative techniques. Such a dry, potentially reel-to-reel printing method may provide a practical route to realizing the expected benefits of plastics for electronics. We illustrate the viability of thermal imaging and imageable organics conductors by printing a functioning, large area (4000 cm2) active matrix backplane display circuit containing several thousand transistors. © 2003 American Institute of Physics.
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81.65.Cf Surface cleaning, etching, patterning
81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials

Phosphorescent top-emitting organic light-emitting devices with improved light outcoupling

H. Riel, S. Karg, T. Beierlein, B. Ruhstaller, and W. Rieß

Appl. Phys. Lett. 82, 466 (2003); http://dx.doi.org/10.1063/1.1537052 (3 pages) | Cited 97 times

Online Publication Date: 15 January 2003

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A dielectric capping layer has been used to increase the light output and to tune the spectral characteristics of top-emitting, phosphorescent organic light-emitting devices (OLEDs). By controlling the thickness of the dielectric layer deposited on top of a thin metal cathode, the transmittance of the top electrode can be adjusted. Maximum light output is not achieved at highest cathode transmittance, indicating that the interplay between different interference effects can be controlled by means of the capping-layer thickness. Furthermore, we demonstrate that the electrical device characteristic is not influenced by the capping layer. The strength of our concept in particular lies in the fact that the optical and the electrical device performance can be optimized separately. Using the capping-layer concept, we have achieved an OLED efficiency of 64 cd/A with pure green emission. © 2003 American Institute of Physics.
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85.60.Jb Light-emitting devices

Superconducting bolometer for far-infrared Fourier transform spectroscopy

J. T. Skidmore, J. Gildemeister, A. T. Lee, M. J. Myers, and P. L. Richards

Appl. Phys. Lett. 82, 469 (2003); http://dx.doi.org/10.1063/1.1538348 (3 pages) | Cited 4 times

Online Publication Date: 15 January 2003

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A voltage-biased superconducting bolometer with a heat sink temperature of 4.2 K has been developed for Fourier transform spectroscopy in the far infrared. This device is based on a Nb transition edge sensor with Tc = 8.1 K. It will operate for absorbed infrared power up to 3×10−6 W and has an absorber area of 7 mm2. The response is inherently linear and the noise equivalent power (NEP) = 1.2×10−13 W Hz−1/2 is dominated by thermal fluctuation noise. This NEP is at least a factor 10 better than that expected for a conventional 4.2 K semiconductor bolometer which is optimized for 1% saturation at the same infrared power. The optical response time τ = 1.2 ms is dominated by the internal thermalization time. A smaller version of this bolometer could be useful for diffraction-limited spectroscopy of small samples throughout the infrared. Estimates suggest that values of detectivity D∗>1011 cm Hz+1/2 W−1 and time constants approaching 270 μs could be achieved. © 2003 American Institute of Physics.
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85.25.Pb Superconducting infrared, submillimeter and millimeter wave detectors
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
07.57.Ty Infrared spectrometers, auxiliary equipment, and techniques

Electronic rectification in protein devices

R. Rinaldi, A. Biasco, G. Maruccio, V. Arima, P. Visconti, R. Cingolani, P. Facci, F. De Rienzo, R. Di Felice, E. Molinari, M. Ph. Verbeet, and G. W. Canters

Appl. Phys. Lett. 82, 472 (2003); http://dx.doi.org/10.1063/1.1530748 (3 pages) | Cited 29 times

Online Publication Date: 15 January 2003

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We show that the electron-transfer protein azurin can be used to fabricate biomolecular rectifiers exploiting its native redox properties, chemisorption capability and electrostatic features. The devices consist of a protein layer interconnecting nanoscale electrodes fabricated by electron beam lithography. They exhibit a rectification ratio as large as 500 at 10 V, and operate at room temperature and in air. © 2003 American Institute of Physics.
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85.65.+h Molecular electronic devices
87.14.E- Proteins
73.40.Ei Rectification
82.30.-b Specific chemical reactions; reaction mechanisms
85.40.Hp Lithography, masks and pattern transfer
68.43.-h Chemisorption/physisorption: adsorbates on surfaces
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