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20 Jan 2003

Volume 82, Issue 3, pp. 313-483

Issue Cover Spotlight Figure

Appl. Phys. Lett. 82, 370 (2003); http://dx.doi.org/10.1063/1.1537514 (3 pages)

Jan Schroers, Chris Veazey, and William L. Johnson
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Microscale to nanoscale ferroelectric domain and surface engineering of a near-stoichiometric LiNbO3 crystal

Kazuya Terabe, Masaru Nakamura, Shunji Takekawa, Kenji Kitamura, Shinji Higuchi, Yoshihiko Gotoh, and Yasuo Cho

Appl. Phys. Lett. 82, 433 (2003); http://dx.doi.org/10.1063/1.1538351 (3 pages) | Cited 61 times

Online Publication Date: 15 January 2003

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We have investigated microscale to nanoscale ferroelectric domain and surface engineering of a near-stoichiometric LiNbO3 crystal by using scanning force microscopy. The single crystals LiNbO3 fixed on metal substrates were polished to a 5 μm thickness. Artificial patterns of inverted-domain structures were fabricated in the samples, where polarization directions of the domains were switched by scanning the samples with a conductive cantilever while applying voltages. Furthermore, the negatively polarized surfaces in the patterns were preferentially etched in HF solution. As a result, cavity and mound-shaped surfaces were fabricated; these structures could be used to create functional templates and devices. © 2003 American Institute of Physics.
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77.80.Dj Domain structure; hysteresis
68.35.B- Structure of clean surfaces (and surface reconstruction)
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
68.37.Ps Atomic force microscopy (AFM)
81.65.Cf Surface cleaning, etching, patterning

Perimeter effect in very small ferroelectrics

Matthew Dawber, Dong Jin Jung, and James F. Scott

Appl. Phys. Lett. 82, 436 (2003); http://dx.doi.org/10.1063/1.1536022 (3 pages) | Cited 23 times

Online Publication Date: 15 January 2003

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We conducted impedance spectroscopy measurements on lead zirconate titanate capacitors of varying lateral size from 130×180 μm down to 1×1 μm. We discovered a peak in the impedance response with a frequency that depends on the perimeter of the capacitor with an exponential relationship. Our model for this effect is based on the idea that at low fields, nucleation occurs at stress free areas (in our case, the capacitor perimeter) and that domain-wall motion is restricted by viscous drag caused by the coupling of the domain wall to acoustic phonons. The relaxation time for the impedance peak is the time for the domain walls to propagate from the perimeter to the center. This process is somewhat different from the normal switching response; it occurs for small fields, when the capacitor has not been prepoled. The mechanism is similar to that for relaxation of an unstable polarization state. This model can also explain the logarithmic time dependence sometimes observed in those studies. © 2003 American Institute of Physics.
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85.50.Gk Non-volatile ferroelectric memories
84.32.Tt Capacitors
77.80.Dj Domain structure; hysteresis
77.22.Ej Polarization and depolarization

Optical waveguiding in magnetron-sputtered Na0.5K0.5NbO3 thin films on sapphire substrates

Mats Blomqvist, Sergey Khartsev, Alex Grishin, Adrian Petraru, and Christoph Buchal

Appl. Phys. Lett. 82, 439 (2003); http://dx.doi.org/10.1063/1.1539295 (3 pages) | Cited 19 times

Online Publication Date: 15 January 2003

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Preferentially oriented perovskite-structured Na0.5K0.5NbO3 (NKN) thin films have been deposited on hexagonal Al2O3(01math2) substrates using rf magnetron sputtering of a stoichiometric, high-density, ceramic target. Structural and film surface properties were measured using x-ray diffraction and atomic force microscopy, respectively. Optical and waveguiding properties were characterized using a prism-coupling technique. We observed sharp and distinguishable TM and TE propagation modes and measured the refractive index of NKN thin films of different thicknesses. The ordinary and extraordinary refractive indices were calculated to be no = 2.247±0.002 and ne = 2.216±0.002 for a 2.0-μm-thick film at 632.8 nm. This implies a birefringence Δn = ne−no = −0.031±0.002 in the film. These first results show the potential use of rf-sputtered NKN films as an electro-optical active material. © 2003 American Institute of Physics.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
68.55.-a Thin film structure and morphology
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
77.55.-g Dielectric thin films
77.80.-e Ferroelectricity and antiferroelectricity
68.35.B- Structure of clean surfaces (and surface reconstruction)
68.37.Ps Atomic force microscopy (AFM)
78.66.Nk Insulators
78.20.Fm Birefringence

Ferroelectric properties of Bi3.25La0.75Ti3O12 thin films grown on the highly oriented LaNiO3 buffered Pt/Ti/SiO2/Si substrates

Jiwei Zhai and Haydn Chen

Appl. Phys. Lett. 82, 442 (2003); http://dx.doi.org/10.1063/1.1539928 (3 pages) | Cited 22 times

Online Publication Date: 15 January 2003

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Bi3.25La0.75Ti3O12 (BLT) thin films were grown on Pt/Ti/SiO2/Si and on LaNiO3 (LNO) buffered Pt/Ti/SiO2/Si substrates using sol-gel processing. Scanning electron micrographs showed the BLT films are composed of peg-like or platelet-like grains depending upon annealing temperature and the substrate type. Large platelet grains were found in BLT films deposited on the LNO/Pt/Ti/SiO2/Si substrates; those thin films showed better polarization–voltage, capacitance–voltage, and current–voltage characteristics. More importantly, they did not show any significant fatigue up to 2×1010 switching cycles at a frequency of 1 MHz and electric field 85 kV/cm. © 2003 American Institute of Physics.
Show PACS
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
77.80.Fm Switching phenomena
77.80.Dj Domain structure; hysteresis
68.55.-a Thin film structure and morphology
68.37.Hk Scanning electron microscopy (SEM) (including EBIC)
61.72.Cc Kinetics of defect formation and annealing
81.40.Gh Other heat and thermomechanical treatments
77.22.Ej Polarization and depolarization
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