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20 Jan 2003

Volume 82, Issue 3, pp. 313-483

Issue Cover Spotlight Figure

Appl. Phys. Lett. 82, 370 (2003); http://dx.doi.org/10.1063/1.1537514 (3 pages)

Jan Schroers, Chris Veazey, and William L. Johnson
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Electroless metal discharge layers for electron beam lithography

Elizabeth A. Dobisz, Robert Bass, Susan L. Brandow, Mu-San Chen, and Walter J. Dressick

Appl. Phys. Lett. 82, 478 (2003); http://dx.doi.org/10.1063/1.1538350 (3 pages) | Cited 6 times

Online Publication Date: 15 January 2003

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We report a method for fabrication of continuous, conformal, ultrathin (i.e., 15–30 nm) Cu films using a room temperature, aqueous-based, electroless deposition technique on silica and polymer planarizer surfaces. The Cu films are sufficiently homogeneous, electrically conductive, and optically transparent for use as resist discharge layers during e-beam patterning of the substrate. The grounded Cu film, deployed here as a resist underlayer, eliminates the 0.1–0.4 μm subfield stitching errors normally observed in the absence of the Cu film during resist patterning on a glass or insulating substrate. The Cu is readily removed using a nitric acid wet etch following patterning. © 2003 American Institute of Physics.
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85.40.Hp Lithography, masks and pattern transfer
81.15.Pq Electrodeposition, electroplating

Fabrication of high-quality two-dimensional electron gases by overgrowth of focused-ion-beam-doped AlxGa1−xAs

D. Reuter, C. Riedesel, P. Schafmeister, C. Meier, and A. D. Wieck

Appl. Phys. Lett. 82, 481 (2003); http://dx.doi.org/10.1063/1.1539925 (3 pages) | Cited 4 times

Online Publication Date: 15 January 2003

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We have investigated two-dimensional electron gases (2DEGs) in inverted selectively doped GaAs/AlxGa1−xAs heterostructures fabricated by molecular-beam epitaxy (MBE) overgrowth of focused-ion-beam (FIB)-doped AlxGa1−xAs layers. In a first MBE step, the AlxGa1−xAs barrier was grown, before the sample was transferred to the FIB system. There, Si was implanted with 60 keV employing doses between 1×1012 and 1×1014 cm−2 and thereafter the sample was transferred back to the MBE system where the AlxGa1−xAs spacer as well as the GaAs top layer were grown. To protect the surface during the growth interruption, an amorphous As layer was used. Either an in situ annealing step before regrowth (30 s at 730 °C) or an ex situ thermal processing (30 s at 750 °C) after regrowth was used to remove the crystal damage due to the implantation. For the ex situ annealing step, we obtained mobilities up to 1.2×105 cm2/V s at 4.2 K after illumination whereas we observed mobilities up to 1.5×106 cm2/V s employing the in situ annealing step. © 2003 American Institute of Physics.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
81.05.Ea III-V semiconductors
68.55.A- Nucleation and growth
85.40.Ry Impurity doping, diffusion and ion implantation technology
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
61.72.uj III-V and II-VI semiconductors
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
61.80.Jh Ion radiation effects
61.82.Fk Semiconductors
61.72.Cc Kinetics of defect formation and annealing
72.20.Fr Low-field transport and mobility; piezoresistance
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