APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

20 Jan 2003

Volume 82, Issue 3, pp. 313-483

Issue Cover Spotlight Figure

Appl. Phys. Lett. 82, 370 (2003); http://dx.doi.org/10.1063/1.1537514 (3 pages)

Jan Schroers, Chris Veazey, and William L. Johnson
Enlarge Image | Read More
Return to All Sections
back to top
RSS Feeds

Ge island formation on stripe-patterned Si(001) substrates

Zhenyang Zhong, A. Halilovic, M. Mühlberger, F. Schäffler, and G. Bauer

Appl. Phys. Lett. 82, 445 (2003); http://dx.doi.org/10.1063/1.1536265 (3 pages) | Cited 29 times

Online Publication Date: 15 January 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Self-assembled Ge islands were grown by solid-source molecular-beam epitaxy on the submicron stripe-patterned Si(001) substrates at 650 °C. Atomic-force microscopy shows that the Ge islands grow preferentially at the sidewall of the Si stripes, oriented along the [−110] direction. The migration of the Ge adatoms from the top terrace down to the sidewall accounts for the island formation at the sidewall of the stripes. However, most of the Ge islands are formed on the top terraces when the patterned stripes are covered by a strained GeSi multilayer buffer prior to Ge island growth. Apparently, the strained buffer layer acts as a stressor and contributes to the preferential growth of islands on the top terrace. © 2003 American Institute of Physics.
Show PACS
68.43.Hn Structure of assemblies of adsorbates (two- and three-dimensional clustering)
68.35.B- Structure of clean surfaces (and surface reconstruction)
68.43.Jk Diffusion of adsorbates, kinetics of coarsening and aggregation
81.07.Ta Quantum dots
68.37.Ps Atomic force microscopy (AFM)

Control of growth orientation for carbon nanotubes

Ki-Hong Lee, Jeong-Min Cho, and Wolfgang Sigmund

Appl. Phys. Lett. 82, 448 (2003); http://dx.doi.org/10.1063/1.1535269 (3 pages) | Cited 26 times

Online Publication Date: 15 January 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Laterally aligned carbon nanotubes were synthesized on substrates over iron nanoparticles using chemical vapor deposition. In addition, aligned carbon nanotubes grown vertically and with tilt angle to the substrates were produced, which means that it is possible to grow aligned carbon nanotubes at any angle relative to the substrate. The growth direction of the carbon nanotubes was controlled by a magnetic field that is applied in the process of adhering catalyst particles on silicon oxide substrates from dispersion. The ferromagnetic property of the iron nanoparticles fixes them in a defined orientation under magnetic field, which results in aligned growth of the carbon nanotubes. These results indicate that carbon nanotubes preferentially grow from certain facets of the catalyst particles, suggesting a crucial clue in investigating the growth mechanism of carbon nanotubes. The laterally aligned carbon nanotubes could make it possible to integrate them in nanoelectronic devices, such as a channel for field-effect transistors. © 2003 American Institute of Physics.
Show PACS
81.07.De Nanotubes
61.46.-w Structure of nanoscale materials
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.-a Thin film structure and morphology

Enhanced dynamic annealing in Ga+ ion-implanted GaN nanowires

S. Dhara, A. Datta, C. T. Wu, Z. H. Lan, K. H. Chen, Y. L. Wang, L. C. Chen, C. W. Hsu, H. M. Lin, and C. C. Chen

Appl. Phys. Lett. 82, 451 (2003); http://dx.doi.org/10.1063/1.1536250 (3 pages) | Cited 26 times

Online Publication Date: 15 January 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Ga+ ion implantation of chemical-vapor-deposited GaN nanowires (NWs) is studied using a 50-keV Ga+ focused ion beam. The role of dynamic annealing (defect-annihilation) is discussed with an emphasis on the fluence-dependent defect structure. Unlike heavy-ion-irradiated epitaxial GaN film, large-scale amorphization is suppressed until a very high fluence of 2×1016 ions cm−2. In contrast to extended-defects as reported for heavy-ion-irradiated epitaxial GaN film, point-defect clusters are identified as major component in irradiated NWs. Enhanced dynamic annealing induced by high diffusivity of mobile point-defects in the confined geometry of NWs is identified as the probable reason for observed differences. © 2003 American Institute of Physics.
Show PACS
61.72.Cc Kinetics of defect formation and annealing
81.07.Vb Quantum wires
81.05.Ea III-V semiconductors
85.40.Ry Impurity doping, diffusion and ion implantation technology
68.65.La Quantum wires (patterned in quantum wells)
61.72.uj III-V and II-VI semiconductors
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
61.72.J- Point defects and defect clusters

Ge hut cluster luminescence below bulk Ge band gap

U. Denker, M. Stoffel, O. G. Schmidt, and H. Sigg

Appl. Phys. Lett. 82, 454 (2003); http://dx.doi.org/10.1063/1.1537437 (3 pages) | Cited 31 times

Online Publication Date: 15 January 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We report on the photoluminescence (PL) properties of Ge hut cluster islands on Si(001) that were overgrown at temperatures as low as 250 °C. We find that the island-related photoluminescence systematically redshifts as the overgrowth temperature is reduced from 500 to 360 °C, which is attributed to a reduced Ge segregation. For even lower overgrowth temperatures, the emission energy saturates at 0.63 eV or 1.96 μm, more than 110 meV smaller than the band gap of unstrained bulk Ge. We report a PL peak centered at 2.01 μm at low excitation power, in good agreement with the estimated transition energy for a spatially indirect transition between holes confined in the strained Ge island and electrons confined in the surrounding Si matrix. PL is observed up to a temperature of 185 K and an activation energy of 40 meV is deduced from fitting the temperature-dependent peak intensity. Annealing experiments reveal a systematic blueshift of the hut cluster-related PL, thus verifying unambiguously, that the PL signal originates from the hut clusters and not from defects. © 2003 American Institute of Physics.
Show PACS
78.55.Ap Elemental semiconductors
78.66.Db Elemental semiconductors and insulators
68.55.-a Thin film structure and morphology
71.20.Mq Elemental semiconductors

Direct molding of nanopatterned polymeric films: Resolution and errors

O. Azzaroni, P. L. Schilardi, R. C. Salvarezza, R. Gago, and L. Vázquez

Appl. Phys. Lett. 82, 457 (2003); http://dx.doi.org/10.1063/1.1537867 (3 pages) | Cited 5 times

Online Publication Date: 15 January 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The capability of the direct polymer molding method to transfer ordered nanopatterns from a surface-modified silicon template to polymeric materials, such as polystyrene (PS) and high-impact polystyrene (HIPS) is investigated by tapping mode atomic force microscopy (AFM). The lateral resolution of the method for both materials is 54±1 nm while the vertical resolution is 5±1 nm and 3±1 nm, for PS and HIPS, respectively. This difference is explained by considering the different nanomechanical properties of the polymers. In contrast, HIPS surfaces are more resistant to the wear induced by the repetitive “reading” of the surface structure with the AFM tip. © 2003 American Institute of Physics.
Show PACS
81.16.Rf Micro- and nanoscale pattern formation
68.37.Ps Atomic force microscopy (AFM)
81.10.Fq Growth from melts; zone melting and refining
68.35.B- Structure of clean surfaces (and surface reconstruction)
61.41.+e Polymers, elastomers, and plastics

Growth of large periodic arrays of carbon nanotubes

Z. P. Huang, D. L. Carnahan, J. Rybczynski, M. Giersig, M. Sennett, D. Z. Wang, J. G. Wen, K. Kempa, and Z. F. Ren

Appl. Phys. Lett. 82, 460 (2003); http://dx.doi.org/10.1063/1.1539299 (3 pages) | Cited 61 times

Online Publication Date: 15 January 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Large periodic arrays of carbon nanotubes have been grown by plasma-enhanced hot filament chemical vapor deposition on periodic arrays of nickel dots that were prepared by polystyrene nanosphere lithography. A single layer of self-assembled polystyrene spheres was first uniformly deposited on a silicon wafer as a mask, and then electron beam vaporization was used to deposit a nickel layer through the mask. The size of and spacing between the nickel dots are tunable by varying the diameter of the polystyrene spheres, which consequently determines the diameter and site density of carbon nanotubes. The technique can be scaled up at much lower cost than electron beam lithography. © 2003 American Institute of Physics.
Show PACS
81.07.De Nanotubes
81.16.Nd Micro- and nanolithography
61.46.-w Structure of nanoscale materials
Return to All Sections
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close