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Applied Physics Letters / Volume 82 / Issue 4 / STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

Appl. Phys. Lett. 82, 562 (2003); http://dx.doi.org/10.1063/1.1536253 (3 pages)

Structural reconstruction of hexagonal to cubic ZnO films on Pt/Ti/SiO2/Si substrate by annealing

Sung-Kyu Kim1,2, Se-Young Jeong1,2, and Chae-Ryong Cho3

1Department of Physics, Pusan National University, Busan, 609-735, Korea
2COMTECS Ltd, Advanced Material Research Laboratory, Daegu, 704-702 Korea
3Korea Basic Science Institute, Busan branch, Busan 609-735, Korea

(Received 30 September 2002; accepted 19 November 2002)

It is well known that ZnO generally has the wurtzite structure. We report the growth of both hexagonal and cubic ZnO on Pt(111)/Ti/SiO2/Si substrate by a solution deposition. The wurtzite structure of ZnO film is enhanced up to the annealing temperature of 600 °C, and disappeared for annealing temperatures above 700 °C. The Pt(111)/Ti/SiO2/Si substrate is reoriented to hexagonal-Pt3Ti(004)/Ti/SiO2/Si when annealed at 700 °C and above due to the Ti out-diffusion and the ZnO thin film grown on the substrate has a cubic structure. The diffusion of Ti was evidenced by Auger electron spectroscopy measurements. From the photoluminescence measurement, the band gap of the wurtzite structure of ZnO film grown by the annealing below 600 °C was 3.37 eV, as is already known, but the cubic ZnO had a band gap of 3.28 eV, which suggests a zinc blende structure. The stability of the zinc blende structure on Zn2TiO4 layer was checked by the calculation of the lattice mismatch using the extended atomic distance mismatch model. Additionally the formation of the zinc blende ZnO could be prevented by using the Pt(111)/TiO2/SiO2/Si substrate. © 2003 American Institute of Physics.

© 2003 American Institute of Physics

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KEYWORDS and PACS

Keywords

zinc compounds, II-VI semiconductors, semiconductor thin films, liquid phase deposited coatings, semiconductor growth, crystal symmetry, solid-state phase transformations, annealing, photoluminescence, Auger electron spectra, thermal stability, energy gap

PACS

  • 68.55.-a

    Thin film structure and morphology

  • 81.05.Dz

    II-VI semiconductors

  • 81.15.Lm

    Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)

  • 64.70.K-

    Solid-solid transitions

  • 78.55.Et

    II-VI semiconductors

  • 78.66.Hf

    II-VI semiconductors

  • 61.72.Cc

    Kinetics of defect formation and annealing

  • 79.20.Fv

    Electron impact: Auger emission

  • 68.60.Dv

    Thermal stability; thermal effects

  • 71.20.Nr

    Semiconductor compounds

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.1536253

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
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