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27 Jan 2003

Volume 82, Issue 4, pp. 487-659

Issue Cover Spotlight Figure

Appl. Phys. Lett. 82, 559 (2003); http://dx.doi.org/10.1063/1.1539543 (3 pages)

P. R. C. Kent and Alex Zunger
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Investigation of buffer traps in an AlGaN/GaN/Si high electron mobility transistor by backgating current deep level transient spectroscopy

M. Marso, M. Wolter, P. Javorka, P. Kordoš, and H. Lüth

Appl. Phys. Lett. 82, 633 (2003); http://dx.doi.org/10.1063/1.1540239 (3 pages) | Cited 8 times

Online Publication Date: 22 January 2003

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The influence of a substrate voltage on the dc characteristics of an AlGaN/GaN high electron mobility transistor (HEMT) on silicon (111) substrate is profited to investigate traps that are located between the substrate and the two-dimensional electron gas channel. The transient of the drain current after applying a negative substrate voltage is evaluated in the temperature range from 30 to 100 °C. With this method, known as backgating current deep level transient spectroscopy, majority carrier traps with activation energy of 200 meV as well as minority carrier traps at 370 meV are identified. The experiments are performed on completed HEMTs, allowing the investigation of the influence of device fabrication technology. © 2003 American Institute of Physics.
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85.30.Tv Field effect devices
85.30.De Semiconductor-device characterization, design, and modeling
71.55.Eq III-V semiconductors
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths

High-performance planar light-emitting diodes

Marco Cecchini, Vincenzo Piazza, Fabio Beltram, Marco Lazzarino, M. B. Ward, A. J. Shields, H. E. Beere, and D. A. Ritchie

Appl. Phys. Lett. 82, 636 (2003); http://dx.doi.org/10.1063/1.1540244 (3 pages) | Cited 12 times

Online Publication Date: 22 January 2003

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High-speed planar light-emitting diodes fabricated within a single high-mobility quantum well are demonstrated. Devices were fabricated by photolithography and wet chemical etching starting from p-type modulation-doped Al0.5Ga0.5As/GaAs heterostructures grown by molecular beam epitaxy. Electrical and optical measurements from room temperature down to 1.8 K show high spectral purity, high external efficiency, and extremely short recombination times of the order of 50 ps. Time-resolved electroluminescence measurements demonstrate subnanosecond modulation time scale. © 2003 American Institute of Physics.
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85.60.Jb Light-emitting devices
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
78.67.De Quantum wells
78.60.Fi Electroluminescence
81.07.St Quantum wells
78.47.-p Spectroscopy of solid state dynamics
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
78.55.Cr III-V semiconductors

Fabrication of p-pentacene/n-Si organic photodiodes and characterization of their photoelectric properties

S. S. Kim, Y. S. Choi, Kibum Kim, J. H. Kim, and Seongil Im

Appl. Phys. Lett. 82, 639 (2003); http://dx.doi.org/10.1063/1.1540243 (3 pages) | Cited 31 times

Online Publication Date: 22 January 2003

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We have fabricated p-pentacene/n-Si organic photodiodes by thermal evaporation of pentacene films at 25 (RT), 60, and 80 °C. Our pentacene films exhibit the main absorption peak (highest occupied molecular orbital-lowest unoccupied molecular orbital gap transition) at 1.82 eV and photoelectric effects were clearly observed from our p-pentacene/n-Si diodes when illuminated by a monochromatic red light of 1.85 eV (670 nm). Excellent photoresponsivity of 2.6 A/W and the photoresponse time of less than 40 ns have been demonstrated. The photodiodes exhibited typical rectifying behavior in the dark and the leakage current increases with the deposition temperature. © 2003 American Institute of Physics.
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85.60.Dw Photodiodes; phototransistors; photoresistors
85.65.+h Molecular electronic devices
73.50.Pz Photoconduction and photovoltaic effects
73.61.Ph Polymers; organic compounds
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
73.40.Ei Rectification

Enhanced electroluminescence from light-emitting devices based on poly(9,9-dihexadecylfluorene-2,7-diyl) and polysilane blends

Věra Cimrová and Drahomír Výprachtický

Appl. Phys. Lett. 82, 642 (2003); http://dx.doi.org/10.1063/1.1538352 (3 pages) | Cited 14 times

Online Publication Date: 22 January 2003

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Photoluminescence and electroluminescence (EL) of poly(9,9-dihexadecylfluorene-2,7-diyl) (PFC16) and its blends with hole-transporting poly[methyl(phenyl)silanediyl] modified with pyrene were studied. Efficient blue light-emitting devices were fabricated. Blending of PFC16 with modified polysilane led to a significant improvement in the EL efficiency and stability compared with the devices fabricated from neat PFC16. An increase in the EL efficiency of up to two orders of magnitude was achieved. The increase in the EL efficiency was attributed to the modification of the charge transport and recombination in the blend. © 2003 American Institute of Physics.
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85.60.Jb Light-emitting devices
78.60.Fi Electroluminescence
78.55.Kz Solid organic materials

Fabrication approach for molecular memory arrays

Chao Li, Daihua Zhang, Xiaolei Liu, Song Han, Tao Tang, Chongwu Zhou, Wendy Fan, Jessica Koehne, Jie Han, Meyya Meyyappan, A. M. Rawlett, D. W. Price, and J. M. Tour

Appl. Phys. Lett. 82, 645 (2003); http://dx.doi.org/10.1063/1.1541943 (3 pages) | Cited 61 times

Online Publication Date: 22 January 2003

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We present an approach to tackle long-standing problems in contacts, thermal damage, pinhole induced short circuits and interconnects in molecular electronic device fabrication and integration. Our approach uses metallic nanowires as top electrodes to connect and interconnect molecular wires assembled on electrode arrays in crossbar architectures. Using this simple and reliable approach, we have revealed intriguing memory effects for several different molecular wires, and demonstrated their applications in molecular memory arrays. Our approach has great potential to be used for fast screening of molecular wire candidates and construction of molecular devices. © 2003 American Institute of Physics.
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85.65.+h Molecular electronic devices
81.07.Nb Molecular nanostructures
85.35.-p Nanoelectronic devices
81.16.-c Methods of micro- and nanofabrication and processing
84.30.Sk Pulse and digital circuits
85.40.Ls Metallization, contacts, interconnects; device isolation
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