APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

27 Jan 2003

Volume 82, Issue 4, pp. 487-659

Issue Cover Spotlight Figure

Appl. Phys. Lett. 82, 559 (2003); http://dx.doi.org/10.1063/1.1539543 (3 pages)

P. R. C. Kent and Alex Zunger
Enlarge Image | Read More
Return to All Sections
back to top
RSS Feeds

Single-crystal barium titanate thin films by ion slicing

T. Izuhara, I.-L. Gheorma, R. M. Osgood, A. N. Roy, H. Bakhru, Yiheli M. Tesfu, and M. E. Reeves

Appl. Phys. Lett. 82, 616 (2003); http://dx.doi.org/10.1063/1.1540727 (3 pages) | Cited 11 times

Online Publication Date: 22 January 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Thin barium titanate films, 0.5–8 μm thick, are obtained from a single-crystal bulk sample using ion slicing. The process, based on ion implantation and anodic bonding, separates thin films having areas of ∼ 1×1 cm2, from bulk crystals. The quality of the film is characterized by measurement of surface roughness and dielectric properties. The film permittivity retains its single-crystal value. © 2003 American Institute of Physics.
Show PACS
77.55.-g Dielectric thin films
61.80.Jh Ion radiation effects
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.22.Gm Dielectric loss and relaxation
77.80.Dj Domain structure; hysteresis
61.82.Ms Insulators
61.72.up Other materials
68.35.B- Structure of clean surfaces (and surface reconstruction)
77.22.Ch Permittivity (dielectric function)
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)

Cylindroid rigid-wall simulation of the influence of gas pressure in pulsed laser deposition of LiNbO3 films

X. Yang, X. L. Wu, Z. Y. Zhang, G. G. Siu, Z. G. Dong, L. Fang, and M. R. Shen

Appl. Phys. Lett. 82, 619 (2003); http://dx.doi.org/10.1063/1.1540217 (3 pages)

Online Publication Date: 22 January 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We have demonstrated that gas pressure (pG) is a key parameter for fabricating stoichiometric LiNbO3 thin films during laser ablation. To theoretically describe the influence of pG, a cylindroid rigid-wall model was presented. It was shown that there exist two critical pressures related to Li and Nb: pLi and pNb(pLi<pNb). They separate pG into three intervals. When pG<pLi, pG has little influence on film stoichiometry and the obtained films contain fixed Li deficiency. When pLi ⩽ pG ⩽ pNb, pG plays an important role in forming stoichiometric films. When pG ≥ pNb, the change of pG does not affect film stoichiometry, but the film growth because of greatly reduced energies of the species that reach the substrate. The presented theory was in good agreement with experiments. This model provides a useful way for growing multicomponent films by pulsed laser deposition. © 2003 American Institute of Physics.
Show PACS
81.15.Fg Pulsed laser ablation deposition
68.55.A- Nucleation and growth
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
81.15.Aa Theory and models of film growth
77.55.-g Dielectric thin films
61.66.Bi Elemental solids
61.66.Dk Alloys
Return to All Sections
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close