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27 Jan 2003

Volume 82, Issue 4, pp. 487-659

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Appl. Phys. Lett. 82, 559 (2003); http://dx.doi.org/10.1063/1.1539543 (3 pages)

P. R. C. Kent and Alex Zunger
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Photoconductivity and spin-dependent photoconductivity of hydrosilylated (111) silicon surfaces

A. Lehner, F. Kohl, S. A. Franzke, T. Graf, M. S. Brandt, and M. Stutzmann

Appl. Phys. Lett. 82, 565 (2003); http://dx.doi.org/10.1063/1.1540732 (3 pages) | Cited 10 times

Online Publication Date: 22 January 2003

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Organic monolayers were prepared on hydrogen-terminated (111) silicon surfaces by thermally induced hydrosilylation with alkenes. The electronic properties of the modified surfaces were studied by photoconductivity and spin-dependent photoconductivity measurements (electrically detected magnetic resonance) and compared to the oxidized and hydrogen-terminated silicon surfaces. The photoconductivity at low intensity of illumination (monomolecular recombination regime) indicates that the hydrosilylated surface has nearly as few defects as the surfaces treated in HF vapor. The paramagnetic defects detected in the spin-dependent photoconductivity are identified as the silicon dangling bond Pb-center. The density of defects at the hydrosilylated (111) silicon surface is determined by electron spin resonance measurements to be about 1013 cm−2. © 2003 American Institute of Physics.
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72.40.+w Photoconduction and photovoltaic effects
73.20.Hb Impurity and defect levels; energy states of adsorbed species
76.30.Mi Color centers and other defects
81.05.Cy Elemental semiconductors
81.65.Rv Passivation
71.55.Cn Elemental semiconductors

Mechanisms responsible for improvement of 4H–SiC/SiO2 interface properties by nitridation

V. V. Afanas’ev, A. Stesmans, F. Ciobanu, G. Pensl, K. Y. Cheong, and S. Dimitrijev

Appl. Phys. Lett. 82, 568 (2003); http://dx.doi.org/10.1063/1.1532103 (3 pages) | Cited 53 times

Online Publication Date: 22 January 2003

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An analysis of fast and slow traps at the interface of 4H–SiC with oxides grown in O2, N2O, and NO reveals that the dominant positive effect of nitridation is due to a significant reduction of the slow electron trap density. These traps are likely to be related to defects located in the near-interfacial oxide layer. In addition, the analysis confirms that the fast interface states related to clustered carbon are also reduced by nitridation. © 2003 American Institute of Physics.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
73.20.Hb Impurity and defect levels; energy states of adsorbed species
68.35.Dv Composition, segregation; defects and impurities
81.65.Rv Passivation

CdS and Cd(OH)2 formation during Cd treatments of Cu(In,Ga)(S,Se)2 thin-film solar cell absorbers

L. Weinhardt, Th. Gleim, O. Fuchs, C. Heske, E. Umbach, M. Bär, H.-J. Muffler, Ch.-H. Fischer, M. C. Lux-Steiner, Y. Zubavichus, T. P. Niesen, and F. Karg

Appl. Phys. Lett. 82, 571 (2003); http://dx.doi.org/10.1063/1.1539553 (3 pages) | Cited 32 times

Online Publication Date: 22 January 2003

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The surface modifications induced by treating Cu(In,Ga)(S,Se)2 films in an aqueous ammonia hydroxide-based solution of Cd2+ ions—as used in record Cu(In,Ga)(S,Se)2 solar cells without a CdS buffer layer—have been investigated for different Cd2+ concentrations. Employing a combination of x-ray photoelectron spectroscopy, Auger electron spectroscopy, and x-ray emission spectroscopy, it is possible to distinguish two different surface modifications. For Cd2+ concentrations below 4.5 mM in the solution we observe the formation of a CdS monolayer, while higher Cd2+ concentrations lead to the additional deposition of a cadmium hydroxide film on the CdS/Cu(In,Ga)(S,Se)2 surface. © 2003 American Institute of Physics.
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81.65.-b Surface treatments
81.05.Hd Other semiconductors
42.79.Ek Solar collectors and concentrators
84.60.Jt Photoelectric conversion
79.60.Dp Adsorbed layers and thin films
82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)
78.70.En X-ray emission spectra and fluorescence

Electronic and transport properties of reduced and oxidized nanocrystalline TiO2 films

A. Rothschild, Y. Komem, A. Levakov, N. Ashkenasy, and Yoram Shapira

Appl. Phys. Lett. 82, 574 (2003); http://dx.doi.org/10.1063/1.1539556 (3 pages) | Cited 29 times

Online Publication Date: 22 January 2003

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Electronic properties of reduced (vacuum-annealed) and oxidized (air-annealed) TiO2 films were investigated by in situ conductivity and current–voltage measurements as a function of the ambient oxygen pressure and temperature, and by ex situ surface photovoltage spectroscopy. The films were quite conductive in the reduced state but their resistance drastically increased upon exposure to air at 350 °C. In addition, the surface potential barrier was found to be much larger for the oxidized versus the reduced films. This behavior may be attributed to the formation of surface and grain boundary barriers due to electron trapping at interface states associated with chemisorbed oxygen species. © 2003 American Institute of Physics.
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73.61.Le Other inorganic semiconductors
73.63.Bd Nanocrystalline materials
73.50.Pz Photoconduction and photovoltaic effects
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
81.15.Cd Deposition by sputtering
81.07.Bc Nanocrystalline materials
61.72.Cc Kinetics of defect formation and annealing
73.25.+i Surface conductivity and carrier phenomena
73.20.Hb Impurity and defect levels; energy states of adsorbed species

Correlated charge detection for readout of a solid-state quantum computer

T. M. Buehler, D. J. Reilly, R. Brenner, A. R. Hamilton, A. S. Dzurak, and R. G. Clark

Appl. Phys. Lett. 82, 577 (2003); http://dx.doi.org/10.1063/1.1539904 (3 pages) | Cited 24 times

Online Publication Date: 22 January 2003

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The single-electron transistor (SET) is a prime candidate for reading out the final state of a qubit in a solid-state quantum computer. Such a measurement requires the detection of subelectron charge motion in the presence of random charging events. We present a detection scheme where the signals from two SETs are cross-correlated to suppress unwanted artifacts due to charge noise. This technique is demonstrated by using the two SETs to detect the charge state of two coupled metal dots, thereby simulating charge transfer and readout in a two-qubit system. These measurements indicate that for comparable buried dopant semiconductor architectures, the minimum measurement time required to distinguish between the two charge states is of the order of 10 ns. © 2003 American Institute of Physics.
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03.67.Lx Quantum computation architectures and implementations
85.35.Gv Single electron devices
73.21.La Quantum dots

Electrical properties of metal contacts on laser-irradiated n-type GaN

Ho Won Jang, Jong Kyu Kim, Jong-Lam Lee, J. Schroeder, and T. Sands

Appl. Phys. Lett. 82, 580 (2003); http://dx.doi.org/10.1063/1.1537515 (3 pages) | Cited 12 times

Online Publication Date: 22 January 2003

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The electrical properties of metal contacts on laser-irradiated n-type GaN were investigated using synchrotron radiation photoemission spectroscopy. A KrF excimer laser pulse of 600 mJ/cm2 onto GaN led to a decrease in the Ni Schottky barrier height from 0.91 to 0.47 eV, resulting in the formation of a nonalloyed Ohmic contact with a specific contact resistivity of 1.7×10−6 Ω cm2. Metallic Ga decomposed from GaN by laser irradiation was transformed into GaOx, playing a role in promoting outdiffusion of N atoms. A large number of N vacancies were produced, forming a degenerated GaN layer near the surface, resulting in the good Ohmic contact. © 2003 American Institute of Physics.
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73.40.Ns Metal-nonmetal contacts
61.82.Fk Semiconductors
79.60.Jv Interfaces; heterostructures; nanostructures
73.40.Cg Contact resistance, contact potential
79.20.Ds Laser-beam impact phenomena
68.35.Fx Diffusion; interface formation
61.72.J- Point defects and defect clusters
68.37.Ps Atomic force microscopy (AFM)

Effect of microstructural change on magnetic property of Mn-implanted p-type GaN

Jeong Min Baik, Ho Won Jang, Jong Kyu Kim, and Jong-Lam Lee

Appl. Phys. Lett. 82, 583 (2003); http://dx.doi.org/10.1063/1.1541111 (3 pages) | Cited 35 times

Online Publication Date: 22 January 2003

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A dilute magnetic semiconductor was achieved by implanting Mn ions into p-type GaN and subsequent annealing. The ferromagnetic property was obtained after annealing at 800 °C. This was attributed to the formation of Ga–Mn magnetic phases. Higher temperature annealing at 900 °C reduced the ferromagnetic signal and produced antiferromagnetic Mn–N compounds such as Mn6N2.58 and Mn3N2, leaving N vacancies. This provides evidence that N vacancies play a critical role in weakening the ferromagnetic property in the Mn-implanted GaN. © 2003 American Institute of Physics.
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81.40.Rs Electrical and magnetic properties related to treatment conditions
75.30.Kz Magnetic phase boundaries (including classical and quantum magnetic transitions, metamagnetism, etc.)
75.50.Pp Magnetic semiconductors
81.40.Gh Other heat and thermomechanical treatments
75.50.Dd Nonmetallic ferromagnetic materials
75.50.Ee Antiferromagnetics
61.72.J- Point defects and defect clusters

Neutron radiation effects on the nonlinear current–voltage characteristics of ilmenite-hematite ceramics

P. Padmini, M. Pulikkathara, R. Wilkins, and R. K. Pandey

Appl. Phys. Lett. 82, 586 (2003); http://dx.doi.org/10.1063/1.1537030 (3 pages) | Cited 4 times

Online Publication Date: 22 January 2003

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Ilmenite-hematite (IH) is a wide-band gap semiconducting material with a potential for low-voltage varistor applications. The nonlinear characteristics of this material were investigated before and after exposure to high-energy neutron radiation. The typical current–voltage characteristics of a varistor device are retained in all our samples subjected to neutron radiation. However, the effect is more pronounced on the device parameters like the nonlinear coefficient (α) and switching field (Es). The crystallinity of the ceramic remains unaffected after irradiation. Our observations confirm that IH-based varistor devices can perform satisfactorily even in radiation dominant environments such as in space and nuclear reactors. © 2003 American Institute of Physics.
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72.20.Ht High-field and nonlinear effects
72.80.Jc Other crystalline inorganic semiconductors
61.80.Hg Neutron radiation effects
61.82.Fk Semiconductors

Strain-induced growth of SiO2 dots by liquid phase deposition

C. W. Liu, B.-C. Hsu, K.-F. Chen, M. H. Lee, C.-R. Shie, and Pang-Shiu Chen

Appl. Phys. Lett. 82, 589 (2003); http://dx.doi.org/10.1063/1.1542682 (3 pages) | Cited 1 time

Online Publication Date: 22 January 2003

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Silicon dioxide dots are deposited on the Si cap layers of self-assembled Ge dots using a liquid phase deposition method. The Si capping layer directly above the Ge dots has a tensile strain, while the Si cap on the wetting layer is not strained. The tensile strain can enhance the silicon dioxide nucleation and deposition on Si surface, and SiO2 dots are directly formed on the top of Ge dots with the SiO2 wetting layers between the dots. The step height and base width of the dots increase with the deposition time. A metal-oxide-semiconductor photodetector is fabricated using the liquid-phase-deposited oxide, and has a responsivity of 0.08 mA/W at 1550 nm. © 2003 American Institute of Physics.
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81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
68.55.A- Nucleation and growth
68.65.Hb Quantum dots (patterned in quantum wells)

Shallow donor state of hydrogen in indium nitride

E. A. Davis, S. F. J. Cox, R. L. Lichti, and C. G. Van de Walle

Appl. Phys. Lett. 82, 592 (2003); http://dx.doi.org/10.1063/1.1539547 (3 pages) | Cited 45 times

Online Publication Date: 22 January 2003

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The nature of the electron states associated with hydrogen in InN has been inferred by studying the behavior of positive muons, which mimic protons when implanted into semiconductors. The muons capture electrons below 60 K, forming paramagnetic centers with a binding energy of about 12 meV. Together with an exceedingly small muon-electron hyperfine constant indicative of a highly delocalized electron wave function, the results confirm the recently predicted shallow-donor properties of hydrogen in InN. © 2003 American Institute of Physics.
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71.55.Eq III-V semiconductors
81.05.Ea III-V semiconductors
76.75.+i Muon spin rotation and relaxation
71.70.Jp Nuclear states and interactions

Structural and electrical properties of an electron-beam-irradiated C60 film

Jun Onoe, Tomonobu Nakayama, Masakazu Aono, and Toshiki Hara

Appl. Phys. Lett. 82, 595 (2003); http://dx.doi.org/10.1063/1.1542943 (3 pages) | Cited 61 times

Online Publication Date: 22 January 2003

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The structural and electrical properties of an electron-beam (EB)-irradiated C60 film have been examined at room temperature, using in situ infrared (IR) spectroscopy and ex situ four-probe measurements. IR results show that the irradiated film is neither graphite nor carbon nanotube-like but a peanut-shaped C60 polymer. Current–voltage curve shows that the polymer exhibits a metallic property with a drastically reduced resistivity of 7 Ω cm in comparison with 108–1014 Ω cm for solid C60. This indicates the possibility of applying C60 molecules in EB nanofabrication processes and large potential for developing carbon-based nanodevices. © 2003 American Institute of Physics.
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61.48.-c Structure of fullerenes and related hollow and planar molecular structures
73.61.Wp Fullerenes and related materials
78.30.Na Fullerenes and related materials
78.66.Tr Fullerenes and related materials
72.80.Rj Fullerenes and related materials
81.05.ub Fullerenes and related materials
68.55.-a Thin film structure and morphology
61.80.Fe Electron and positron radiation effects

Determination of the in-plane anisotropy of the electron effective mass tensor in 6H–SiC

H. P. Iwata

Appl. Phys. Lett. 82, 598 (2003); http://dx.doi.org/10.1063/1.1539545 (3 pages) | Cited 5 times

Online Publication Date: 22 January 2003

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An experimental evidence for the strong in-plane anisotropy of the electron effective mass tensor in 6H–SiC is reported. Furthermore, two components of the mass tensor in 6H–SiC, mM−Γ∗ and mM−K∗, have been resolved by making a theoretical bridge between Hall effect measurements and cyclotron resonance experiments, based on the Boltzmann transport equation. The method to resolve the in-plane effective mass components is also applied for 4H–SiC, which have already been resolved by cyclotron resonance. The values determined by our method are fully consistent with available experiments and calculations. © 2003 American Institute of Physics.
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71.18.+y Fermi surface: calculations and measurements; effective mass, g factor
81.05.Hd Other semiconductors
71.20.Nr Semiconductor compounds
72.20.My Galvanomagnetic and other magnetotransport effects
76.40.+b Diamagnetic and cyclotron resonances
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