APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

27 Jan 2003

Volume 82, Issue 4, pp. 487-659

Issue Cover Spotlight Figure

Appl. Phys. Lett. 82, 559 (2003); http://dx.doi.org/10.1063/1.1539543 (3 pages)

P. R. C. Kent and Alex Zunger
Enlarge Image | Read More
Return to All Sections
back to top
RSS Feeds

Local probing of thermal properties at submicron depths with megahertz photothermal vibrations

M. Tomoda, N. Shiraishi, O. V. Kolosov, and O. B. Wright

Appl. Phys. Lett. 82, 622 (2003); http://dx.doi.org/10.1063/1.1539906 (3 pages) | Cited 2 times

Online Publication Date: 22 January 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We demonstrate the imaging of buried features in a microstructure—a tiny hole in an aluminum thin film covered by a chromium layer—with nanometer lateral resolution using a transient temperature distribution restricted to within ∼0.5 μm of the sample surface. This is achieved by mapping photothermally induced megahertz surface vibrations in an atomic force microscope. Local thermal probing with megahertz-frequency thermal waves is thus shown to be a viable method for imaging subsurface thermal features at submicron depths. © 2003 American Institute of Physics.
Show PACS
07.20.-n Thermal instruments and apparatus
78.20.N- Thermo-optic effects
78.20.nb Photothermal effects
68.35.Ja Surface and interface dynamics and vibrations
07.79.Lh Atomic force microscopes
68.37.Ps Atomic force microscopy (AFM)

Bias effect on the luminescent properties of rectangular and trapezoidal quantum-well structures

M. G. Cheong, R. J. Choi, E.-K. Suh, and H. J. Lee

Appl. Phys. Lett. 82, 625 (2003); http://dx.doi.org/10.1063/1.1536263 (2 pages) | Cited 3 times

Online Publication Date: 22 January 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We have investigated the properties of two types of InGaN/GaN quantum-well (QW) structures. Photoluminescence (PL) measurements were carried out by varying the external bias voltage. The magnitude of the variation in PL peak position and intensity of trapezoid QWs (TQWs) is much smaller than that of rectangular QWs (RQWs). According to transmission electron microscopy measurements, quantum dots are more densely and uniformly distributed in TQWs than in RQWs. The electroluminescence image of a light-emitting diode fabricated using TQWs as active layers (TQW-LED) is more uniform than that of a light-emitting diode fabricated using RQWs as active layers (RQW-LED). Optical output power of a TQW-LED is larger than that of a RQW-LED. These results show that the origin of strong emission from InGaN/GaN QWs is attributed to exciton localization quantum dots, and InGaN/GaN TQWs are considered as active materials in order to increase performance in optoelectronic device. © 2003 American Institute of Physics.
Show PACS
78.67.De Quantum wells
73.21.Fg Quantum wells
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
85.60.Jb Light-emitting devices
68.65.Fg Quantum wells
78.55.Cr III-V semiconductors
78.60.Fi Electroluminescence
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
71.35.Lk Collective effects (Bose effects, phase space filling, and excitonic phase transitions)

Luminescence polarization of ordered GaInP/InP islands

U. Håkanson, V. Zwiller, M. K.-J. Johansson, T. Sass, and L. Samuelson

Appl. Phys. Lett. 82, 627 (2003); http://dx.doi.org/10.1063/1.1539544 (3 pages) | Cited 3 times

Online Publication Date: 22 January 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The luminescence polarization properties of GaInP islands have been investigated. The islands, which form during overgrowth of InP quantum dots, were studied using scanning tunneling luminescence (STL) and photoluminescence (PL). STL from these islands shows emission at an energy below the main emission peak of the bulk GaInP. The linear PL polarization anisotropy was measured at low temperature, for which the emission from the islands shows high polarization anisotropy. The intensity maximum for the emission occurs for light polarized parallel to the elongation of the islands. The observed linear PL polarization anisotropy indicates the presence of highly ordered domains of GaInP in the islands. © 2003 American Institute of Physics.
Show PACS
78.66.Fd III-V semiconductors
78.55.Cr III-V semiconductors
78.67.Hc Quantum dots

Response spectra from mid- to far-infrared, polarization behaviors, and effects of electron numbers in quantum-dot photodetectors

B. Aslan, H. C. Liu, M. Korkusinski, S.-J. Cheng, and P. Hawrylak

Appl. Phys. Lett. 82, 630 (2003); http://dx.doi.org/10.1063/1.1540728 (3 pages) | Cited 35 times

Online Publication Date: 22 January 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Photoresponse characteristics of InAs/GaAs self-assembled quantum-dot infrared photodetectors in a wide spectral region from the mid- to far-infrared are reported. Clear polarization behaviors with a dominant P-polarized response in the mid-infrared and a strong S-response in the far infrared are shown. These behaviors can be qualitatively understood in view of the quantum-dot shape of a large in-plane diameter and a small height in the growth direction. With a set of three samples, effects of the number of electrons per dot on the spectra are investigated.
Show PACS
85.60.Gz Photodetectors (including infrared and CCD detectors)
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
81.07.Ta Quantum dots
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
78.67.Hc Quantum dots
73.21.La Quantum dots
81.05.Ea III-V semiconductors
Return to All Sections
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close