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3 Feb 2003

Volume 82, Issue 5, pp. 665-834

Issue Cover Spotlight Figure

Appl. Phys. Lett. 82, 775 (2003); http://dx.doi.org/10.1063/1.1541091 (3 pages)

Sebastiaan van Dijken, Xin Jiang, and Stuart S. P. Parkin
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Wafer-fused AlGaAs/GaAs/GaN heterojunction bipolar transistor

Sarah Estrada, Huili Xing, Andreas Stonas, Andrew Huntington, Umesh Mishra, Steven DenBaars, Larry Coldren, and Evelyn Hu

Appl. Phys. Lett. 82, 820 (2003); http://dx.doi.org/10.1063/1.1541946 (3 pages) | Cited 7 times

Online Publication Date: 28 January 2003

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We describe an n-AlGaAs/p-GaAs/n-GaN heterojunction bipolar transistor, formed via wafer fusion of a p-GaAs base to an n-GaN collector. Wafer fusion was carried out at 750 °C for 1 h. Devices utilized a thick base (0.15 μm) and exhibited limited common-emitter current gain (0.2–0.5) at an output current density of ∼100 A/cm2. Devices were operated to VCE greater than 20 V, with a low VCE offset (1 V). Improvements in both device structure and wafer fusion conditions should provide further improvements in device performance. © 2003 American Institute of Physics.
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85.30.Pq Bipolar transistors
73.61.Ey III-V semiconductors

Fabrication and characterization of heteroepitaxial p-n junction diode composed of wide-gap oxide semiconductors p-ZnRh2O4/n-ZnO

Hiromichi Ohta, Hiroshi Mizoguchi, Masahiro Hirano, Satoru Narushima, Toshio Kamiya, and Hideo Hosono

Appl. Phys. Lett. 82, 823 (2003); http://dx.doi.org/10.1063/1.1544436 (3 pages) | Cited 48 times

Online Publication Date: 28 January 2003

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A reactive solid-phase epitaxy technique was applied to fabricate all-oxide transparent p-n heterojunctions composed of p-ZnRh2O4 and n-ZnO thin layers. Polycrystalline ZnRh2O4 was deposited on a ZnO epitaxial layer at room temperature. Thermal annealing of the bilayer sample at 950 °C in air converts the polycrystalline ZnRh2O4 layer to an epitaxial single-crystalline layer. The resultant p-n heterojunctions have an abrupt interface and exhibit a distinct rectifying I–V characteristic. The threshold voltage is ∼2 V, agreeing well with the band-gap energy of ZnRh2O4. It also exhibits photovoltage with UV-light illumination, which originates mainly from the n-ZnO layer. © 2003 American Institute of Physics.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.50.Pz Photoconduction and photovoltaic effects
81.15.Np Solid phase epitaxy; growth from solid phases
81.05.Dz II-VI semiconductors
61.72.Cc Kinetics of defect formation and annealing
71.20.Nr Semiconductor compounds

Formation of shallow source/drain extensions for metal–oxide–semiconductor field-effect-transistors by antimony implantation

H. Rücker, B. Heinemann, R. Barth, D. Bolze, V. Melnik, D. Krüger, and R. Kurps

Appl. Phys. Lett. 82, 826 (2003); http://dx.doi.org/10.1063/1.1542932 (3 pages) | Cited 5 times

Online Publication Date: 28 January 2003

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Shallow Sb and As junctions have been investigated with regard to their applicability in complementary metal–oxide–semiconductor (CMOS) technologies. Replacing As source/drain extensions by Sb with the same implanted depth facilitates the formation of about 20 nm shallower junctions and even lower sheet resistance. This is due to the absence of transient enhanced diffusion effects and less dose loss for Sb. Sb source/drain extensions with a final junction depth of 40 nm and a sheet resistance of 320 Ω/sq have been integrated in a standard CMOS process with 130 nm gate length. The same low leakage current level is demonstrated for Sb and As extensions. © 2003 American Institute of Physics.
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85.30.Tv Field effect devices
61.72.uf Ge and Si
85.40.Ry Impurity doping, diffusion and ion implantation technology
61.72.S- Impurities in crystals
61.80.Jh Ion radiation effects
61.82.Fk Semiconductors
85.30.De Semiconductor-device characterization, design, and modeling
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