APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

3 Feb 2003

Volume 82, Issue 5, pp. 665-834

Issue Cover Spotlight Figure

Appl. Phys. Lett. 82, 775 (2003); http://dx.doi.org/10.1063/1.1541091 (3 pages)

Sebastiaan van Dijken, Xin Jiang, and Stuart S. P. Parkin
Enlarge Image | Read More
Return to All Sections
back to top
RSS Feeds

Leakage currents in high-permittivity thin films

Herbert Schroeder, Sam Schmitz, and Paul Meuffels

Appl. Phys. Lett. 82, 781 (2003); http://dx.doi.org/10.1063/1.1541096 (3 pages) | Cited 21 times

Online Publication Date: 28 January 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Quite often leakage current data through high-permittivity thin films exhibit straight lines in the “Schottky” plot, i.e., log (current density j) versus sqrt (mean applied field), which suggests an electrode-limited current by field-enhanced thermionic emission. Unfortunately, the extracted permittivity at optical frequencies seldom is in agreement with experimental values and often is unacceptably small, i.e., <1. We suggest a model demonstrating that the leakage current in high-permittivity thin films is bulk-limited, but still is showing the characteristic dependence of thermionic emission. This is due to a combination of boundary conditions of the model, low-permittivity thin layers (“dead layer”) at the electrodes and current injection/recombination terms at the injecting/collecting electrodes, respectively. © 2003 American Institute of Physics.
Show PACS
77.55.-g Dielectric thin films
77.22.Ch Permittivity (dielectric function)
79.40.+z Thermionic emission
79.70.+q Field emission, ionization, evaporation, and desorption
73.61.Ng Insulators

Natural-superlattice-structured Bi4Ti3O12–SrBi4Ti4O15 ferroelectric thin films

Akira Shibuya, Minoru Noda, Masanori Okuyama, Hironori Fujisawa, and Masaru Shimizu

Appl. Phys. Lett. 82, 784 (2003); http://dx.doi.org/10.1063/1.1543248 (3 pages) | Cited 14 times

Online Publication Date: 28 January 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Natural superlattice structures of c-axis-oriented Bi4Ti3O12–SrBi4Ti4O15 epitaxial ferroelectric thin films have been grown by pulsed laser deposition on both MgO (001) and SrTiO3 (001) substrates. The epitaxial growth of natural-superlattice-structured Bi4Ti3O12–SrBi4Ti4O15 thin film was confirmed by x-ray diffraction (XRD) θ–2θ scan, pole figure plots, and reciprocal space mappings. The c-axis lattice parameter of the Bi4Ti3O12–SrBi4Ti4O15 thin film became the average of those for Bi4Ti3O12 and SrBi4Ti4O15. The Bi4Ti3O12–SrBi4Ti4O15 thin film on Pt substrate shows that twice remanent polarization (2Pr) and coercive field (2Ec) are 32 μC/cm2 and 190 kV/cm, respectively. © 2003 American Institute of Physics.
Show PACS
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
77.80.Dj Domain structure; hysteresis
68.55.-a Thin film structure and morphology
77.22.Ej Polarization and depolarization
81.15.Fg Pulsed laser ablation deposition

Single-domain properties of 0.67Pb(Mg1/3Nb2/3)O3–0.33PbTiO3 single crystals under electric field bias

Rui Zhang, Bei Jiang, and Wenwu Cao

Appl. Phys. Lett. 82, 787 (2003); http://dx.doi.org/10.1063/1.1541937 (3 pages) | Cited 57 times

Online Publication Date: 28 January 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We report a complete set of material properties of single-domain, relaxor-based 0.67Pb(Mg1/3Nb2/3)O3–0.33PbTiO3 [PMN–33%PT] single crystals. Because the single-domain state is unstable in natural conditions, a bias electric field of 0.2 MV/m was applied along the dipole direction of the rhombohedral phase during the measurements. It was found that the electromechanical coupling coefficient k33 and the piezoelectric constant d33 for single-domain PMN–33%PT are 69% and 190 pC/N, respectively. Both of them are much smaller than those of multidomain PMN–33%PT poled along [001] direction. However, the shear piezoelectric constant d15 of single-domain PMN–33%PT reaches 4100 pC/N, which is much higher than that of multidomain PMN–33%PT. © 2003 American Institute of Physics.
Show PACS
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.Dj Domain structure; hysteresis
77.65.Bn Piezoelectric and electrostrictive constants

Dielectric relaxation and strain behavior of 95.5% Pb(Zn1/3Nb2/3)O3–4.5% PbTiO3 single crystals at cryogenic temperatures

Zhi Yu, Chen Ang, E. Furman, and L. E. Cross

Appl. Phys. Lett. 82, 790 (2003); http://dx.doi.org/10.1063/1.1541936 (3 pages) | Cited 11 times

Online Publication Date: 28 January 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The dielectric behavior of 95.5% Pb(Zn1/3Nb2/3)O3–4.5% PbTiO3 single crystals oriented along 〈001〉 direction with and without dc electric field has been studied at cryogenic temperatures. A pronounced low-temperature dielectric relaxation process was observed below 200 K; the relaxation rate follows the Arrhenius law (τ0 = ∼ 1.0×10−15 s and U = 0.24 eV). An additional dielectric anomaly showed up around 250 K at 10 kHz under a dc electric field. These results indicate rather complicated polarization mechanisms at cryogenic temperatures which clearly need more detailed study. The strain levels at cryogenic temperatures suggest that this material is very promising for space applications, in which the performance at cryogenic temperatures is critical. © 2003 American Institute of Physics.
Show PACS
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.-e Ferroelectricity and antiferroelectricity
77.65.Ly Strain-induced piezoelectric fields
77.22.Gm Dielectric loss and relaxation
77.22.Ch Permittivity (dielectric function)
77.22.Ej Polarization and depolarization
Return to All Sections
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close