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3 Feb 2003

Volume 82, Issue 5, pp. 665-834

Issue Cover Spotlight Figure

Appl. Phys. Lett. 82, 775 (2003); http://dx.doi.org/10.1063/1.1541091 (3 pages)

Sebastiaan van Dijken, Xin Jiang, and Stuart S. P. Parkin
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Mode splitting in photoluminescence spectra of a quantum-dot-embedded microcavity

C. Y. Hu, H. Z. Zheng, J. D. Zhang, H. Zhang, F. H. Yang, and Y. P. Zeng

Appl. Phys. Lett. 82, 665 (2003); http://dx.doi.org/10.1063/1.1542929 (3 pages) | Cited 14 times

Online Publication Date: 28 January 2003

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A microcavity structure, containing self-assembled InGaAs quantum dots, is studied by angle-resolved photoluminescence (PL) spectroscopy. A doublet with the splitting energy of 0.5–1.5 nm appears when the detection angle is larger than 35°. This doublet is identified as mode splitting (not the Rabi splitting) by polarization measurements. We find that it is the considerable deviation of the cavity-mode frequency from the central frequency of the stop band that makes the TE and TM cavity modes split more discernibly. The inhomogeneous broadening of quantum dots gives the TE and TM cavity modes a chance to show up simultaneously in the PL spectra. © 2003 American Institute of Physics.
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78.67.Hc Quantum dots
78.55.Cr III-V semiconductors
81.07.Ta Quantum dots
42.82.Gw Other integrated-optical elements and systems

Polymer-based surface-plasmon-polariton stripe waveguides at telecommunication wavelengths

Thomas Nikolajsen, Kristjan Leosson, Ildar Salakhutdinov, and Sergey I. Bozhevolnyi

Appl. Phys. Lett. 82, 668 (2003); http://dx.doi.org/10.1063/1.1542944 (3 pages) | Cited 147 times

Online Publication Date: 28 January 2003

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Long-range surface-plasmon-polariton (LR–SPP) waveguiding along thin gold stripes embedded in polymer is investigated in the wavelength range of 1510–1620 nm. LR–SPP intensity distributions at the output are measured for different stripe widths and thicknesses. Coupling loss of ∼0.5 dB is achieved when exciting the fundamental LR–SPP mode along 10-nm-thick stripes of 6–10 μm width with a polarization maintaining fiber. LR–SPP propagation loss of 6–8 dB/cm is estimated (at 1550 nm) and attributed to scattering from inhomogeneities of the metal stripe and polymer cladding. © 2003 American Institute of Physics.
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42.79.Gn Optical waveguides and couplers
42.82.Et Waveguides, couplers, and arrays
42.82.Bq Design and performance testing of integrated-optical systems
42.70.Jk Polymers and organics
71.36.+c Polaritons (including photon-phonon and photon-magnon interactions)
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)

Lasing properties of GaAs/(Al,Ga)As quantum-cascade lasers as a function of injector doping density

M. Giehler, R. Hey, H. Kostial, S. Cronenberg, T. Ohtsuka, L. Schrottke, and H. T. Grahn

Appl. Phys. Lett. 82, 671 (2003); http://dx.doi.org/10.1063/1.1541099 (3 pages) | Cited 33 times

Online Publication Date: 28 January 2003

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The lasing properties of GaAs/Al0.33Ga0.67As quantum-cascade lasers are investigated as a function of injector doping concentration ns between 2×1011 and 1×1012 cm−2 per period. Lasing is observed for ns ≥ 3.5×1011 cm−2, with optimal lasing properties (minimum of the threshold current and maximum of the modified characteristic temperature) for nopt ≈ 6×1011 cm−2. With increasing ns up to nopt, the lasing energy of 115 meV exhibits first a blueshift to 135 meV, followed by a redshift to 120 meV for higher doping levels. This shift of the lasing energy as a function of ns is discussed in terms of changes in the field distribution, occupation of additional levels above the upper laser level, and electron–electron interactions. © 2003 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

Integrated diffractive terahertz elements

Nikolay S. Stoyanov, T. Feurer, David W. Ward, and Keith A. Nelson

Appl. Phys. Lett. 82, 674 (2003); http://dx.doi.org/10.1063/1.1540241 (3 pages) | Cited 21 times

Online Publication Date: 28 January 2003

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Femtosecond laser machining with high-energy pulses is used for fabrication of diffractive elements in LiNbO3 crystalline samples. This permits terahertz generation, frequency dispersion, detection, and analysis within a single integrated platform that is well suited for applications in terahertz spectroscopy or signal processing. © 2003 American Institute of Physics.
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42.82.Cr Fabrication techniques; lithography, pattern transfer
07.57.Hm Infrared, submillimeter wave, microwave, and radiowave sources
42.62.Cf Industrial applications
71.36.+c Polaritons (including photon-phonon and photon-magnon interactions)
42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
07.57.Pt Submillimeter wave, microwave and radiowave spectrometers; magnetic resonance spectrometers, auxiliary equipment, and techniques
42.82.Gw Other integrated-optical elements and systems

Fundamental optical absorption edge of undoped tetragonal zirconium dioxide

C. R. Aita, E. E. Hoppe, and R. S. Sorbello

Appl. Phys. Lett. 82, 677 (2003); http://dx.doi.org/10.1063/1.1543234 (3 pages) | Cited 17 times

Online Publication Date: 28 January 2003

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The high-frequency optical absorption edge of pure tetragonal ZrO2, isolated in a ZrO2–Al2O3 nanolaminate film structure, was determined using transmission spectrophotometry. The functional dependence of the absorption coefficient on photon energy shows two interband transitions: an initial indirect transition at 5.22 eV (i.e., the band gap) followed by a direct transition at 5.87 eV. The edge structure is associated with O 2p→Zr 4d electron states and discussed in terms of ab initio calculations reported in the literature. © 2003 American Institute of Physics.
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78.40.Ha Other nonmetallic inorganics
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
71.20.Ps Other inorganic compounds
78.66.Nk Insulators
78.67.Pt Multilayers; superlattices; photonic structures; metamaterials

High brightness laser source based on polarization coupling of two diode lasers with asymmetric feedback

Birgitte Thestrup, Mingjun Chi, Bjarne Sass, and Paul Michael Petersen

Appl. Phys. Lett. 82, 680 (2003); http://dx.doi.org/10.1063/1.1540218 (3 pages) | Cited 5 times

Online Publication Date: 28 January 2003

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In this letter, we show that polarization coupling and asymmetric diode-laser feedback can be used to combine two diode-laser beams with low spatial coherence into a single beam with high spatial coherence. The coupled laser source is based on two similar laser systems each consisting of a 1 μm×200 μm broad area laser diode applied with a specially designed feedback circuit. When operating at two times threshold, 50% of the freely running system output power is obtained in a single beam with an M2 beam quality factor of 1.6±0.1, whereas the M2 values of the two freely running diode lasers are 29±1 and 34±1, respectively. © 2003 American Institute of Physics.
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42.60.By Design of specific laser systems
42.55.Px Semiconductor lasers; laser diodes
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

White light-emitting diodes of GaN-based Sr2SiO4:Eu and the luminescent properties

Joung Kyu Park, Mi Ae Lim, Chang Hae Kim, Hee Dong Park, Joon Taik Park, and Se Young Choi

Appl. Phys. Lett. 82, 683 (2003); http://dx.doi.org/10.1063/1.1544055 (3 pages) | Cited 165 times

Online Publication Date: 28 January 2003

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We have synthesized a Eu2+-activated Sr2SiO4 yellow phosphor and investigated an attempt to develop white light-emitting diodes (LEDs) by combining it with a GaN blue LED chip. Two distinct emission bands from the GaN-based LED and the Sr2SiO4:Eu phosphor are clearly observed at 400 nm and at around 550 nm, respectively. These two emission bands combine to give a spectrum that appears white to the naked eye. Our results showed that GaN (400-nm chip)-based Sr2SiO4:Eu exhibits a better luminous efficiency than that of the industrially available product InGaN (460-nm chip)-based YAG:Ce. © 2003 American Institute of Physics.
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85.60.Jb Light-emitting devices
78.55.Hx Other solid inorganic materials
78.55.Cr III-V semiconductors

Temperature dependence of electron transfer in coupled quantum wells

Amlan Majumdar, K. K. Choi, J. L. Reno, L. P. Rokhinson, and D. C. Tsui

Appl. Phys. Lett. 82, 686 (2003); http://dx.doi.org/10.1063/1.1541094 (3 pages) | Cited 3 times

Online Publication Date: 28 January 2003

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We report on the temperature dependence of electron transfer between coupled quantum wells in a voltage tunable two-color quantum-well infrared photodetector (QWIP). The detection peak of this QWIP switches from 7.1 μm under positive bias to 8.6 μm under negative bias for temperatures T ⩽ 40 K. For T ≥ 40 K, the 7.1 μm peak is present under both bias polarities and increases significantly with T while the 8.6 μm peak decreases correspondingly. We determine the temperature dependence of electron densities in the two QWs from the detector absorption spectra that are deduced using corrugated QWIPs and find that electron transfer is efficient only when thermionic emission is not significant. © 2003 American Institute of Physics.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
85.30.De Semiconductor-device characterization, design, and modeling
73.20.At Surface states, band structure, electron density of states
73.21.Fg Quantum wells

Photon noise correlations in electrically coupled semiconductor lasers

P. M. Mayer, F. Rana, and R. J. Ram

Appl. Phys. Lett. 82, 689 (2003); http://dx.doi.org/10.1063/1.1539548 (3 pages) | Cited 3 times

Online Publication Date: 28 January 2003

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Measurements of the correlation between the photon noise of two semiconductor lasers sharing a bias circuit are presented. The photon noise of the electrically coupled lasers is found to be correlated by as much as 70%. The photon noise correlations are measured at low frequencies as a function of the bias current for lasers connected in series and in parallel, and for high and low impedance biases. The magnitude and sign of the noise correlations are consistent with theoretical expectations. © 2003 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
85.30.De Semiconductor-device characterization, design, and modeling
42.60.Mi Dynamical laser instabilities; noisy laser behavior

Single-step fabrication of silicon-cone arrays

G. Wysocki, R. Denk, K. Piglmayer, N. Arnold, and D. Bäuerle

Appl. Phys. Lett. 82, 692 (2003); http://dx.doi.org/10.1063/1.1538347 (2 pages) | Cited 28 times

Online Publication Date: 28 January 2003

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A regular lattice of SiO2 microspheres on a quartz support is used as a microlens system for laser-induced single-step fabrication of arrays of silicon cones on a (100) Si surface. The experiments were performed with single-pulse 248 nm KrF laser radiation. © 2003 American Institute of Physics.
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81.16.Mk Laser-assisted deposition
42.79.Bh Lenses, prisms and mirrors
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