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3 Feb 2003

Volume 82, Issue 5, pp. 665-834

Issue Cover Spotlight Figure

Appl. Phys. Lett. 82, 775 (2003); http://dx.doi.org/10.1063/1.1541091 (3 pages)

Sebastiaan van Dijken, Xin Jiang, and Stuart S. P. Parkin
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Nanoscale organic transistors that use source/drain electrodes supported by high resolution rubber stamps

Jana Zaumseil, Takao Someya, Zhenan Bao, Yueh-Lin Loo, Raymond Cirelli, and John A. Rogers

Appl. Phys. Lett. 82, 793 (2003); http://dx.doi.org/10.1063/1.1541941 (3 pages) | Cited 37 times

Online Publication Date: 28 January 2003

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Soft contact lamination and metal-coated elastomeric stamps provide the basis for a convenient and noninvasive approach to establishing high resolution electrical contacts to electroactive organic materials. The features of relief on the stamps define, with nanometer resolution, the geometry and separation of electrically independent electrodes that are formed by uniform, blanket evaporation of a thin metal film onto the stamp. Placing this coated stamp on a flat substrate leads to “wetting” and atomic scale contact that establishes efficient electrical connections. When the substrate supports an organic semiconductor, a gate dielectric and a gate, this soft lamination process yields high performance top contact transistors with source/drain electrodes on the stamp. We use this approach to investigate charge transport through pentacene in transistor structures with channel lengths that span more than three decades: from 250 μm to ∼150 nm. We also report some preliminary measurements on charge transport through organic monolayers using the same laminated transistor structures. © 2003 American Institute of Physics.
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85.35.-p Nanoelectronic devices
73.63.Rt Nanoscale contacts
81.07.Lk Nanocontacts
85.30.Pq Bipolar transistors

Aligned carbon nanotubes patterned photolithographically by silver

Shaoming Huang and Albert H. W. Mau

Appl. Phys. Lett. 82, 796 (2003); http://dx.doi.org/10.1063/1.1541939 (3 pages) | Cited 12 times

Online Publication Date: 28 January 2003

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Selective growth of aligned carbon nanotubes (CNTs) by pyrolysis of iron (II) phthalocyanine (FePc) on quartz substrate patterned photolithographically by metallic silver has been demonstrated. Micro/nanopattern of aligned CNTs can be achieved by using a photomask with features on a microscale. With convenient use of simple high-contract black and white films as a photomask, aligned nanotubes patterned with 20 μm resolution in large scale can be fabricated. This practical fabrication of aligned CNTs on patterned conducting substrate could be applied to various device applications of CNTs. © 2003 American Institute of Physics.
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81.16.Nd Micro- and nanolithography
85.40.Hp Lithography, masks and pattern transfer
81.16.Rf Micro- and nanoscale pattern formation
81.07.De Nanotubes
61.46.-w Structure of nanoscale materials
81.05.U- Carbon/carbon-based materials
82.30.Lp Decomposition reactions (pyrolysis, dissociation, and fragmentation)

Dot size dependence of vertical and lateral ordering in self-organized PbSe/Pb1−xEuxTe quantum-dot superlattices

G. Springholz, A. Raab, R. T. Lechner, and V. Holy

Appl. Phys. Lett. 82, 799 (2003); http://dx.doi.org/10.1063/1.1539279 (3 pages) | Cited 4 times

Online Publication Date: 28 January 2003

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Self-organized vertical and lateral ordering in PbSe/Pb1−xEuxTe quantum-dot superlattices is investigated as a function of PbSe dot layer thickness. An efficient lateral ordering and face centered cubic-like dot stacking occurs only for PbSe thicknesses between 4–6 monolayers. For smaller thicknesses, no correlations are formed, whereas for larger thicknesses the dots are vertically aligned along the growth direction. These transitions are explained by changes in interlayer dot interactions as a function of the dot size. © 2003 American Institute of Physics.
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68.65.Hb Quantum dots (patterned in quantum wells)
68.37.Ps Atomic force microscopy (AFM)

Classical and quantum transport in focused-ion-beam-deposited Pt nanointerconnects

J.-F. Lin, J. P. Bird, L. Rotkina, and P. A. Bennett

Appl. Phys. Lett. 82, 802 (2003); http://dx.doi.org/10.1063/1.1541940 (3 pages) | Cited 45 times

Online Publication Date: 28 January 2003

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We study the electrical properties of Pt nanointerconnects, formed on SiO2 substrates by focused-ion-beam deposition. Studies of their temperature-dependent resistivity reveal a small residual-resistivity ratio, and a Debye temperature that differs significantly from that of pure Pt, indicative of the disordered nature of the nanowires. Their magnetoresistance shows evidence for weak antilocalization at temperatures below 10 K, with a phase-breaking length of ∼100 nm, and a temperature dependence suggestive of quasi-one-dimensional interference. © 2003 American Institute of Physics.
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73.63.Rt Nanoscale contacts
73.40.Ns Metal-nonmetal contacts
81.07.Lk Nanocontacts
72.15.Gd Galvanomagnetic and other magnetotransport effects
72.15.Rn Localization effects (Anderson or weak localization)
73.20.Fz Weak or Anderson localization

Fabrication of nanometer-scale mechanical devices incorporating individual multiwalled carbon nanotubes as torsional springs

P. A. Williams, S. J. Papadakis, A. M. Patel, M. R. Falvo, S. Washburn, and R. Superfine

Appl. Phys. Lett. 82, 805 (2003); http://dx.doi.org/10.1063/1.1538346 (3 pages) | Cited 20 times

Online Publication Date: 28 January 2003

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We report on the fabrication of nanometer-scale mechanical devices incorporating multiwalled carbon nanotubes (MWNTs) as the torsional spring elements. We have employed electron beam lithography to pattern device elements directly onto individual MWNTs on a silicon dioxide substrate. The structures were suspended by etching the substrate and subsequent critical-point drying of the sample. We also briefly present characterization of the torsional properties of an individual MWNT. The techniques described are applicable to other nanometer-scale rod-like objects. © 2003 American Institute of Physics.
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85.35.Kt Nanotube devices
85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices
81.16.Nd Micro- and nanolithography

Chemomechanical surface patterning and functionalization of silicon surfaces using an atomic force microscope

Brent A. Wacaser, Michael J. Maughan, Ian A. Mowat, Travis L. Niederhauser, Matthew R. Linford, and Robert C. Davis

Appl. Phys. Lett. 82, 808 (2003); http://dx.doi.org/10.1063/1.1535267 (3 pages) | Cited 24 times

Online Publication Date: 28 January 2003

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Surface modification and patterning at the nanoscale is a frontier in science with significant possible applications in biomedical technology and nanoelectronics. Here we show that an atomic force microscope (AFM) can be employed to simultaneously pattern and functionalize hydrogen-terminated silicon (111) surfaces. The AFM probe was used to break Si–H and Si–Si bonds in the presence of reactive molecules, which covalently bonded to the scribed Si surface. Functionalized patches and patterned lines of molecules were produced. Linewidths down to 30 nm were made by varying the force at the tip. © 2003 American Institute of Physics.
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68.37.Ps Atomic force microscopy (AFM)
68.47.Fg Semiconductor surfaces
81.65.Ps Polishing, grinding, surface finishing
87.85.Qr Nanotechnologies-design
87.85.Rs Nanotechnologies-applications
85.35.-p Nanoelectronic devices
61.50.Lt Crystal binding; cohesive energy
87.80.-y Biophysical techniques (research methods)
81.05.Cy Elemental semiconductors

Ink-jet printing of nanoparticle catalyst for site-selective carbon nanotube growth

Hiroki Ago, Kazuhiro Murata, Motoo Yumura, Junko Yotani, and Sashiro Uemura

Appl. Phys. Lett. 82, 811 (2003); http://dx.doi.org/10.1063/1.1540726 (3 pages) | Cited 36 times

Online Publication Date: 28 January 2003

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We report on site-selective growth of multiwalled carbon nanotubes (MWNTs) from a Co nanoparticle catalyst patterned by an ink-jet printing (IJP) technique. The dispersion of the Co nanoparticles was employed as “catalyst ink” for the IJP, and the catalyst pattern was subjected to chemical vapor deposition of acetylene gas. The patterned array of MWNTs was obtained with a dot size around 5–30 μm and showed field emission of electrons corresponding to the printed pattern. The present method offers a simple and powerful means to pattern carbon nanotubes at desired positions with any patterns. © 2003 American Institute of Physics.
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81.16.Hc Catalytic methods
81.16.Nd Micro- and nanolithography
81.07.De Nanotubes
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
61.46.-w Structure of nanoscale materials
81.07.Bc Nanocrystalline materials
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
68.55.A- Nucleation and growth
79.70.+q Field emission, ionization, evaporation, and desorption
61.48.-c Structure of fullerenes and related hollow and planar molecular structures
82.33.Ya Chemistry of MOCVD and other vapor deposition methods

Scanning probe with an integrated diamond heater element for nanolithography

Joon Hyung Bae, Takahito Ono, and Masayoshi Esashi

Appl. Phys. Lett. 82, 814 (2003); http://dx.doi.org/10.1063/1.1541949 (3 pages) | Cited 13 times

Online Publication Date: 28 January 2003

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This letter reports the microfabrication, evaluation, and application of a boron-doped diamond microprobe with an integrated resistive heater element. The diamond heater with a pyramidal tip, which is formed at the end of two diamond beams, can be electrically heated by a flowing current. The high thermal conductivity of the diamond base supporting the heater element allows very quick thermal response of 0.45 μs. A hard-wearing sharp diamond tip formed by the silicon-lost mold technique shows excellent durability in contact operation with a sample. Diamond is well suited to use as a nanolithography tool for modification of a polymer, because polymer is hard to deposit on the tip during scanning due to the chemical inertness of the diamond surface. Demonstration of thermomechanical nanolithography with this heated probe exhibits line patterns with the feature size of 40 nm on a poly(methylmethacrylate) film. © 2003 American Institute of Physics.
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81.16.Nd Micro- and nanolithography
85.40.Hp Lithography, masks and pattern transfer
81.05.U- Carbon/carbon-based materials
07.79.-v Scanning probe microscopes and components
81.16.Ta Atom manipulation

Carbon nanotube networks by chemical vapor deposition

Alan M. Cassell, Geoff C. McCool, Hou Tee Ng, Jessica E. Koehne, Bin Chen, Jun Li, Jie Han, and M. Meyyappan

Appl. Phys. Lett. 82, 817 (2003); http://dx.doi.org/10.1063/1.1543252 (3 pages) | Cited 23 times

Online Publication Date: 28 January 2003

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We have demonstrated assembly of two- and three-dimensional networks of single-walled carbon nanotubes (SWNTs) using a microsphere assembly approach. The catalyst microcapsules are made from the solution based impregnation of uniform diameter, porous polystyrene microspheres. Chemical vapor deposition on the microcapsule arrays produces highly interconnected SWNT networks. Varying the microsphere diameter and catalyst solution composition allows varying the pattern spacing, catalyst yield, and network interconnectivity. © 2003 American Institute of Physics.
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81.07.De Nanotubes
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
61.46.-w Structure of nanoscale materials
81.16.Hc Catalytic methods
82.33.Ya Chemistry of MOCVD and other vapor deposition methods
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