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10 Feb 2003

Volume 82, Issue 6, pp. 841-996

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Appl. Phys. Lett. 82, 913 (2003); http://dx.doi.org/10.1063/1.1542686 (3 pages)

F. Gao and W. J. Weber
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Electro-optical properties of a polymer light-emitting diode with an injection-limited hole contact

T. van Woudenbergh, P. W. M. Blom, and J. N. Huiberts

Appl. Phys. Lett. 82, 985 (2003); http://dx.doi.org/10.1063/1.1543255 (3 pages) | Cited 25 times

Online Publication Date: 4 February 2003

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The electro-optical characteristics of a polymer light-emitting diode with a strongly reduced hole injection have been investigated. A silver contact on poly-dialkoxy-p-phenylene vinylene decreases the hole injection by five orders of magnitude, resulting in both a highly reduced light output and current. However, at high applied voltages, the current and light output strongly exceed the predictions based on the reduced hole injection, which is explained by an enhanced electric field near the hole-injection contact due to trapped electrons. © 2003 American Institute of Physics.
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85.60.Jb Light-emitting devices
73.40.Ns Metal-nonmetal contacts
78.66.Qn Polymers; organic compounds
73.61.Ph Polymers; organic compounds

Fabrication of in-plane gate transistors on hydrogenated diamond surfaces

J. A. Garrido, C. E. Nebel, R. Todt, G. Rösel, M.-C. Amann, M. Stutzmann, E. Snidero, and P. Bergonzo

Appl. Phys. Lett. 82, 988 (2003); http://dx.doi.org/10.1063/1.1545152 (3 pages) | Cited 23 times

Online Publication Date: 4 February 2003

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The highly conductive surface layer induced in diamond by hydrogen termination has been used to fabricate in-plane gate transistors. The conductive channel has been separated from the Ohmic gate contacts by insulating thin lines, obtained by using a combination of electron-beam lithography with surface oxidation. Oxidized lines of about 100 nm show excellent blocking properties, with leakage current of 0.3 pA/μm at 100 V and room temperature. In-plane transistor properties are reported for operation at 77 K and room temperature with good saturation characteristic and complete pinch-off. © 2003 American Institute of Physics.
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85.30.Tv Field effect devices
85.40.Hp Lithography, masks and pattern transfer
81.65.Mq Oxidation
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