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10 Feb 2003

Volume 82, Issue 6, pp. 841-996

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Appl. Phys. Lett. 82, 913 (2003); http://dx.doi.org/10.1063/1.1542686 (3 pages)

F. Gao and W. J. Weber
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HfO2-based insulating stacks on 4H–SiC(0001)

V. V. Afanas’ev, A. Stesmans, F. Chen, S. A. Campbell, and R. Smith

Appl. Phys. Lett. 82, 922 (2003); http://dx.doi.org/10.1063/1.1538310 (3 pages) | Cited 30 times

Online Publication Date: 4 February 2003

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Depositing HfO2 layers on ultrathin thermally grown SiO2 on 4H–SiC(0001) is demonstrated to yield an insulator with good properties. The stack combines the high quality of the ultrathin SiO2/SiC interface and associated high energy barriers for electron and hole injection from SiC with the high dielectric permittivity of HfO2 ( ≈ 20). The latter allows application of high electric fields to the SiC surface (up to 3 MV/cm), while keeping the strength of the field in the insulator at a moderate level. © 2003 American Institute of Physics.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
77.22.Ch Permittivity (dielectric function)

Nonlinear hole transport through a submicron-size channel

O. Makarovsky, A. Neumann, A. M. Martin, L. Turyanska, A. Patanè, L. Eaves, M. Henini, P. C. Main, S. Thoms, C. D. W. Wilkinson, D. K. Maude, and J. C. Portal

Appl. Phys. Lett. 82, 925 (2003); http://dx.doi.org/10.1063/1.1543643 (3 pages) | Cited 1 time

Online Publication Date: 4 February 2003

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We investigate hole transport through a submicron-size channel fabricated from a modulation-doped p-type GaAs/(AlGa)As single-quantum-well heterostructure. The intense electric field in the channel accelerates the holes beyond the inflection point of the lowest energy subband dispersion curve. This leads to current saturation and negative differential conduction effects in the current–voltage characteristics. © 2003 American Institute of Physics.
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73.63.Hs Quantum wells
73.21.Fg Quantum wells
73.50.Fq High-field and nonlinear effects
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