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10 Feb 2003

Volume 82, Issue 6, pp. 841-996

Issue Cover Spotlight Figure

Appl. Phys. Lett. 82, 913 (2003); http://dx.doi.org/10.1063/1.1542686 (3 pages)

F. Gao and W. J. Weber
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Dielectrophoretic assembly of oriented and switchable two-dimensional photonic crystals

Simon O. Lumsdon, Eric W. Kaler, Jacob P. Williams, and Orlin D. Velev

Appl. Phys. Lett. 82, 949 (2003); http://dx.doi.org/10.1063/1.1541114 (3 pages) | Cited 55 times

Online Publication Date: 4 February 2003

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We show that one- and two-dimensional crystals can be assembled from suspensions of latex or silica microspheres subjected to an alternating electric field in a gap between planar electrodes on a surface. These crystals, with areas above 25 mm2, are specifically oriented without the need for micropatterned templates. The order–disorder transitions take place within seconds and can be repeated tens of times by switching the field on and off. The particles accumulate on the surface between the electrodes due to the field gradient, align into rows along the field direction, and then crystallize into hexagonal arrays. The lattice spacings can be controlled via the electrostatic repulsion. © 2003 American Institute of Physics.
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42.70.Qs Photonic bandgap materials
68.35.Rh Phase transitions and critical phenomena
82.70.Dd Colloids
82.45.-h Electrochemistry and electrophoresis
42.82.Cr Fabrication techniques; lithography, pattern transfer

Complete suppression of filamentation and superior beam quality in quantum-dot lasers

Ch. Ribbat, R. L. Sellin, I. Kaiander, F. Hopfer, N. N. Ledentsov, D. Bimberg, A. R. Kovsh, V. M. Ustinov, A. E. Zhukov, and M. V. Maximov

Appl. Phys. Lett. 82, 952 (2003); http://dx.doi.org/10.1063/1.1533841 (3 pages) | Cited 45 times

Online Publication Date: 4 February 2003

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Comparative near-field and beam-quality (M2) measurements on narrow stripe quantum-dot (QD) and quantum-well (QW) lasers of identical structure, both emitting at 1100 nm, are presented. Intrinsic suppression of filamentation in the QD lasers is observed. QD lasers emitting at 1300 nm again show no filamentation. For a 6-μm-stripe, QW laser, M2 increases from 2.6 to 6.1 with output power increasing from 5 to 60 mW and with increasing stripe width (20 mW, 3→10 μm, M2 = 2.6→4.7). In the QD lasers, filamentation is suppressed up to 8 μm (1100 nm) and 9 μm (1300 nm) stripe width and no dependence on output power is observed. © 2003 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

Active planar optical waveguide made from luminescent silicon nanocrystals

J. Valenta, I. Pelant, K. Luterová, R. Tomasiunas, S. Cheylan, R. G. Elliman, J. Linnros, and B. Hönerlage

Appl. Phys. Lett. 82, 955 (2003); http://dx.doi.org/10.1063/1.1544433 (3 pages) | Cited 17 times

Online Publication Date: 4 February 2003

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We show experimentally that a layer of silicon nanocrystals, prepared by the Si-ion implantation (with the energy of 400 keV) into a synthetic silica slab and exhibiting room-temperature red photoluminescence, can serve simultaneously as a single-mode planar optical waveguide. The waveguide is shown to self-select guided transverse electric and transverse magnetic modes from the broad photoluminescence emission of the nanocrystals resulting in a substantially narrower emission spectrum for these modes. We further report on an investigation of optical gain in a sample implanted to a dose of 4×1017 cm−2. Despite the occurrence of strong waveguiding, results of the variable stripe length method turned out not to be able to give unambiguous evidence for optical gain. © 2003 American Institute of Physics.
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42.79.Gn Optical waveguides and couplers
78.55.Ap Elemental semiconductors
78.67.Bf Nanocrystals, nanoparticles, and nanoclusters
61.72.uf Ge and Si

Ultrafast optical Kerr effect of Ag–BaO composite thin films

Q. F. Zhang, W. M. Liu, Z. Q. Xue, J. L. Wu, S. F. Wang, D. L. Wang, and Q. H. Gong

Appl. Phys. Lett. 82, 958 (2003); http://dx.doi.org/10.1063/1.1541092 (3 pages) | Cited 30 times

Online Publication Date: 4 February 2003

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We report the ultrafast optical Kerr effect of Ag–BaO composite thin films by the femtosecond time-resolved pump-probe technique. The Ag–BaO thin films with Ag nanoparticles embedded into the BaO semiconductor matrix were prepared using a vacuum evaporation-deposition multimetallic layer method. The third-order nonlinear optical susceptibility of the thin films with the thickness of approximately 300 nm and the volume fraction of Ag nanoparticles in the thin films of about 25% was estimated to be 4.8×10−10 esu at the incident laser wavelength of 820 nm. The response time, i.e., the full width at half maximum of the Kerr signal, was as fast as 210 fs. The intrinsic third-order optical nonlinearity, or the optical Kerr effect of the thin films, can be attributed to the change of refractive index due to the intraband transition of electrons from the occupied state near the Fermi level to the unoccupied state in the Ag nanoparticles. Such nonlinearity is further enhanced by the local field effect that is present when the metallic nanoparticles are embedded into the semiconductor matrix. © 2003 American Institute of Physics.
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78.67.Bf Nanocrystals, nanoparticles, and nanoclusters
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.65.An Optical susceptibility, hyperpolarizability
81.07.Bc Nanocrystalline materials
78.47.-p Spectroscopy of solid state dynamics
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Sensors for sub-ppm NO2 gas detection based on carbon nanotube thin films

L. Valentini, I. Armentano, J. M. Kenny, C. Cantalini, L. Lozzi, and S. Santucci

Appl. Phys. Lett. 82, 961 (2003); http://dx.doi.org/10.1063/1.1545166 (3 pages) | Cited 149 times

Online Publication Date: 4 February 2003

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Carbon nanotubes (CNTs) deposited by plasma-enhanced chemical vapor deposition on Si3N4/Si substrates have been investigated as resistive gas sensors for NO2. Upon exposure to NO2, the electrical resistance of the CNTs was found to decrease. The maximum variation of resistance to NO2 was found at an operating temperature of around 165 °C. The sensor exhibited high sensitivity to NO2 gas at concentrations as low as 10 ppb, fast response time, and good selectivity. A thermal treatment method, based on repeated heating and cooling of the films, adjusted the resistance of the sensor film and optimized the sensor response to NO2. © 2003 American Institute of Physics.
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07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
85.35.Kt Nanotube devices
82.80.-d Chemical analysis and related physical methods of analysis

Excitonic emissions observed in ZnO single crystal nanorods

W. I. Park, Y. H. Jun, S. W. Jung, and Gyu-Chul Yi

Appl. Phys. Lett. 82, 964 (2003); http://dx.doi.org/10.1063/1.1544437 (3 pages) | Cited 175 times

Online Publication Date: 4 February 2003

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We report on the photoluminescent characteristics of ZnO single crystal nanorods grown by catalyst-free metalorganic vapor phase epitaxy. From photoluminescence (PL) spectra of the nanorods at 10 K, several PL peaks were observed at 3.376, 3.364, 3.360, and 3.359 eV. The PL peak at 3.376 eV is attributed to a free exciton peak while the other peaks are ascribed to neutral donor bound exciton peaks. The observation of the free exciton peak at 10 K indicates that ZnO nanorods prepared by the catalyst-free method are of high optical quality. © 2003 American Institute of Physics.
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78.67.Bf Nanocrystals, nanoparticles, and nanoclusters
78.55.Et II-VI semiconductors
71.35.Cc Intrinsic properties of excitons; optical absorption spectra
81.15.Kk Vapor phase epitaxy; growth from vapor phase
73.21.Hb Quantum wires
73.22.Lp Collective excitations
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.07.Bc Nanocrystalline materials

Highly-ordered GaAs/AlGaAs quantum-dot arrays on GaAs (001) substrates grown by molecular-beam epitaxy using nanochannel alumina masks

X. Mei, M. Blumin, M. Sun, D. Kim, Z. H. Wu, H. E. Ruda, and Q. X. Guo

Appl. Phys. Lett. 82, 967 (2003); http://dx.doi.org/10.1063/1.1544065 (3 pages) | Cited 22 times

Online Publication Date: 4 February 2003

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Highly-ordered GaAs/AlGaAs quantum-dot arrays (QDA) were grown by molecular-beam epitaxy on GaAs (001) using masks of anodic nanochannel alumina (NCA). The QDA replicated the hexagonal lattice pattern of the NCA masks with period spacing of 100 nm. The circular disk-like dots were defined by the nanohole channels of NCA masks with size adjustable between 45 and 85 nm. Both single- and double-well GaAs/AlGaAs QDA exhibited strong photoluminescence. The single-well QDA showed a narrow peak at 1.64 eV with full width at half maximum of only 16 meV, indicating good size uniformity and crystal quality for the QDA. NCA masked epitaxial growth is thus shown to be a promising general approach for fabricating various heterostructure QDA, including both strained and lattice-matched heterostructures. © 2003 American Institute of Physics.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
81.07.Ta Quantum dots
68.65.Hb Quantum dots (patterned in quantum wells)
81.05.Ea III-V semiconductors
78.67.Hc Quantum dots
78.55.Cr III-V semiconductors

Temperature dependence of superconductor-correlated metal–superconductor Josephson junctions

J. K. Freericks, B. K. Nikolić, and P. Miller

Appl. Phys. Lett. 82, 970 (2003); http://dx.doi.org/10.1063/1.1543236 (3 pages) | Cited 1 time

Online Publication Date: 4 February 2003

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Josephson junctions, with the barrier composed of a correlated metal (or insulator) tuned to lie close to the metal–insulator transition, show promise to provide the fastest operating speeds for digital electronics based on rapid single-flux quantum logic. We provide theoretical calculations that indicate that these devices have a small enough temperature derivative of Ic(T) within the junction operating range to allow them to be employed as elements in complex digital circuits. © 2003 American Institute of Physics.
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85.25.Hv Superconducting logic elements and memory devices; microelectronic circuits
85.25.Cp Josephson devices
74.45.+c Proximity effects; Andreev reflection; SN and SNS junctions
74.25.Sv Critical currents

Formation of nanofiber crossbars in electrospinning

E. Zussman, A. Theron, and A. L. Yarin

Appl. Phys. Lett. 82, 973 (2003); http://dx.doi.org/10.1063/1.1544060 (3 pages) | Cited 104 times

Online Publication Date: 4 February 2003

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In this letter, we report on a technique for the hierarchical assembly of nanofibers into crossbar nanostructures. An electrospinning process is used to create polymer-based nanofibers with diameters ranging from 10–180 nm and lengths of up to several centimeters. By controlling the electrostatic field and the polymer rheology, the nanofibers can be assembled into parallel periodic arrays. We also propose a theoretical model for the process. © 2003 American Institute of Physics.
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81.16.-c Methods of micro- and nanofabrication and processing
81.07.-b Nanoscale materials and structures: fabrication and characterization
81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials
47.65.-d Magnetohydrodynamics and electrohydrodynamics
83.80.Rs Polymer solutions
61.46.-w Structure of nanoscale materials
61.41.+e Polymers, elastomers, and plastics

Vertically aligned carbon nanofibers as sacrificial templates for nanofluidic structures

A. V. Melechko, T. E. McKnight, M. A. Guillorn, V. I. Merkulov, B. Ilic, M. J. Doktycz, D. H. Lowndes, and M. L. Simpson

Appl. Phys. Lett. 82, 976 (2003); http://dx.doi.org/10.1063/1.1544058 (3 pages) | Cited 13 times

Online Publication Date: 4 February 2003

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We report a method to fabricate nanoscale pipes (“nanopipes”) suitable for fluidic transport. Vertically aligned carbon nanofibers grown by plasma-enhanced chemical vapor deposition are used as sacrificial templates for nanopipes with internal diameters as small as 30 nm and lengths up to several micrometers that are oriented perpendicular to the substrate. This method provides a high level of control over the nanopipe location, number, length, and diameter, permitting them to be deterministically positioned on a substrate and arranged into arrays. © 2003 American Institute of Physics.
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81.05.U- Carbon/carbon-based materials
81.07.Bc Nanocrystalline materials
85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices
81.16.Dn Self-assembly
61.46.-w Structure of nanoscale materials
47.85.Np Fluidics
52.77.Dq Plasma-based ion implantation and deposition
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Formation mechanism of nanocatalysts for the growth of silicon nanowires on a hydrogen-terminated Si {111} surface template

S. Takeda, K. Ueda, N. Ozaki, and Y. Ohno

Appl. Phys. Lett. 82, 979 (2003); http://dx.doi.org/10.1063/1.1541934 (3 pages) | Cited 10 times

Online Publication Date: 4 February 2003

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We have observed the formation process of nanocatalysts that act for the growth of Si nanowires by means of UHV scanning tunneling microscopy. Gold–silicon nanocatalysts that we have examined were thought to form on a hydrogen (H)-terminated [111] silicon surface and to expel Si nanowires of extremely high aspect ratio via the vapor-liquid-solid mechanism. We have observed that a nanocatalyst, that is, a droplet of melted gold–silicon alloy of about 5 nm in diameter, is actually formed in a pit on a H-terminated surface in the narrow temperature range around 500 °C. We have concluded that, in this specific temperature range, nanocatalysts can be melted, remain mutually isolated, absorb silicon effectively, and expel Si nanowires. Based on the result, we have proposed a method of making a thin template, which facilitates to decide the nucleation sites and the sizes of nanocatalysts, resulting in the precise control of those of Si nanowires. © 2003 American Institute of Physics.
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81.16.Hc Catalytic methods
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
68.65.La Quantum wires (patterned in quantum wells)
81.07.Vb Quantum wires
68.47.Fg Semiconductor surfaces
81.05.Cy Elemental semiconductors
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
64.70.D- Solid-liquid transitions
82.60.Nh Thermodynamics of nucleation

Characterization of the nanostructures of a lithographically patterned dot array by x-ray pseudo-Kossel lines

D. R. Lee, Y. S. Chu, Y. Choi, J. C. Lang, G. Srajer, S. K. Sinha, V. Metlushko, and B. Ilic

Appl. Phys. Lett. 82, 982 (2003); http://dx.doi.org/10.1063/1.1543249 (3 pages) | Cited 8 times

Online Publication Date: 4 February 2003

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Grazing x-ray scattering from a nanofabricated periodic dot array exhibits an interesting diffraction pattern, resembling x-ray Kossel lines, due to the anisotropic x-ray resolution function. We demonstrate that the unique diffraction pattern can be used for precise characterization of the deep nanostructures, which cannot be obtained accurately by microscopy techniques. © 2003 American Institute of Physics.
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81.16.Nd Micro- and nanolithography
61.05.cf X-ray scattering (including small-angle scattering)
61.05.cp X-ray diffraction
61.46.-w Structure of nanoscale materials
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