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10 Feb 2003

Volume 82, Issue 6, pp. 841-996

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Appl. Phys. Lett. 82, 913 (2003); http://dx.doi.org/10.1063/1.1542686 (3 pages)

F. Gao and W. J. Weber
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Parameters that control pulsed electron beam ablation of materials and film deposition processes

Mikhail Strikovski and K. S. Harshavardhan

Appl. Phys. Lett. 82, 853 (2003); http://dx.doi.org/10.1063/1.1541945 (3 pages) | Cited 25 times

Online Publication Date: 4 February 2003

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Conditions for ablation of materials and film deposition were analyzed for a pulsed (∼100 ns) electron beam produced by a channel-spark source. For dielectric materials, we found the existence of an optimal source voltage related to the saturation of the pulse current. Our analysis indicates a larger ablated mass, smaller optimal deposition rates (∼0.25 Å/pulse), and a larger optimal target to substrate distance relative to pulsed laser deposition process. © 2003 American Institute of Physics.
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81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
61.80.Fe Electron and positron radiation effects
61.82.Ms Insulators
68.55.A- Nucleation and growth
77.55.-g Dielectric thin films
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