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17 Feb 2003

Volume 82, Issue 7, pp. 1003-1136

Issue Cover Spotlight Figure

Appl. Phys. Lett. 82, 1069 (2003); http://dx.doi.org/10.1063/1.1544428 (3 pages)

M. L. Povinelli, Steven G. Johnson, J. D. Joannopoulos, and J. B. Pendry
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Development of a niobium nanosuperconducting quantum interference device for the detection of small spin populations

S. K. H. Lam and D. L. Tilbrook

Appl. Phys. Lett. 82, 1078 (2003); http://dx.doi.org/10.1063/1.1554770 (3 pages) | Cited 49 times

Online Publication Date: 10 February 2003

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Electron-beam lithography and reactive ion etching have been used to fabricate thin-film Au/Nb bridges with widths ∼ 50 nm. The Au layer was used as both a mask for etching the Nb superconducting bridge and as a resistive shunt in the completed devices. Using these junctions, a dc superconducting quantum interference device (SQUID) design with a hole size of 200 nm×200 nm (nano-SQUID) has also been fabricated and characterized. A flux noise of approximately 7×10−6 Φ0/Hz1/2 at 4.2 K has been achieved, from which a calculated spin sensitivity of 250 spin/Hz1/2 is predicted. © 2003 American Institute of Physics.
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85.25.Dq Superconducting quantum interference devices (SQUIDs)
74.70.Ad Metals; alloys and binary compounds (including A15, MgB2, etc.)

Imaging of vortex configurations in thin films by scanning-tunneling microscopy

G. J. C. van Baarle, A. M. Troianovski, T. Nishizaki, P. H. Kes, and J. Aarts

Appl. Phys. Lett. 82, 1081 (2003); http://dx.doi.org/10.1063/1.1554481 (3 pages) | Cited 8 times

Online Publication Date: 10 February 2003

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We report on imaging of vortices in thin superconducting films using surface passivation with an ultrathin Au layer. This allows investigation of surfaces that oxidize easily, as well as the mounting of samples in air. We studied vortex configurations in a material with weak vortex pinning (a-Mo2.7Ge) and a strongly pinning material (NbN) at 4.2 K in magnetic fields up to 1.4 T. In a-Mo2.7Ge, we observe a well-ordered hexagonal lattice, with local defects beginning to appear around 1.0 T. In NbN, the vortex lattice is fully disordered. © 2003 American Institute of Physics.
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74.78.-w Superconducting films and low-dimensional structures
74.25.Uv Vortex phases (includes vortex lattices, vortex liquids, and vortex glasses)
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
74.70.Ad Metals; alloys and binary compounds (including A15, MgB2, etc.)
81.65.Rv Passivation
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Characterization of chemical-vapor-deposited low-k thin films using x-ray porosimetry

Hae-Jeong Lee, Eric K. Lin, Barry J. Bauer, Wen-li Wu, Byung Keun Hwang, and William D. Gray

Appl. Phys. Lett. 82, 1084 (2003); http://dx.doi.org/10.1063/1.1553996 (3 pages) | Cited 15 times

Online Publication Date: 10 February 2003

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Trimethylsilane-based carbon-doped silica films prepared with varying chemical-vapor-deposition process conditions were characterized using x-ray reflectivity and porosimetry to measure the film thickness, average film density, density depth profile, wall density, and porosity. Samples deposited under single or dual frequency conditions with either N2O or O2 as an oxidant were compared. The structural parameters were correlated with the chemical bond structure measured by Fourier transform infrared spectroscopy. The density profiles of the porous films were uniform with a slight densification at the film surface. The distribution of pores was also uniform through the film. Films prepared under a single frequency and/or N2O atmosphere had the lowest film density, wall density, and dielectric constant. The porosities of the films were similar and the pore sizes were less than 10 Å. © 2003 American Institute of Physics.
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68.55.-a Thin film structure and morphology
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
77.55.-g Dielectric thin films
85.40.Ls Metallization, contacts, interconnects; device isolation
61.05.cm X-ray reflectometry (surfaces, interfaces, films)
78.30.Hv Other nonmetallic inorganics
78.66.Nk Insulators
68.47.Gh Oxide surfaces
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
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Optical nonlinearity resulting from a light-induced structural transition in gallium nanoparticles

K. F. MacDonald, V. A. Fedotov, and N. I. Zheludev

Appl. Phys. Lett. 82, 1087 (2003); http://dx.doi.org/10.1063/1.1543644 (3 pages) | Cited 14 times

Online Publication Date: 10 February 2003

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We report that a light-induced structural transformation between different phases of gallium provides a mechanism for a strong optical nonlinearity. The nonlinearity has been studied in transient pump-probe experiments on nanoparticle films deposited on the ends of optical fibers. The magnitude and relaxation time of the response show hysteretic dependencies on temperature in the range from 100 to 300 K, are enhanced near the phase transition points and disappear at temperatures above 220 K. © 2003 American Institute of Physics.
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78.67.Bf Nanocrystals, nanoparticles, and nanoclusters
64.70.Nd Structural transitions in nanoscale materials
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
78.47.-p Spectroscopy of solid state dynamics
61.82.Rx Nanocrystalline materials
81.07.Bc Nanocrystalline materials
81.16.Dn Self-assembly
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

PtRu–WO3 nanostructured alloy electrode for use in thin-film fuel cells

Kyung-Won Park, Kwang-Soon Ahn, Jong-Ho Choi, Yoon-Chae Nah, and Yung-Eun Sung

Appl. Phys. Lett. 82, 1090 (2003); http://dx.doi.org/10.1063/1.1545153 (3 pages) | Cited 12 times

Online Publication Date: 10 February 2003

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A PtRu–WO3 nanostructured alloy electrode consisting of alloy nanophases and amorphous tungsten oxide for use in thin-film fuel cells was designed and fabricated using a multigun sputtering system with Pt and Ru metal and a tungsten oxide target. Alloy formation and the presence of nanophases in an amorphous tungsten oxide phase was confirmed by x-ray diffraction and transmission electron microscopy, respectively. The nanostructured alloy electrode, PtRu–WO3 showed the best performance in methanol electro-oxidation because of the presence of the alloy nanophases when compared to a Pt and PtRu thin-film electrode. © 2003 American Institute of Physics.
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82.47.Ed Solid-oxide fuel cells (SOFC)
82.45.Fk Electrodes

Lateral control of self-assembled island nucleation by focused-ion-beam micropatterning

M. Kammler, R. Hull, M. C. Reuter, and F. M. Ross

Appl. Phys. Lett. 82, 1093 (2003); http://dx.doi.org/10.1063/1.1542680 (3 pages) | Cited 42 times

Online Publication Date: 10 February 2003

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We demonstrate that the nucleation sites of nanoscale, self-assembled Ge islands on Si(001) can be controlled by patterning the Si surface in situ with a focused ion beam. At low doses of 6000 Ga+ ions per <100 nm spot, the selective growth is achieved without modifying the initial surface topography. At larger doses, topographic effects produced by sputtering and redeposition control the selective nucleation sites. Islands grown on irradiated spots are smaller with higher aspect ratio than islands grown on clean Si(001), suggesting a strong surfactant effect of Ga. © 2003 American Institute of Physics.
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68.55.A- Nucleation and growth
81.16.Dn Self-assembly
68.35.B- Structure of clean surfaces (and surface reconstruction)
68.55.-a Thin film structure and morphology
61.82.Fk Semiconductors
61.80.Jh Ion radiation effects
68.47.Fg Semiconductor surfaces
81.05.Cy Elemental semiconductors
81.65.Cf Surface cleaning, etching, patterning
81.15.Cd Deposition by sputtering
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces

ZnO nanowires formed on tungsten substrates and their electron field emission properties

Lifeng Dong, Jun Jiao, David W. Tuggle, Jeremy M. Petty, Stephen A. Elliff, and Michael Coulter

Appl. Phys. Lett. 82, 1096 (2003); http://dx.doi.org/10.1063/1.1554477 (3 pages) | Cited 95 times

Online Publication Date: 10 February 2003

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Using a vapor transport method, ZnO nanowires were selectively synthesized both on tungsten tips as electron field emitters and on tungsten plates with designed patterns. Control of the growth locations of the nanowires was accomplished by selectively positioning a thin film of Au catalyst. The angular intensity and fluctuation of the field emission current from the ZnO nanowires synthesized on tungsten tips have been demonstrated to be similar to those of carbon nanotubes. A self-destruction limit of ∼ 0.1 mA/sr for angular intensity was observed, and the power spectra showed a 1/f3/2 characteristic from 1 Hz to 6 kHz. © 2003 American Institute of Physics.
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79.70.+q Field emission, ionization, evaporation, and desorption
81.16.Rf Micro- and nanoscale pattern formation
68.65.La Quantum wires (patterned in quantum wells)
85.45.Db Field emitters and arrays, cold electron emitters
81.07.Vb Quantum wires

Effect of the dot size distribution on quantum dot infrared photoresponse and temperature-dependent dark current

Yong Hoon Kang, Jinsung Park, Uk Hyun Lee, and Songcheol Hong

Appl. Phys. Lett. 82, 1099 (2003); http://dx.doi.org/10.1063/1.1555711 (3 pages) | Cited 10 times

Online Publication Date: 10 February 2003

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The fit allows us to find the standard deviation and the average activation energy for electrons in the dot distribution, which is consistent with the peak energy of the photocurrent spectrum measured in the middle infrared. On the contrary, the activation energy found from a conventional Arrhenius fit is well below the photocurrent peak energy. © 2003 American Institute of Physics.
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07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
85.60.Gz Photodetectors (including infrared and CCD detectors)
73.63.Kv Quantum dots
72.40.+w Photoconduction and photovoltaic effects
72.80.Ey III-V and II-VI semiconductors
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)

Magnetically modulated optical nanoprobes

Jeffrey N. Anker and Raoul Kopelman

Appl. Phys. Lett. 82, 1102 (2003); http://dx.doi.org/10.1063/1.1544435 (3 pages) | Cited 35 times

Online Publication Date: 10 February 2003

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We have developed magnetically modulated optical nanoprobes (MagMOONs) to magnetically modulate the signal from fluorescent probes and thus separate it from autofluorescence, electronic offsets, and other background signals. These micro- and nanosized particles emit fluorescence signals, indicating chemical concentrations, and blink in response to rotating magnetic fields. Demodulating the signal dramatically enhances the probe’s signal to background ratio. The probes and methods promise to improve immunoassays, intracellular chemical sensing, and fundamental biochemical research. © 2003 American Institute of Physics.
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87.80.-y Biophysical techniques (research methods)
87.17.-d Cell processes
85.70.Sq Magnetooptical devices
87.50.C- Static and low-frequency electric and magnetic fields effects
87.15.N- Properties of solutions of macromolecules
42.79.Hp Optical processors, correlators, and modulators

Hydrogen storage capacity of commercially available carbon materials at room temperature

H. Kajiura, S. Tsutsui, K. Kadono, M. Kakuta, M. Ata, and Y. Murakami

Appl. Phys. Lett. 82, 1105 (2003); http://dx.doi.org/10.1063/1.1555262 (3 pages) | Cited 45 times

Online Publication Date: 10 February 2003

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The hydrogen storage capacity of five types of commercially available carbon materials with different nanostructures was measured at up to 8 MPa at room temperature using an apparatus based on a volumetric method with an error of less than 0.04 wt %/gr. The highest storage capacity of 0.43 wt % was obtained for purified HiPco™ single-walled carbon nanotubes (SWNTs). In the SWNTs, the hydrogen density in pores with a diameter of less than 1 nm was estimated to be a 0.022 g/ml, which corresponds to 31% of the density of liquid hydrogen. Issues in the development of carbon-based hydrogen storage media are discussed. © 2003 American Institute of Physics.
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84.60.-h Direct energy conversion and storage
82.60.Qr Thermodynamics of nanoparticles
85.35.Kt Nanotube devices
82.45.Yz Nanostructured materials in electrochemistry

Formation of crystalline Si nanodots in SiO2 films by electron irradiation

Xi-wen Du, Masaki Takeguchi, Miyoko Tanaka, and Kazuo Furuya

Appl. Phys. Lett. 82, 1108 (2003); http://dx.doi.org/10.1063/1.1555691 (3 pages) | Cited 27 times

Online Publication Date: 10 February 2003

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Amorphous SiO2 transforms into crystalline Si by 200 kV electron irradiation at ambient temperature. The transformation of amorphous SiO2 to crystalline Si takes place in two steps; the first step involves transformation of amorphous SiO2 into amorphous Si, while the second step is the crystallization of amorphous Si. Valence electron ionization is determined as the key factor for the transformation from SiO2 to amorphous Si; beam heating and knock-on displacement are responsible for the transformation from amorphous Si to crystalline Si. The energy threshold for the crystallization of amorphous Si is determined to be 150.2 kV. © 2003 American Institute of Physics.
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61.82.Rx Nanocrystalline materials
61.46.-w Structure of nanoscale materials
61.43.Dq Amorphous semiconductors, metals, and alloys
81.07.Bc Nanocrystalline materials
68.65.Hb Quantum dots (patterned in quantum wells)
61.80.Fe Electron and positron radiation effects
61.82.Fk Semiconductors

Nanometer-scale scanning sensors fabricated using stencil lithography

A. R. Champagne, A. J. Couture, F. Kuemmeth, and D. C. Ralph

Appl. Phys. Lett. 82, 1111 (2003); http://dx.doi.org/10.1063/1.1554483 (3 pages) | Cited 24 times

Online Publication Date: 10 February 2003

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We describe a flexible technique for fabricating 10-nm-scale devices for use as high-resolution scanning sensors and functional probes. Metallic structures are deposited directly onto atomic force microscope tips by evaporation through nanoscale holes fabricated in a stencil mask. We report on the lithographic capabilities of the technique and discuss progress in one initial application, to make high-spatial-resolution magnetic force sensors. © 2003 American Institute of Physics.
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81.16.Nd Micro- and nanolithography
85.40.Hp Lithography, masks and pattern transfer
07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
07.79.Pk Magnetic force microscopes

In situ observation of particle-induced desorption from a self-assembled monolayer by laser-ionization mass spectrometry

E. Vandeweert, J. Bastiaansen, F. Vervaecke, P. Lievens, R. E. Silverans, P. Cyganik, Z. Postawa, H. T. Rong, and M. Buck

Appl. Phys. Lett. 82, 1114 (2003); http://dx.doi.org/10.1063/1.1555261 (3 pages) | Cited 3 times

Online Publication Date: 10 February 2003

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We studied particle-stimulated desorption processes of highly ordered, self-assembled monolayers of biphenyl-based thiols covalently bound to Au/mica substrates with laser postionization in combination with mass spectrometry. Direct evidence was obtained that large molecular fragments are removed from these monolayers during impact of electrons with a kinetic energy of 1 keV. The damage that accumulates in the self-assembled monolayer with increasing electron dose was measured using ion-beam, sputter-initiated laser probing. Our results show that electron-induced desorption competes with the gradual erosion of the monolayer by the formation of a carbonaceous residual layer on the substrate. © 2003 American Institute of Physics.
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68.43.Rs Electron stimulated desorption
79.20.La Photon- and electron-stimulated desorption
82.80.Ms Mass spectrometry (including SIMS, multiphoton ionization and resonance ionization mass spectrometry, MALDI)
81.16.Dn Self-assembly
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Transparent ZnO thin-film transistor fabricated by rf magnetron sputtering

P. F. Carcia, R. S. McLean, M. H. Reilly, and G. Nunes

Appl. Phys. Lett. 82, 1117 (2003); http://dx.doi.org/10.1063/1.1553997 (3 pages) | Cited 345 times

Online Publication Date: 10 February 2003

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We fabricated ZnO thin-film transistors by rf magnetron sputtering on Si substrates held near room temperature. The best devices had field-effect mobility of more than 2 cm2/V s and an on/off ratio>106. These ZnO films had resistivity ∼ 105 ohm cm, with high optical transparency (>80% for wavelength >400 nm), and compressive stress <0.5 GPa. The combination of transparency in the visible, excellent transistor characteristics, and low-temperature processing makes ZnO thin-film transistors attractive for flexible electronics on temperature sensitive substrates. © 2003 American Institute of Physics.
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85.30.Tv Field effect devices
81.15.Cd Deposition by sputtering
85.30.De Semiconductor-device characterization, design, and modeling
72.20.Ee Mobility edges; hopping transport
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

An all-optical picosecond switch in polydiacetylene

Hossin Abdeldayem, Donald O. Frazier, and Mark S. Paley

Appl. Phys. Lett. 82, 1120 (2003); http://dx.doi.org/10.1063/1.1543251 (3 pages) | Cited 12 times

Online Publication Date: 10 February 2003

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A polydiacetylene derivative of 2-methyl-4-nitroaniline (PDAMNA) showed a picosecond switching property. This phenomenon was demonstrated by waveguiding a cw He–Ne laser collinearly with a mode-locked picosecond Nd:YAG laser at 532 nm through a hollow fiber coated on the inside with a thin film of PDAMNA. The Z-scan investigations of PDAMNA thin films revealed that the PDAMNA system is a three-level system and the switching is caused by excited state absorption of the He–Ne beam.
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42.65.Pc Optical bistability, multistability, and switching, including local field effects
42.81.Wg Other fiber-optical devices

Solution-processed niobium diselenide as conductor and anode for polymer light-emitting diodes

K. J. Reynolds, G. L. Frey, and R. H. Friend

Appl. Phys. Lett. 82, 1123 (2003); http://dx.doi.org/10.1063/1.1553994 (3 pages) | Cited 3 times

Online Publication Date: 10 February 2003

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The use of layered transition metal dichalcogenides (LTMDCs) processed from aqueous solution as hole injectors in polymer light-emitting diodes (PLEDs) was recently reported. In this letter, we extend the use of LTMDCs further by using the metallic compounds as semitransparent anodes in PLEDs (in place of indium tin oxide). The LTMDC films have a sheet resistance of ∼1000 Ω/□, and a transmittance of greater than 60% over the range of 400–800 nm. Typical diodes with niobium diselenide anodes show high luminance and power efficiencies of over 1 lm/W, demonstrating the potential to integrate solution-processed LTMDC conducting films in other electronic applications. © 2003 American Institute of Physics.
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72.15.Nj Collective modes (e.g., in one-dimensional conductors)
85.60.Jb Light-emitting devices
42.70.Jk Polymers and organics
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Electrostatic response of hydrophobic surface measured by atomic force microscopy

O. Teschke and E. F. de Souza

Appl. Phys. Lett. 82, 1126 (2003); http://dx.doi.org/10.1063/1.1542945 (3 pages) | Cited 10 times

Online Publication Date: 10 February 2003

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The arrangement of water molecules at aqueous interfaces is an important question in material and biological sciences. We have measured the force acting on neutral tips as a function of the distance to hydrophobic silicon surfaces and cetyltrimethylammonium bromide monolayers covering mica surfaces in aqueous solutions. The unusually large magnitude of this force is attributed to an electrostatic response of the aqueous fluid structure (hydration layer) which is generated by the reorientation of water molecular dipoles. The exchange of a volume of this region with a dielectric permittivity (εint) by the tip with a dielectric permittivity (εtip) is responsible for the tip attraction when it is immersed in the polarization (hydration) layer. Variable permittivity profiles starting at ε ≈ 11 at the interface and increasing to ε = 80 about 10 nm from hydrophobic silicon surfaces and about 50 nm from cetyltrimethylammonium bromide monolayer covering mica surfaces were measured. © 2003 American Institute of Physics.
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68.35.Md Surface thermodynamics, surface energies
68.37.Ps Atomic force microscopy (AFM)
68.03.Cd Surface tension and related phenomena
68.47.Fg Semiconductor surfaces
68.47.Gh Oxide surfaces
77.22.Ch Permittivity (dielectric function)
82.70.Uv Surfactants, micellar solutions, vesicles, lamellae, amphiphilic systems, (hydrophilic and hydrophobic interactions)

Demonstration of bottom mirrors for resonant-cavity-enhanced GaAs homojunction far-infrared detectors

Y. H. Zhang, H. T. Luo, and W. Z. Shen

Appl. Phys. Lett. 82, 1129 (2003); http://dx.doi.org/10.1063/1.1553992 (3 pages) | Cited 4 times

Online Publication Date: 10 February 2003

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A proposal for the bottom mirrors of resonant-cavity-enhanced GaAs homojunction far-infrared (FIR) detectors has been suggested and optimized based on undoped/doped GaAs layers with the Fresnel matrix method. With this kind of bottom mirror, the calculated absorption probability in the detector cavity increases two times over that in the normal detector structure. Comparing optical measurements have been carried out on n-GaAs homojunction FIR detector structures with and without the bottom mirrors, as well as a single optimized bottom mirror structure (without the detector cavity structure). The experimental FIR reflection and transmission results demonstrate well the theoretical design. © 2003 American Institute of Physics.
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07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
42.79.Bh Lenses, prisms and mirrors
85.60.Gz Photodetectors (including infrared and CCD detectors)

Photomodulated thermoreflectance investigation at elevated temperatures: plasma versus thermal effect

Constantinos Christofides, Andreas Othonos, and Efi Loizidou

Appl. Phys. Lett. 82, 1132 (2003); http://dx.doi.org/10.1063/1.1541935 (3 pages)

Online Publication Date: 10 February 2003

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Photomodulated thermoreflectance measurements were performed at elevated temperatures (294 to 623 K), on crystalline silicon lightly doped with boron. The temperature dependence is qualitatively and quantitatively discussed. The “competition” between thermal and plasma contribution, as a function of temperature, is one of the main subjects of this letter. © 2003 American Institute of Physics.
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78.20.N- Thermo-optic effects
78.20.nb Photothermal effects
81.05.Cy Elemental semiconductors
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
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FREE

Publisher’s Note: “Tuning the dynamic behavior of parametric resonance in a micromechanical oscillator” [Appl. Phys. Lett. 82, 130 (2003)]

Wenhua Zhang, Rajashree Baskaran, and Kimberly Turner

Appl. Phys. Lett. 82, 1135 (2003); http://dx.doi.org/10.1063/1.1556311 (1 page)

Online Publication Date: 10 February 2003

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Abstract Unavailable
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99.10.Fg Publisher's note
07.10.Cm Micromechanical devices and systems
85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices
05.45.Xt Synchronization; coupled oscillators
FREE

Erratum: “Infrared dielectric response function of strained In1−xGaxAs/InP epilayers” [Appl. Phys. Lett. 81, 2175 (2002)]

G. Yu, N. L. Rowell, D. J. Lockwood, and P. J. Poole

Appl. Phys. Lett. 82, 1136 (2003); http://dx.doi.org/10.1063/1.1555281 (1 page) | Cited 1 time

Online Publication Date: 10 February 2003

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© 2003 American Institute of Physics.
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99.10.Cd Errata
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
71.45.Gm Exchange, correlation, dielectric and magnetic response functions, plasmons
63.20.D- Phonon states and bands, normal modes, and phonon dispersion
78.66.Fd III-V semiconductors
81.05.Ea III-V semiconductors
78.30.Fs III-V and II-VI semiconductors
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