APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

17 Feb 2003

Volume 82, Issue 7, pp. 1003-1136

Issue Cover Spotlight Figure

Appl. Phys. Lett. 82, 1069 (2003); http://dx.doi.org/10.1063/1.1544428 (3 pages)

M. L. Povinelli, Steven G. Johnson, J. D. Joannopoulos, and J. B. Pendry
Enlarge Image | Read More
Return to All Sections
back to top
RSS Feeds

Characterization of chemical-vapor-deposited low-k thin films using x-ray porosimetry

Hae-Jeong Lee, Eric K. Lin, Barry J. Bauer, Wen-li Wu, Byung Keun Hwang, and William D. Gray

Appl. Phys. Lett. 82, 1084 (2003); http://dx.doi.org/10.1063/1.1553996 (3 pages) | Cited 15 times

Online Publication Date: 10 February 2003

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Trimethylsilane-based carbon-doped silica films prepared with varying chemical-vapor-deposition process conditions were characterized using x-ray reflectivity and porosimetry to measure the film thickness, average film density, density depth profile, wall density, and porosity. Samples deposited under single or dual frequency conditions with either N2O or O2 as an oxidant were compared. The structural parameters were correlated with the chemical bond structure measured by Fourier transform infrared spectroscopy. The density profiles of the porous films were uniform with a slight densification at the film surface. The distribution of pores was also uniform through the film. Films prepared under a single frequency and/or N2O atmosphere had the lowest film density, wall density, and dielectric constant. The porosities of the films were similar and the pore sizes were less than 10 Å. © 2003 American Institute of Physics.
Show PACS
68.55.-a Thin film structure and morphology
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
77.55.-g Dielectric thin films
85.40.Ls Metallization, contacts, interconnects; device isolation
61.05.cm X-ray reflectometry (surfaces, interfaces, films)
78.30.Hv Other nonmetallic inorganics
78.66.Nk Insulators
68.47.Gh Oxide surfaces
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
Return to All Sections
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close